Influence of nitrogen gas flow ratio on gallium nitride film growth using high-density convergent plasma sputtering device at room temperature

2021 ◽  
Vol 39 (1) ◽  
pp. 013001
Author(s):  
T. Motomura ◽  
T. Tabaru ◽  
Y. Fujio ◽  
T. Okuyama
Keyword(s):  
Gallium Nitride ◽  
Gas Flow ◽  
Room Temperature ◽  
Film Growth ◽  
Nitride Film ◽  
Flow Ratio ◽  
Nitrogen Gas ◽  
Plasma Sputtering ◽  
Gas Flow Ratio ◽  
Gallium Nitride Film

Influence of Gas Flow Ratio in PE-CVD Process on Mechanical Properties of Silicon Nitride Film

2008 ◽  
Vol 3 (3) ◽  
pp. 281-289 ◽  
Author(s):  
Hyun-Jin Oh ◽  
Yoshitada Isono ◽  
Takahiro Namazu ◽  
Yoshihiro Saito ◽  
Akira Yamaguchi
Keyword(s):  
Mechanical Properties ◽  
Silicon Nitride ◽  
Gas Flow ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Flow Ratio ◽  
Gas Flow Ratio

TiN Gate Work Function Control Using Nitrogen Gas Flow Ratio and RTA-Temperature

2007 ◽  
Author(s):  
Y. X. Liu ◽  
T. Hayashida ◽  
T. Matsukawa ◽  
K. Endo ◽  
M. Masahara ◽  
...  
Keyword(s):  
Work Function ◽  
Gas Flow ◽  
Flow Ratio ◽  
Nitrogen Gas ◽  
Gas Flow Ratio ◽  
Gate Work Function

Effect of Gallium Nitride Film Growth Conditions on Surface Segregation

2018 ◽  
Vol 54 (1) ◽  
pp. 26-31
Author(s):  
Yu. Ya. Tomashpolsky ◽  
V. M. Matyuk ◽  
N. V. Sadovskaya
Keyword(s):  
Gallium Nitride ◽  
Surface Segregation ◽  
Film Growth ◽  
Growth Conditions ◽  
Nitride Film ◽  
Gallium Nitride Film

Nitrogen gas flow ratio controlled PVD TiN metal gate technology for FinFET CMOS

2007 ◽  
Author(s):  
Yongxun Liu ◽  
Tetsuro Hayashida ◽  
Takashi Matsukawa ◽  
Kazuhiko Endo ◽  
Meishoku Masahara ◽  
...  
Keyword(s):  
Gas Flow ◽  
Flow Ratio ◽  
Metal Gate ◽  
Nitrogen Gas ◽  
Gas Flow Ratio ◽  
Tin Metal

Fabrication of Tungsten-Tellurite Glass Thin Films using Radio Frequency Magnetron Sputtering Method and Optical Property Characterization

2004 ◽  
Vol 817 ◽  
Author(s):  
Ki-Young Yoo ◽  
Sanghoon Shin ◽  
Youngman Kim ◽  
Jong-Ha Moon ◽  
Jin Hyeok Kim
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Gas Flow ◽  
Room Temperature ◽  
Tellurite Glass ◽  
Processing Parameters ◽  
Flow Ratio ◽  
Rf Power ◽  
Gas Flow Ratio

AbstractTungsten-tellurite glass thin films were fabricated by radio-frequency (rf) magnetron sputtering method at various processing parameters such as substrate temperatures, Ar/O2 processing gas flow ratio, processing pressure, and rf power from a 70TeO2-30WO3 target fabricated by solid–state sintering method. The effects of processing parameters on the growth rate, the surface morphologies, the crystallinity, and refractive indices of thin films were investigated using atomic force microscopy, X-ray diffractometer, scanning electron microscopy, and UV spectrometer. Amorphous glass thin films with a surface roughness of 4∼6 nm were obtained only at room temperature and crystalline phase were observed in all as-deposited thin films prepared at above the room temperature. The deposition rate strongly depends on the processing parameters. It increases as the rf power increases and the processing pressure decreases. Especially, it changes remarkably as varying the Ar/O2 gas flow ratio from 40sccm/0sccm to 0sccm/40sccm. When the films were formed in pure Ar atmosphere it shows a deposition rate of ∼0.2 μm /h, whereas ∼1.5 μm/h when the films was formed in pure O2 atmosphere.

Gallium Nitride Film Growth Using a Plasma Based Migration Enhanced Afterglow Chemical Vapor Deposition System

2012 ◽  
Vol 51 (1) ◽  
pp. 01AF02 ◽  
Author(s):  
K. Scott A. Butcher ◽  
Brad W. Kemp ◽  
Ilian B. Hristov ◽  
Penka Terziyska ◽  
Peter W. Binsted ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Gallium Nitride Film

Gallium Nitride Film Growth Using a Plasma Based Migration Enhanced Afterglow Chemical Vapor Deposition System

2012 ◽  
Vol 51 (1S) ◽  
pp. 01AF02 ◽  
Author(s):  
K. Scott A. Butcher ◽  
Brad W. Kemp ◽  
Ilian B. Hristov ◽  
Penka Terziyska ◽  
Peter W. Binsted ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Gallium Nitride Film
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