Measurement of Local Si-Nanowire Growth Kinetics Using In situ Transmission Electron Microscopy of Heated Cantilevers

Small ◽  
2010 ◽  
Vol 6 (18) ◽  
pp. 2058-2064 ◽  
Author(s):  
Christian Kallesøe ◽  
Cheng-Yen Wen ◽  
Kristian Mølhave ◽  
Peter Bøggild ◽  
Frances M. Ross
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Kinetics ◽  
Nanowire Growth ◽  
Si Nanowire ◽  
Transmission Electron

Growth kinetics of CoSi2 and Ge islands observed with in situ transmission electron microscopy

Micron ◽  
1999 ◽  
Vol 30 (1) ◽  
pp. 21-32 ◽  
Author(s):  
F.M. Ross ◽  
P.A. Bennett ◽  
R.M. Tromp ◽  
J. Tersoff ◽  
M. Reuter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Kinetics ◽  
Transmission Electron ◽  
Kinetics Of

scholarly journals Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy

2016 ◽  
Vol 52 (33) ◽  
pp. 5686-5689 ◽  
Author(s):  
Yi-Chia Chou ◽  
Federico Panciera ◽  
Mark C. Reuter ◽  
Eric A. Stach ◽  
Frances M. Ross
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Nanowire Growth ◽  
Si Nanowire ◽  
Environmental Transmission ◽  
Transmission Electron ◽  
Aberration Corrected ◽  
Environmental Transmission Electron Microscopy

We visualize atomic level dynamics during Si nanowire growth using aberration corrected environmental transmission electron microscopy, and compare with lower pressure results from ultra-high vacuum microscopy.

scholarly journals Ultrahigh temperature in situ transmission electron microscopy based bicrystal coble creep in zirconia I: Nanowire growth and interfacial diffusivity

2020 ◽  
Vol 199 ◽  
pp. 530-541
Author(s):  
K.S.N. Vikrant ◽  
Robson L. Grosso ◽  
Lin Feng ◽  
Eliana N.S. Muccillo ◽  
Dereck N.F. Muche ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Nanowire Growth ◽  
Transmission Electron ◽  
Ultrahigh Temperature ◽  
Coble Creep

Straight and kinked InAs nanowire growth observed in situ by transmission electron microscopy

Nano Research ◽  
2014 ◽  
Vol 7 (8) ◽  
pp. 1188-1194 ◽  
Author(s):  
Filip Lenrick ◽  
Martin Ek ◽  
Knut Deppert ◽  
Lars Samuelson ◽  
L. Reine Wallenberg
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Nanowire Growth ◽  
Transmission Electron

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

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