X‐ray shielding parameters of lanthanum oxide added waste soda‐lime glass

2020 ◽  
Author(s):  
Iskender Akkurt ◽  
Kadir Gunoglu ◽  
Recep Kurtuluş ◽  
Taner Kavas
Keyword(s):  
Lanthanum Oxide ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray

scholarly journals Characterization of MgO:Cd thin films grown by SILAR method

2018 ◽  
Vol 96 (7) ◽  
pp. 804-809 ◽  
Author(s):  
Harun Güney ◽  
Demet İskenderoğlu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Soda Lime ◽  
Morphological Properties ◽  
Emission Region ◽  
Soda Lime Glass ◽  
Silar Method ◽  
Soda Lime Glass Substrate ◽  
X Ray ◽  
Cd Doping

The undoped and 1%, 2%, and 3% Cd-doped MgO nanostructures were grown by SILAR method on the soda lime glass substrate. X-ray diffractometer (XRD), ultraviolet–visible spectrometer, scanning electron microscope, photoluminescence (PL), and X-ray photoelectron spectroscopy measurements were taken to investigate Cd doping effects on the structural, optical, and morphological properties of MgO nanostructures. XRD measurements show that the samples have cubic structure and planes of (200), (220) of MgO and (111), (200), and (220) of CdO. It was observed that band gaps increase with rising Cd doping rate in MgO thin film. The surface morphology of samples demonstrates that MgO nanostructures have been affected by the Cd doping. PL measurements show that undoped and Cd-doped MgO thin films can radiate in the visible emission region.

Facile Synthesis of Cu2SnSe3 Thin Film via Sol-Gel Process

2014 ◽  
Vol 1004-1005 ◽  
pp. 774-777 ◽  
Author(s):  
Ji Wan Liu ◽  
Gui Lin Chen ◽  
Wei Feng Liu ◽  
Guo Shun Jiang ◽  
Chang Fei Zhu
Keyword(s):  
Low Cost ◽  
Sol Gel ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
X Ray ◽  
Absorbance Spectroscopy ◽  
Sol Gel Process ◽  
Ar Gas ◽  
Pure Cu

A low-cost non-vacuum process for fabrication of Cu2SnSe3 film by sol-gel method and knife-coating process is described. First, a certain amount of Copper (I) chloride and tin (IV) tetrachloride was dissolve into the mixture of water and alcohol and then some Polyvinyl Pyrrolidone (PVP) was added to the solution to obtain based colloidal solution. Next, precursor thin layer was deposited by knife-blading technique on soda-lime glass (SLG). Finally, precursor layer was annealed at selenium flow atmosphere carried by Ar gas at 550oC. Through X-ray diffraction (XRD) and Raman spectra, it is found that pure Cu2SnSe3 film was prepared successfully. Scanning electron microscopy (SEM) and UV–vis–NIR absorbance spectroscopy were used to characterize its morphology and optical bandgap.

Preparation of CIGSS Thin-Film Solar Cells by Rapid Thermal Processing

2006 ◽  
Vol 129 (3) ◽  
pp. 323-326
Author(s):  
Sachin S. Kulkarni ◽  
Jyoti S. Shirolikar ◽  
Neelkanth G. Dhere
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Electrical Characterization ◽  
Soda Lime ◽  
Thin Film Solar Cells ◽  
Soda Lime Glass ◽  
X Ray

Rapid thermal processing (RTP) provides a way to rapidly heat substrates to an elevated temperature to perform relatively short duration processes, typically less than 2–3min long. RTP can be utilized to minimize the process cycle time without compromising process uniformity, thus eliminating a bottleneck in CuIn1−xGaxSe2−ySy (CIGSS) module fabrication. Some approaches have been able to realize solar cells with conversion efficiencies close or equal to those for conventionally processed solar cells with similar device structures. A RTP reactor for preparation of CIGSS thin films on 10cm×10cm substrates has been designed, assembled, and tested at the Florida Solar Energy Center’s PV Materials Lab. This paper describes the synthesis and characterization of CIGSS thin-film solar cells by the RTP technique. Materials characterization of these films was done by scanning electron microscopy, x-ray energy dispersive spectroscopy, x-ray diffraction, Auger electron spectroscopy, electron probe microanalysis, and electrical characterization was done by current–voltage measurements on soda lime glass substrates by the RTP technique. Encouraging results were obtained during the first few experimental sets, demonstrating that reasonable solar cell efficiencies (up to 9%) can be achieved with relatively shorter cycle times, lower thermal budgets, and without using toxic gases.

Influence of Deposition Time and Source-Substrate Distance on Properties of CdTe Thin Films Using Close-Spaced Sublimation at Higher Source Temperature

2013 ◽  
Vol 716 ◽  
pp. 325-327
Author(s):  
Xiao Yan Dai ◽  
Cheng Wu Shi ◽  
Yan Ru Zhang ◽  
Min Yao
Keyword(s):  
Thin Films ◽  
Deposition Time ◽  
Near Infrared ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray ◽  
Source Temperature ◽  
Glass Substrates ◽  
Substrate Distance ◽  
Cdte Thin Films

In this paper, CdTe thin films were deposited on soda-lime glass substrates using CdTe powder as a source by close-spaced sublimation at higher source temperature of 700°C. The influence of the deposition time and the source-substrate distance on the chemical composition, crystal phase, surface morphology and optical band gap of CdTe thin films was systemically investigated by energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscope and the ultraviolet-visible-near infrared absorption spectra, respectively. At the deposition time of 60 min and the source-substrate distance of 5 mm, the CdTe thin films had pyramid appearance with the grain size of 15 μm.

The Effects of Selenization Temperature on the Properties of CIGS Thin Film Prepared by Cu-In-Ga-Se Precursors

2012 ◽  
Vol 528 ◽  
pp. 214-218
Author(s):  
Han Bin Wang ◽  
Xi Jian Zhang ◽  
Qing Pu Wang ◽  
Xue Yan Zhang ◽  
Xiao Yu Liu
Keyword(s):  
Thin Films ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
X Ray ◽  
Degree Of Reaction ◽  
N2 Atmosphere ◽  
Cigs Thin Film ◽  
Morphology Of Films ◽  
Selenization Temperature

CIGS thin films were prepared by selenization of Cu-In-Ga-Se precursors, as a new method, the effects of selenization temperature on the properties of CIGS thin films were studied. First, Cu-In-Ga-Se precursors were deposited onto Mo-coated soda lime glass by evaporation and sputtering method. Then, precursors were selenized at various temperatures in N2 atmosphere for 120 min to form CIGS thin films. The degree of reaction and morphology of films as a function of selenization temperature were analyzed. By means of field emission scanning electron microscope (SEM) and X-ray diffraction (XRD), it was found that CIGS thin films selenized at 450°C exhibit chalcopyrite phase with preferred orientation along the (112) plane.

Effects of Growth Parameters on Surface-morphological, Structural and Electrical Properties of Mo Films by RF Magnetron Sputtering

2008 ◽  
Vol 1123 ◽  
Author(s):  
Shou-Yi Kuo ◽  
Liann-Be Chang ◽  
Ming-Jer Jeng ◽  
Wei-Ting Lin ◽  
Yong-Tian Lu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Growth Parameters ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Soda Lime Glass ◽  
Working Pressure ◽  
Soda Lime Glass Substrate ◽  
X Ray

AbstractThis work reports on the fabrication and characterization of Mo thin films on soda-lime glass substrate grown by reactive RF magnetron sputtering. Film thickness was measured by x-ray step surface profiler. The structural properties and surface morphology were analyzed by x-ray diffraction (XRD), atomic force microscope (AFM) and scanning electron microscopy (SEM). Electrical properties were measured by four-point probe. It was found that the growth parameters, such as argon flow rate, RF power, film thickness, have significant influences on properties of Mo films. The strain on films revealed the complicated relationship with the working pressure, which might be associated with micro structures and impurities. In order to improve the adhesion and electricity, we adopted a two-pressure deposition scheme. The optimal thickness and sheet resistance are νm and 0.12 ω The mechanisms therein will be discussed in detail. Furthermore, we also investigated the diffusion property of Na ion of double Mo films sputtered on soda-lime glass. Our experimental results could lead to better understanding for improving further CIGS-based photovoltaic devices.

scholarly journals Preparation and Characterization ofSb2Te3Thin Films by Coevaporation

2010 ◽  
Vol 2010 ◽  
pp. 1-4 ◽  
Author(s):  
Bin Lv ◽  
Songbai Hu ◽  
Wei Li ◽  
Xia Di ◽  
Lianghuan Feng ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Photoelectron Spectroscopy ◽  
Electrical Transport ◽  
Film Surface ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Conductivity Measurements ◽  
X Ray ◽  
Thin Film Surface

Deposition ofSb2Te3thin films on soda-lime glass substrates by coevaporation of Sb and Te is described in this paper.Sb2Te3thin films were characterized by x-ray diffraction (XRD), x-ray fluorescence (XRF), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), electrical conductivity measurements, and Hall measurements. The abnormal electrical transport behavior occurred fromin situelectrical conductivity measurements. The results indicate that as-grownSb2Te3thin films are amorphous and undergo an amorphous-crystalline transition after annealing, and the posttreatment can effectively promote the formation of Sb-Te bond and prevent oxidation of thin film surface.

Preparation of Cu(In,Ga)Se2 thin films at low substrate temperatures

2001 ◽  
Vol 16 (2) ◽  
pp. 394-399 ◽  
Author(s):  
S. Nishiwaki ◽  
T. Satoh ◽  
Y. Hashimoto ◽  
T. Negami ◽  
T. Wada
Keyword(s):  
Thin Films ◽  
Surface Composition ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Monitoring Method ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

Cu(In,Ga)Se2(CIGS) thin films were prepared at substrate temperatures of 350 to 500 °C. The (In,Ga)2Se2 precursor layers were deposited on Mo coated soda-lime glass and then exposed to Cu and Se fluxes to form CIGS films. The surface composition was probed by a real-time composition monitoring method. The CIGS films were characterized by x-ray diffraction, energy dispersive x-ray spectroscopy, secondary ion mass spectroscopy, and atomic force microscopy. The transient formation of a Cu–Se phase with a high thermal emissivity was observed during the deposition of Cu and Se at a substrate temperature of 350 °C. Faster diffusion of In than Ga from the (In,Ga)2Se3 precursor to the newly formed CIGS layer was observed. A growth model for CIGS films during the deposition of Cu and Se onto (In,Ga)2Se3 precursor is proposed. A solar cell using a CIGS film prepared at about 350 °C showed an efficiency of 12.4%.

Preparation of TiFe thin Films by Pulsed Ion Beam Evaporation

2001 ◽  
Vol 697 ◽  
Author(s):  
Hisayuki Suematsu ◽  
Tsuyoshi Saikusa ◽  
Tsuneo Suzuki ◽  
Weihua Jiang ◽  
Kiyoshi Yatsui
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulse Width ◽  
Ion Beam ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
A Current

AbstractThin films of titanium iron (TiFe) were prepared by a pulsed ion-beam evaporation (IBE) method. A pulsed ion beam of proton accelerated at 1 MV (peak) with a pulse width of 50 ns and a current of 70 kA was focused on TiFe alloy targets. Soda lime glass substrates were placed in front of the targets. Phases in the thin films were identified by X-ray diffraction (XRD). XRD results revealed that the thin films deposited on the glass substrates consist of a TiFe phase. Crystallized Ti-Fe thin films without oxides were successfully obtained. Surface roughness of the thin film was 0.16 m m.

In-Situ XRD Studies of Sequential CuIn(Se, S)2 Formation

2003 ◽  
Vol 763 ◽  
Author(s):  
Jovana Djordjevic ◽  
Eveline Rudigier ◽  
Roland Scheer
Keyword(s):  
Elemental Sulfur ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Elemental Selenium ◽  
Sulfur Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
In Situ Xrd ◽  
Synthesis Procedure

AbstractThe formation of CuInSe2-CuInS2 alloy films from chalcogenisation of different precursors was investigated by in-situ energy dispersive X-ray diffraction (EDXRD). A sequential synthesis procedure was used. Copper and indium (Cu/In = 1.8) were sputtered on molybdenum coated soda-lime glass and selenium was introduced as a layer of elemental selenium or as a In2Se3 layer. Such prepared precursor films were then sulfurized in elemental sulfur vapor. The effects of the selenium precursors and the influence of sulfurization conditions on the resulting absorber films composition and properties were investigated. It is shown that from different precursors, chalcopyrite phases are formed via significantly different formation pathways which are investigated in detail.

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