Experimental Results from γ-irradiated GaAs Crystals Grown with Different Techniques

1993 ◽  
Vol 302 ◽  
Author(s):  
W. Bencivelli ◽  
E. Bertolucci ◽  
U. Bottigli ◽  
A. Cavallini ◽  
S. D'Auria ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Room Temperature ◽  
Detection Efficiency ◽  
Collection Efficiency ◽  
Experimental Results ◽  
Simulation Program ◽  
Charge Collection ◽  
X Rays ◽  
Charge Collection Efficiency ◽  
Digital Radiology

ABSTRACTGallium Arsenide crystals are among the most efficient detectors of X-rays at room temperature. Different GaAs crystals have been irradiated with photons from radioactive sources, to compare their response in view of a possible application for Digital Radiology. The detectors have been obtained by various manufacturers and with different techniques (LEC and LPE crystals). Experimental results include I-V curves, charge collection efficiency and detection efficiency as a function of bias. A comparison is made with a simulation program.

Characterization of heterogeneities in detector-grade CdZnTe crystals

2009 ◽  
Vol 24 (4) ◽  
pp. 1361-1367 ◽  
Author(s):  
M.C. Duff ◽  
D.B. Hunter ◽  
A. Burger ◽  
M. Groza ◽  
V. Buliga ◽  
...  
Keyword(s):  
Room Temperature ◽  
Collection Efficiency ◽  
Analytical Techniques ◽  
Charge Collection ◽  
Secondary Phases ◽  
Charge Collection Efficiency

Synthetic Cd1–xZnxTe or “CZT” crystals are highly suitable for γ-spectrometers operating at room temperature. Secondary phases (SP) within CZT, presumed to be Te metal, have detrimental impacts on the charge collection efficiency of fabricated device. Using analytical techniques rather than arbitrary theoretical definitions, we identify two SP morphologies: (i) many void, 20-μm “negative” crystals with 65-nm nanoparticle residues of Si, Cd, Zn, and Te and (ii) 20-μm hexagonal-shaped bodies, which are composites of metallic Te layers with cores of amorphous and polycrystalline CZT material that surround the voids.

Semi-Insulating InP Particle Detectors For X- And γ-Ray Detection

1997 ◽  
Vol 487 ◽  
Author(s):  
P. G. Pelfer ◽  
F. Dubecký ◽  
R. Fomari ◽  
M. Pikna ◽  
M. Krempaský ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Energy Resolution ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Back Contact ◽  
X Rays ◽  
Particle Detectors ◽  
Charge Collection Efficiency ◽  
Γ Ray ◽  
Α Particles

AbstractA study of electrical properties and detection performances of the semi-insulating (SI) InP based detectors is presented. Detectors with a top P+ layer and a Schottky back contact give the charge collection efficiency about 90 % and an energy resolution 3.7% (FWHM) for 5.48MeV α-particles at 250 K. Detection of X-rays (122 keV and 60 keV) photons in temperature region 220–250 K is demonstrated. Multiple peaking observed during detection of photons is discussed.

Effect of Heat Treatment on Electrical Properties and Charge Collection Efficiency of X-Ray Sensors Based on Chrome-Compensated Gallium Arsenide

2016 ◽  
Vol 59 (2) ◽  
pp. 295-300
Author(s):  
A. N. Zarubin ◽  
I. I. Kolesnikova ◽  
A. D. Lozinskaya ◽  
V. A. Novikov ◽  
M. S. Skakunov ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Gallium Arsenide ◽  
Electrical Properties ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
X Ray

Study of Ion Induced Damage in 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 389-392 ◽  
Author(s):  
A. Lo Giudice ◽  
P. Oliveira ◽  
F. Fizzotti ◽  
Claudio Manfredotti ◽  
E. Vittone ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Collection Efficiency ◽  
Radiation Hardness ◽  
Experimental Results ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
Fitting Procedure ◽  
Mev Protons

The damage produced by 2 MeV protons on a 4H-SiC Schottky diode has been investigated by monitoring the charge collection efficiency as the function of the ion fluence. A new algorithm based on the Shockley-Ramo-Gunn theorem has been developed to interpret the experimental results. The fitting procedure provides a parameter which is proportional to the average number of active electrical traps generated by a single ion, which can be profitably used to estimate the radiation hardness of the material.

INFLUENCE OF WINDOW EFFECT OF SEMICONDUCTOR X-RAY DETECTORS ON THE RESPONSE FUNCTION AND DETECTION EFFICIENCY

1992 ◽  
Vol 02 (03) ◽  
pp. 255-262
Author(s):  
K. SHIMA
Keyword(s):  
Response Function ◽  
Detection Efficiency ◽  
Collection Efficiency ◽  
Dead Layer ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
X Ray ◽  
Window Effect ◽  
Low Energy Tail ◽  
The Dead

In order to search the dead layer of a Si(Li) x-ray detector, the jump ratio of the detection efficiency observed at the Si-K-edge energy was precisely measured by changing the incident photon energies at around 1.84 keV by using monoenergetic photons provided by SOR. Here, the dead layer is meant to be the Si region where the charge collection efficiency, η, is zero. As the result, the dead layers for two detectors investigated at present turned out to be absent. On the other hand, the Si front layers in which the charge collection is incomplete (0<η<1) were estimated to be 0.26 µm and 0.17 µm from a simple analysis for low energy tail spectrum. From these results, the effect of detector window on the response function and detection efficiency is discussed.

3D imaging of radiation damage in silicon sensor and spatial mapping of charge collection efficiency

2013 ◽  
Vol 8 (03) ◽  
pp. C03023-C03023 ◽  
Author(s):  
M Jakubek ◽  
J Jakubek ◽  
J Zemlicka ◽  
M Platkevic ◽  
V Havranek ◽  
...  
Keyword(s):  
Radiation Damage ◽  
3D Imaging ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Spatial Mapping ◽  
Charge Collection Efficiency ◽  
Silicon Sensor
Sign in / Sign up

Export Citation Format

Share Document