Polarization-independent waveguide modulators using 1.57-μm /spl delta/-strained InGaAs-InGaAsP quantum wells

1999 ◽  
Vol 11 (5) ◽  
pp. 554-556 ◽  
Author(s):  
R.E. Bartolo ◽  
S.S. Saini ◽  
T. Ren ◽  
Y. Zhu ◽  
M. Dagenais ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Waveguide Modulators ◽  
Polarization Independent

Strain‐compensated InAsP/GaInP multiple quantum wells for 1.3 μm waveguide modulators

1996 ◽  
Vol 68 (1) ◽  
pp. 90-92 ◽  
Author(s):  
X. B. Mei ◽  
K. K. Loi ◽  
H. H. Wieder ◽  
W. S. C. Chang ◽  
C. W. Tu
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Waveguide Modulators

Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3 μm waveguide modulators

1993 ◽  
Vol 63 (13) ◽  
pp. 1833-1835 ◽  
Author(s):  
H. Q. Hou ◽  
A. N. Cheng ◽  
H. H. Wieder ◽  
W. S. C. Chang ◽  
C. W. Tu
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Waveguide Modulators

Relating the chirp parameter to the number of quantum wells in GaAs/AlGaAs waveguide modulators

1989 ◽  
Vol 55 (8) ◽  
pp. 718-720 ◽  
Author(s):  
T. Hausken ◽  
R. H. Yan ◽  
R. J. Simes ◽  
L. A. Coldren
Keyword(s):  
Quantum Wells ◽  
Waveguide Modulators

$\bf 1.55 {\mbi \mu }m$ InGaAs/InAlAs/InP Quantum Wells with Mass-Dependent Width for Polarization-Independent Optical Modulation

1995 ◽  
Vol 34 (Part 2, No. 10A) ◽  
pp. L1280-L1282 ◽  
Author(s):  
Atsushi Hamakawa ◽  
Kiyoteru Ishihara ◽  
Takeharu Yamaguchi ◽  
Yoshiaki Nakano ◽  
Kunio Tada ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Modulation ◽  
Mass Dependent ◽  
Polarization Independent

scholarly journals The Effect Of Composition Modification on the Optical Polarization Independence In Semiconductor Strain Quantum Wells

1995 ◽  
Vol 417 ◽  
Author(s):  
Wallace C. H. Choy ◽  
Hao Feng ◽  
S. K. Kam ◽  
E. Herbert Li
Keyword(s):  
Quantum Wells ◽  
Optical Switching ◽  
Tensile Strain ◽  
High Strain ◽  
Light Hole ◽  
Optical Polarization ◽  
Composition Modification ◽  
Polarization Insensitivity ◽  
Polarization Independent ◽  
Semiconductor Strain

AbstractPolarization independent quantum well (QW) materials operating under electroabsorption effect in optical switching and modulation devices are of intense interest recently. This is a theoretical analysis of the optical properties of strained InGaAs/InP QWs. The method of composition modification based on interdiffusion will be introduced to merge the heavy- and light- hole states in order to achieve polarization insensitivity. Results presented here show that the diffused QWs with and without as-growth tensile strain can both serve in polarization independent electro-absorption requirements. With a suitable design in the interdiffused QW materials, the optical polarization independence can operate from 1.465 to 1.540 μm (tunability of 75 nm) with a maximum absorption change of 2000 cm−1. In the case studied here, over 75% reduction in the required as-growth tensile strain is achieved as compared with the conventional rectangular QWs. This provides us with a simpler way to achieve high strain optical polarization independence through interdiffusion.

Design of composite InAsP/InGaAs quantum wells for a 1.55 μm polarization independent semiconductor optical amplifier

1999 ◽  
Vol 75 (18) ◽  
pp. 2782-2784 ◽  
Author(s):  
J. E. M. Haverkort ◽  
B. H. P. Dorren ◽  
M. Kemerink ◽  
A. Yu. Silov ◽  
J. H. Wolter
Keyword(s):  
Quantum Wells ◽  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Polarization Independent
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