High-resolution scanning transmission soft X-ray microscopy for rapid probing of nanoparticle distribution and sufferance features in exposed cells

2015 ◽  
Vol 44 (3) ◽  
pp. 163-168 ◽  
Author(s):  
G. Kourousias ◽  
L. Pascolo ◽  
P. Marmorato ◽  
J. Ponti ◽  
G. Ceccone ◽  
...  
1989 ◽  
Vol 169 ◽  
Author(s):  
D. H. Shin ◽  
J. Silcox ◽  
S. E. Russek ◽  
D. K. Lathrop ◽  
R. A. Buhrman

AbstractGrain boundaries in thin films of high Tc YBa2Cu3O7-x superconductors have been investigated with high resolution scanning transmission electron microscope (STEM) imaging and nanoprobe energy dispersive x-ray (EDX) analysis. Atomic resolution images indicate that the grain boundaries are mostly clean, i.e., free of a boundary layer of different phase or of segregation, and are often coherent. EDX microanalysis with a 10 Å spatial resolution also indicates no composition deviation at the grain boundaries.


2014 ◽  
Vol 70 (6) ◽  
pp. 521-523
Author(s):  
Sarah J. Haigh

The latest generation of scanning transmission electron microscopes equipped with high-efficiency energy-dispersive X-ray detectors are breaking new ground with respect to high-resolution elemental imaging of materials. In this issue, Paulauskaset al.[Acta Cryst.(2014), A70, 524–531] demonstrate impressive results when applying this technique to improve understanding of CdTe dislocation structures.


1997 ◽  
Vol 482 ◽  
Author(s):  
H. Lakner ◽  
Q. Liu ◽  
G. Brockt ◽  
A. Radefeld ◽  
F. Schulze-Kraasch ◽  
...  

AbstractWurtzite InGaN/GaN and AlGaN/GaN heterostructures grown on sapphire by metal organic vapor phase epitaxy were studied using scanning transmission electron microscopy (STEM), cathodoluminescence (CL) combined with secondary electron (SE) imaging, high resolution x-ray diffractometry (HRXRD), and atomic force microscopy (AFM).SE imaging and AFM were used to study the surface morphology. The results indicate the presence of the following structural defects on the surface of InGaN/GaN heterostructures: hexagonal mesa-like structures, hexagonal pyramids and micropipes, while the surface of the AlGaN/GaN heterostructures are mirror-like smooth. The local optical properties of defects and defect free regions were studied using spatially resolved CL at low temperature. In addition, the dependence of the optical properties of both sorts of heterostructures on the quantum well width or chemical composition of ternary materials was investigated. The structural properties of the heterostructures were studied by STEM and HRXRD. Convergent beam electron diffraction (CBED) and corresponding simulations, convergent beam imaging (CBIM), and high resolution x-ray diffraction (HRXRD) were used to study the strained layers. Dislocations and interface properties were characterized using bright-field imaging, while the chemical compositions fluctuations were analyzed by Z-contrast imaging and energy dispersive x-ray microanalysis (EDX).


Cells ◽  
2019 ◽  
Vol 8 (2) ◽  
pp. 164 ◽  
Author(s):  
Kunio Shinohara ◽  
Shigenobu Toné ◽  
Takeo Ejima ◽  
Takuji Ohigashi ◽  
Atsushi Ito

Soft X-ray microscopy was applied to study the quantitative distribution of DNA, RNA, histone, and proteins other than histone (represented by BSA) in mammalian cells, apoptotic nuclei, and a chromosome at spatial resolutions of 100 to 400 nm. The relative distribution of closely related molecules, such as DNA and RNA, was discriminated by the singular value decomposition (SVD) method using aXis2000 software. Quantities of nucleic acids and proteins were evaluated using characteristic absorption properties due to the 1s–π * transition of N=C in nucleic acids and amide in proteins, respectively, in the absorption spectra at the nitrogen K absorption edge. The results showed that DNA and histone were located in the nucleus. By contrast, RNA was clearly discriminated and found mainly in the cytoplasm. Interestingly, in a chromosome image, DNA and histone were found in the center, surrounded by RNA and proteins other than histone. The amount of DNA in the chromosome was estimated to be 0.73 pg, and the content of RNA, histone, and proteins other than histone, relative to DNA, was 0.48, 0.28, and 4.04, respectively. The method we present in this study could be a powerful approach for the quantitative molecular mapping of biological samples at high resolution.


2003 ◽  
Vol 11 (6) ◽  
pp. 8-13 ◽  
Author(s):  
Nestor J. Zaluzec

Imaging of sub-micron , sub-surface features of thick optically dense materials at high resolution has always been a difficult and/or time consuming task in materials research. For the most part this role has been relegated to technologically complex and expensive instrumentation having highly penetrating radiation, such as the synchrotron- based Scanning Transmission X-ray Microscope (STXM) or involves the careful preparation of thin cross-section slices for study using the Transmission/Scanning Transmission Electron Microscope (TEM/STEM).


Author(s):  
H. Murakoshi ◽  
T. Tsuchiya ◽  
H. Kakibayashi

The characteristics of advanced semiconductor devices are affected by contamination due to impurity atoms with sizes at the nanometer level, so it is very important to evaluate such contamination with nanometer-level resolution. In order to cope with this task, we have developed an x-ray elemental mapping system, attached to a 300-kV FE-TEM, with an information limit of 0.11 nm.Both small spot size and sufficient probe current are necessary for high-resolution and highsensitivity x-ray elemental mapping. The elemental mapping is performed with the scanning transmission electron microscope(STEM) mode. For high-resolution STEM imaging, the objective lens works with high excitation as a condenser-objective single lens where the aberrations of the other illuminating lenses are demagnified to negligible level, allowing the extremely small spot size to be obtained. The probe current, however, decreases in proportion to the square of the demagnification of the illuminating system. In this study, the optimum illuminating condition for elemental mapping is examined.


Author(s):  
Carolien Callaert ◽  
Marnik Bercx ◽  
Dirk Lamoen ◽  
Joke Hadermann

Bi2Se3 is a thermoelectric material and a topological insulator. It is slightly conducting in its bulk due to the presence of defects and by controlling the defects different physical properties can be fine tuned. However, studies of the defects in this material are often contradicting or inconclusive. Here, the defect structure of Bi2Se3 is studied with a combination of techniques: high-resolution scanning transmission electron microscopy (HR-STEM), high-resolution energy-dispersive X-ray (HR-EDX) spectroscopy, precession electron diffraction tomography (PEDT), X-ray diffraction (XRD) and first-principles calculations using density functional theory (DFT). Based on these results, not only the observed defects are discussed, but also the discrepancies in results or possibilities across the techniques. STEM and EDX revealed interstitial defects with mainly Bi character in an octahedral coordination in the van der Waals gap, independent of the applied sample preparation method (focused ion beam milling or cryo-crushing). The inherent character of these defects is supported by their observation in the structure refinement of the EDT data. Moreover, the occupancy probability of the defects determined by EDT is inversely proportional to their corresponding DFT calculated formation energies. STEM also showed the migration of some atoms across and along the van der Waals gap. The kinetic barriers calculated using DFT suggest that some paths are possible at room temperature, while others are most probably beam induced.


Author(s):  
A. V. Crewe

The high resolution STEM is now a fact of life. I think that we have, in the last few years, demonstrated that this instrument is capable of the same resolving power as a CEM but is sufficiently different in its imaging characteristics to offer some real advantages.It seems possible to prove in a quite general way that only a field emission source can give adequate intensity for the highest resolution^ and at the moment this means operating at ultra high vacuum levels. Our experience, however, is that neither the source nor the vacuum are difficult to manage and indeed are simpler than many other systems and substantially trouble-free.


Author(s):  
James F. Hainfeld ◽  
Kyra M. Alford ◽  
Mathias Sprinzl ◽  
Valsan Mandiyan ◽  
Santa J. Tumminia ◽  
...  

The undecagold (Au11) cluster was used to covalently label tRNA molecules at two specific ribonucleotides, one at position 75, and one at position 32 near the anticodon loop. Two different Au11 derivatives were used, one with a monomaleimide and one with a monoiodacetamide to effect efficient reactions.The first tRNA labeled was yeast tRNAphe which had a 2-thiocytidine (s2C) enzymatically introduced at position 75. This was found to react with the iodoacetamide-Aun derivative (Fig. 1) but not the maleimide-Aun (Fig. 2). Reaction conditions were 37° for 16 hours. Addition of dimethylformamide (DMF) up to 70% made no improvement in the labeling yield. A high resolution scanning transmission electron micrograph (STEM) taken using the darkfield elastically scattered electrons is shown in Fig. 3.


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