Behavior of Electron Traps Induced by Phosphidization and Nitridation of GaAs Surfaces

1998 ◽  
Vol 510 ◽  
Author(s):  
Satoshi Nozu ◽  
Koichiro Matsuda ◽  
Takashi Sugino
Keyword(s):  
Energy Level ◽  
Cross Section ◽  
Capture Cross Section ◽  
Conduction Band Edge ◽  
Capture Cross ◽  
Electron Traps ◽  
Plasma Treatments ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

AbstractGaAs is treated with remote PH3 and N2 plasmas. Electron traps induced by plasma treatments are investigated by isothermal capacitance transient spectroscopy measurements. The EL2 trap is detected in the as-grown GaAs. The TP1 trap(Ec-0.26eV) is generated in GaAs phosphidized for 10min, while the TN1 trap(Ec-0.66eV) is induced in GaAs nitrided for 30min. It is found that the TP1 trap is changed to the another trap with an energy level as shallow as 0.16eV below the conduction band edge and a capture cross section as small as 1.8×10−21cm2 by treating with N2 plasma subsequently after PH3 plasma treatment.

Influence of Ar-milling on cross-section structure of gallium arsenide

1988 ◽  
Vol 10 (2) ◽  
pp. 221-227 ◽  
Author(s):  
G. Vitali ◽  
M. Rossi ◽  
M. Kalitzova ◽  
N. Pashov ◽  
P. Werner ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Cross Section ◽  
Section Structure

Photoionization Cross Section for Manganese Acceptors in Gallium Arsenide

1973 ◽  
Vol 8 (12) ◽  
pp. 5664-5670 ◽  
Author(s):  
Winfield J. Brown ◽  
Dustin A. Woodbury ◽  
J. S. Blakemore
Keyword(s):  
Gallium Arsenide ◽  
Cross Section ◽  
Photoionization Cross Section
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