Correlation between the Carbon Nanotube Growth Rate and Byproducts in Antenna‐Type Remote Plasma Chemical Vapor Deposition Observed by Vacuum Ultraviolet Absorption Spectroscopy

Small ◽  
2019 ◽  
Vol 15 (48) ◽  
pp. 1901504 ◽  
Author(s):  
Masafumi Inaba ◽  
Takumi Ochiai ◽  
Kazuyoshi Ohara ◽  
Ryogo Kato ◽  
Tasuku Maki ◽  
...  
Keyword(s):  
Growth Rate ◽  
Vapor Deposition ◽  
Vacuum Ultraviolet ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Antenna Type ◽  
Ultraviolet Absorption Spectroscopy ◽  
Carbon Nanotube Growth ◽  
Nanotube Growth

A comparison of diamond growth rate using in-liquid and conventional plasma chemical vapor deposition methods

2009 ◽  
Vol 105 (11) ◽  
pp. 113306 ◽  
Author(s):  
Yoshiyuki Takahashi ◽  
Hiromichi Toyota ◽  
Shinfuku Nomura ◽  
Shinobu Mukasa ◽  
Toru Inoue
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Growth Rate and Crystallinity of Nanocrystalline Silicon Film Grown by Electron Beam Excited Plasma Chemical Vapor Deposition

2000 ◽  
Vol 39 (Part 1, No. 10) ◽  
pp. 6035-6036 ◽  
Author(s):  
Tadashi Ito ◽  
Mitsuru Imaizumi ◽  
Koji Yamaguchi ◽  
Kazuhiko Okitsu ◽  
Ichiro Konomi ◽  
...  
Keyword(s):  
Growth Rate ◽  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Role of nitrogen in the homoepitaxial growth on diamond anvils by microwave plasma chemical vapor deposition

2007 ◽  
Vol 22 (4) ◽  
pp. 1112-1117 ◽  
Author(s):  
Wei Qiu ◽  
Yogesh K. Vohra ◽  
Samuel T. Weir
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Homoepitaxial Growth ◽  
Diamond Anvils

The catalytic effect of nitrogen during the homoepitaxial diamond growth on a diamond anvil was investigated using isotopically enriched carbon-13 methane in a feed-gas mixture in a microwave plasma chemical vapor deposition reactor. The use of isotopically enriched carbon-13 allows us to precisely measure the film thickness in this homoepitaxial growth process by Raman spectroscopy. It is found that the addition of 0.4 sccm of nitrogen to an H2/CH4/O2 gas-phase mixture increases the growth rate by a factor of 2.3. This enhanced growth rate with the addition of trace amounts of nitrogen allows for a quick encapsulation of embedded sensors in the designer diamond anvils and is a key control parameter in the fabrication process. Photoluminescence spectroscopy reveals nitrogen-vacancy defect centers in the high-growth-rate diamonds. Atomic force microscopy reveals dramatic changes in the surface microstructure as is indicated by a total loss of step-flow growth morphology on the addition of nitrogen in the plasma.

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