Influence of Gas Flow Ratio in PE-CVD Process on Mechanical Properties of Silicon Nitride Film

2008 ◽  
Vol 3 (3) ◽  
pp. 281-289 ◽  
Author(s):  
Hyun-Jin Oh ◽  
Yoshitada Isono ◽  
Takahiro Namazu ◽  
Yoshihiro Saito ◽  
Akira Yamaguchi
Keyword(s):  
Mechanical Properties ◽  
Silicon Nitride ◽  
Gas Flow ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Flow Ratio ◽  
Gas Flow Ratio

The Applicability of Fluorinated Silicon Nitride Film As Bottom Antireflective Layer In Deep Ultraviolet Lithography

1996 ◽  
Vol 446 ◽  
Author(s):  
Jun Byung-Hyuk ◽  
Han Sang-Soo ◽  
Kim Dong-Wan ◽  
Kang Ho-Young ◽  
Koh Young-Bum ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Excimer Laser ◽  
Inductively Coupled Plasma ◽  
Gas Flow ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Ultraviolet Lithography ◽  
Si Substrates ◽  
Laser Lithography ◽  
Krf Excimer Laser

AbstractThis study describes the use of fluorinated silicon nitride film as a bottom antireflective layer (BARL) material suitable for line-patterning in quarter-micron KrF excimer laser lithography. For the structures of photoresist/BARL (300Å)/c-Si and photoresist/BARL (300 Å )/W-Si at a wavelength of 248nm, 0% reflectance could be achieved when the refractive index (n) and extinction coefficient (k) values of the film are 2.11 and 0.68 or 2.05 and 0.59, respectively. The fluorinated silicon nitride thin films on p-type (100) Si substrates obtained by inductively coupled plasma enhanced CVD have been evaluated with the variations of NF3 flow rates under the two conditions of SiH4:N2=2:15 and 3:20 (seem). The films optical constants and reflectance were investigated by spectroscopic ellipsometry combined with a reflectance simulation program. The film n and k values at 248nm vary in the ranges of 1.67~2.35 and 0.01~0.69, respectively, depending on gas flow ratio of SiH4:N2:NF3. Low reflectance of below 5% can be obtained from reflectance simulation for two deposition conditions with a BARL thickness of 300Å. In addition, the reflectance could be reduced to almost 0% by controlling film thickness. Finally, the antireflective layer performance was investigated using KrF excimer laser lithography.

scholarly journals Effects of the Nitrogen Flow Ratio and Substrate Bias on the Mechanical Properties of W–N and W–Si–N Films

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1252
Author(s):  
Li-Chun Chang ◽  
Ming-Ching Sung ◽  
Li-Heng Chu ◽  
Yung-I Chen
Keyword(s):  
Mechanical Properties ◽  
Wear Resistance ◽  
Gas Flow ◽  
High Wear Resistance ◽  
Substrate Bias ◽  
Nitrogen Flow ◽  
Flow Ratio ◽  
Substrate Bias Voltage ◽  
Gas Flow Ratio ◽  
Bonding Characteristics

The reactive gas flow ratio and substrate bias voltage are crucial sputtering parameters for fabricating transition metal nitride films. In this study, W–N films were prepared using sputtering with nitrogen flow ratios (f) of 0.1–0.5. W–N and W–Si–N films were then prepared using an f level of 0.4 and substrate bias varying from 0 to −150 V by using sputtering and co-sputtering, respectively. The variations in phase structures, bonding characteristics, mechanical properties, and wear resistance of the W–N and W–Si–N films were investigated. The W–N films prepared with nitrogen flow ratios of 0.1–0.2, 0.3, and 0.4–0.5 displayed crystalline W, amorphous W–N, and crystalline W2N, respectively. The W–N films prepared using a nitrogen flow ratio of 0.4 and substrate bias voltages of −50 and −100 V exhibited favorable mechanical properties and high wear resistance. The mechanical properties of the amorphous W–Si–N films were not related to the magnitude of the substrate bias.

Mechanical Properties of Diamond-Structured Polymer Microlattices Coated with the Silicon Nitride Film

2015 ◽  
Vol 18 (2) ◽  
pp. 236-240 ◽  
Author(s):  
Yong Feng Zhou ◽  
Chang Zhuang Yao ◽  
Qing Lin Yang ◽  
Lin Guo ◽  
Lei Jiang
Keyword(s):  
Mechanical Properties ◽  
Silicon Nitride ◽  
Nitride Film ◽  
Silicon Nitride Film

Hydrogen Concentration Analysis in Pecvd and Rtcvd Silicon Nitride Thin Films and It's Impact on Device Performance

2001 ◽  
Vol 664 ◽  
Author(s):  
C. Y. Wang ◽  
E. H. Lim ◽  
H. Liu ◽  
J. L. Sudijono ◽  
T. C. Ang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Threshold Voltage ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Gate Oxide ◽  
Nitride Film ◽  
Device Performance ◽  
Gas Flow Ratio ◽  
The Impact

ABSTRACTIn this paper the impact of the ESL (Etch Stop layer) nitride on the device performance especially the threshold voltage (Vt) has been studied. From SIMS analysis, it is found that different nitride gives different H concentration, [H] in the Gate oxide area, the higher [H] in the nitride film, the higher H in the Gate Oxide area and the lower the threshold voltage. It is also found that using TiSi instead of CoSi can help to stop the H from diffusing into Gate Oxide/channel area, resulting in a smaller threshold voltage drift for the device employed TiSi. Study to control the [H] in the nitride film is also carried out. In this paper, RBS, HFS and FTIR are used to analyze the composition changes of the SiN films prepared using Plasma enhanced Chemical Vapor deposition (PECVD), Rapid Thermal Chemical Vapor Deposition (RTCVD) with different process parameters. Gas flow ratio, RF power and temperature are found to be the key factors that affect the composition and the H concentration in the film. It is found that the nearer the SiN composition to stoichiometric Si3N4, the lower the [H] in SiN film because there is no excess silicon or nitrogen to be bonded with H. However the lowest [H] in the SiN film is limited by temperature. The higher the process temperature the lower the [H] can be obtained in the SiN film and the nearer the composition to stoichiometric Si3N4.

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