AN INTERMEDIATE DONOR LEVEL IN N-TYPE GALLIUM ARSENIDE

1966 ◽  
Vol 44 (5) ◽  
pp. 941-948 ◽  
Author(s):  
J. Basinski
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Hall Effect ◽  
Conduction Band ◽  
High Mobility ◽  
Theoretical Expression ◽  
Donor Level ◽  
Hall Effect Measurements

The activation energy and corresponding concentration of an unknown donor level in high-mobility n-type gallium arsenide has been determined. The energy and concentration have been found by fitting a suitable theoretical expression to results of Hall Effect measurements in the range 77–360 °K. The energy found is 0.158 eV below the conduction band.

The influence of high uniaxial stress on the ΓI, C conduction band effective mass of gallium arsenide

1980 ◽  
Vol 34 (5) ◽  
pp. 335-338 ◽  
Author(s):  
J.C. Portal ◽  
R.A. Cooke ◽  
R.A. Stradling ◽  
A.R. Adams ◽  
C.N. Ahmad
Keyword(s):  
Gallium Arsenide ◽  
Effective Mass ◽  
Conduction Band ◽  
Uniaxial Stress

scholarly journals Density Functional Theory Study on Defect Feature of AsGaGaAsin Gallium Arsenide

2015 ◽  
Vol 2015 ◽  
pp. 1-5
Author(s):  
Deming Ma ◽  
Xi Chen ◽  
Hongbo Qiao ◽  
Wei Wang ◽  
Wei Shi ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Gallium Arsenide ◽  
Conduction Band ◽  
Density Functional ◽  
Crystal Surface ◽  
Deep Level ◽  
Donor Level ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Formation Energies

We investigate the defect feature ofAsGaGaAsdefect in gallium arsenide clusters in detail by using first-principles calculations based on the density functional theory (DFT). Our calculations reveal that the lowest donor level ofAsGaGaAsdefect on the gallium arsenide crystal surface is 0.85 eV below the conduction band minimum, while the lowest donor level of theAsGaGaAsdefect inside the gallium arsenide bulk is 0.83 eV below the bottom of the conduction band, consistent with gallium arsenide EL2 defect level of experimental value (Ec-0.82 eV). This suggests thatAsGaGaAsdefect is one of the possible gallium arsenide EL2 deep-level defects. Moreover, our results also indicate that the formation energies of internalAsGaGaAsand surfaceAsGaGaAsdefects are predicted to be around 2.36 eV and 5.54 eV, respectively. This implies that formation ofAsGaGaAsdefect within the crystal is easier than that of surface. Our results offer assistance in discussing the structure of gallium arsenide deep-level defect and its effect on the material.

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

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