Atomistic analysis of the electronic structure of m -plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations

2015 ◽  
Vol 253 (5) ◽  
pp. 853-860 ◽  
Author(s):  
Daniel P. Tanner ◽  
Miguel A. Caro ◽  
Eoin P. O'Reilly ◽  
Stefan Schulz
Keyword(s):  
Electronic Structure ◽  
Quantum Wells ◽  
Excited States ◽  
Carrier Localization ◽  
Random Alloy

Electronic Structure of the Ground and Low-Lying Excited States of TiP

1996 ◽  
Vol 100 (33) ◽  
pp. 13971-13975 ◽  
Author(s):  
V.-A. Glezakou ◽  
Aristides Mavridis ◽  
James F. Harrison
Keyword(s):  
Electronic Structure ◽  
Excited States

The electronic structure of InGaAs/InP quantum wells measured by Fourier transform photoluminescence excitation spectroscopy

1996 ◽  
Vol 80 (12) ◽  
pp. 6855-6860 ◽  
Author(s):  
J. Dalfors ◽  
T. Lundström ◽  
P. O. Holtz ◽  
H. H. Radamson ◽  
B. Monemar ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Fourier Transform ◽  
Quantum Wells ◽  
Photoluminescence Excitation

Electronic structure of CO adsorbed on small Cu clusters: Theoretical study on excited states

1989 ◽  
Vol 39 (16) ◽  
pp. 11907-11913 ◽  
Author(s):  
Yuji Mochizuki ◽  
Kiyoshi Tanaka ◽  
Kimio Ohno ◽  
Hiroshi Tatewaki
Keyword(s):  
Electronic Structure ◽  
Excited States ◽  
Theoretical Study

Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

2014 ◽  
Vol 115 (8) ◽  
pp. 083112 ◽  
Author(s):  
Zhi Li ◽  
Junjie Kang ◽  
Bo Wei Wang ◽  
Hongjian Li ◽  
Yu Hsiang Weng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Light Emitting
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