Gallium arsenide (GaAs), conduction band effective masses and related parameters

Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10832182_180 ◽

2005 ◽

pp. 1-12

Author(s):

Keyword(s):

Gallium Arsenide ◽

Conduction Band ◽

Effective Masses

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Analysis of conduction band structure of gallium arsenide in the vicinity of two valley and three valley band models using a physical magnetoresistance effect in the temperature range 300–650 K

Journal of Applied Physics ◽

10.1063/1.333336 ◽

1984 ◽

Vol 55 (8) ◽

pp. 2940-2944

Author(s):

T. K. Saxena ◽

Shashi Bala ◽

P. C. Mathur ◽

H. L. Hartnagel

Keyword(s):

Gallium Arsenide ◽

Band Structure ◽

Conduction Band ◽

Magnetoresistance Effect ◽

Temperature Range

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Determination of the Conduction Band Effective Masses of the Germanium—Silicon Alloy by Infrared Cyclotron Resonance

physica status solidi (b) ◽

10.1002/pssb.2220730136 ◽

1976 ◽

Vol 73 (1) ◽

pp. 361-370 ◽

Cited By ~ 18

Author(s):

D. Fink ◽

R. Braunsteih

Keyword(s):

Conduction Band ◽

Cyclotron Resonance ◽

Silicon Alloy ◽

Effective Masses ◽

Germanium Silicon

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Germanium (Ge), conduction band, effective masses

Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10832182_488 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Conduction Band ◽

Effective Masses

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AN INTERMEDIATE DONOR LEVEL IN N-TYPE GALLIUM ARSENIDE

Canadian Journal of Physics ◽

10.1139/p66-078 ◽

1966 ◽

Vol 44 (5) ◽

pp. 941-948 ◽

Cited By ~ 11

Author(s):

J. Basinski

Keyword(s):

Activation Energy ◽

Gallium Arsenide ◽

Hall Effect ◽

Conduction Band ◽

High Mobility ◽

Theoretical Expression ◽

Donor Level ◽

Hall Effect Measurements

The activation energy and corresponding concentration of an unknown donor level in high-mobility n-type gallium arsenide has been determined. The energy and concentration have been found by fitting a suitable theoretical expression to results of Hall Effect measurements in the range 77–360 °K. The energy found is 0.158 eV below the conduction band.

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Gallium arsenide (GaAs), camel’s back structure of X6 conduction band minimum

Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10832182_182 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Gallium Arsenide ◽

Conduction Band ◽

Conduction Band Minimum

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Aluminum antimonide (AlSb), conduction band, camel’s back structure and effective masses

Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10832182_92 ◽

2005 ◽

pp. 1-2

Author(s):

Keyword(s):

Conduction Band ◽

Aluminum Antimonide ◽

Effective Masses

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Indium antimonide (InSb), conduction band, effective masses

Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10832182_371 ◽

2005 ◽

pp. 1-10

Author(s):

Keyword(s):

Conduction Band ◽

Indium Antimonide ◽

Effective Masses

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Gallium antimonide (GaSb), conduction band, effective masses

Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10832182_238 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Conduction Band ◽

Gallium Antimonide ◽

Effective Masses

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Gallium arsenide (GaAs), valence bands, effective masses

Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10832182_184 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Gallium Arsenide ◽

Effective Masses ◽

Valence Bands

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Gallium arsenide (GaAs), other parameters related to conduction band minima, g-factors

Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10832182_183 ◽

2005 ◽

pp. 1-5

Author(s):

Keyword(s):

Gallium Arsenide ◽

Conduction Band ◽

G Factors

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