Chopped InGaAs/InP quantum wells for a polarization-independent space switch at 1.53 μm

2000 ◽  
Vol 27 (5-6) ◽  
pp. 509-514
Author(s):  
B.H.P. Dorren ◽  
A.Yu. Silov ◽  
J.E.M. Haverkort ◽  
M.R. Leys ◽  
D.H.P. Maat ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Polarization Independent

Polarization-independent waveguide modulators using 1.57-μm /spl delta/-strained InGaAs-InGaAsP quantum wells

1999 ◽  
Vol 11 (5) ◽  
pp. 554-556 ◽  
Author(s):  
R.E. Bartolo ◽  
S.S. Saini ◽  
T. Ren ◽  
Y. Zhu ◽  
M. Dagenais ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Waveguide Modulators ◽  
Polarization Independent

$\bf 1.55 {\mbi \mu }m$ InGaAs/InAlAs/InP Quantum Wells with Mass-Dependent Width for Polarization-Independent Optical Modulation

1995 ◽  
Vol 34 (Part 2, No. 10A) ◽  
pp. L1280-L1282 ◽  
Author(s):  
Atsushi Hamakawa ◽  
Kiyoteru Ishihara ◽  
Takeharu Yamaguchi ◽  
Yoshiaki Nakano ◽  
Kunio Tada ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Modulation ◽  
Mass Dependent ◽  
Polarization Independent

scholarly journals The Effect Of Composition Modification on the Optical Polarization Independence In Semiconductor Strain Quantum Wells

1995 ◽  
Vol 417 ◽  
Author(s):  
Wallace C. H. Choy ◽  
Hao Feng ◽  
S. K. Kam ◽  
E. Herbert Li
Keyword(s):  
Quantum Wells ◽  
Optical Switching ◽  
Tensile Strain ◽  
High Strain ◽  
Light Hole ◽  
Optical Polarization ◽  
Composition Modification ◽  
Polarization Insensitivity ◽  
Polarization Independent ◽  
Semiconductor Strain

AbstractPolarization independent quantum well (QW) materials operating under electroabsorption effect in optical switching and modulation devices are of intense interest recently. This is a theoretical analysis of the optical properties of strained InGaAs/InP QWs. The method of composition modification based on interdiffusion will be introduced to merge the heavy- and light- hole states in order to achieve polarization insensitivity. Results presented here show that the diffused QWs with and without as-growth tensile strain can both serve in polarization independent electro-absorption requirements. With a suitable design in the interdiffused QW materials, the optical polarization independence can operate from 1.465 to 1.540 μm (tunability of 75 nm) with a maximum absorption change of 2000 cm−1. In the case studied here, over 75% reduction in the required as-growth tensile strain is achieved as compared with the conventional rectangular QWs. This provides us with a simpler way to achieve high strain optical polarization independence through interdiffusion.

Design of composite InAsP/InGaAs quantum wells for a 1.55 μm polarization independent semiconductor optical amplifier

1999 ◽  
Vol 75 (18) ◽  
pp. 2782-2784 ◽  
Author(s):  
J. E. M. Haverkort ◽  
B. H. P. Dorren ◽  
M. Kemerink ◽  
A. Yu. Silov ◽  
J. H. Wolter
Keyword(s):  
Quantum Wells ◽  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Polarization Independent

Strained quantum wells for polarization-independent electrooptic waveguide switches

1992 ◽  
Vol 10 (12) ◽  
pp. 1926-1930 ◽  
Author(s):  
J.E. Zucker ◽  
K.L. Jones ◽  
T.H. Chiu ◽  
B. Tell ◽  
K. Brown-Goebeler
Keyword(s):  
Quantum Wells ◽  
Strained Quantum Wells ◽  
Polarization Independent

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

Sign in / Sign up

Export Citation Format

Share Document