scholarly journals Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy

2016 ◽  
Vol 52 (33) ◽  
pp. 5686-5689 ◽  
Author(s):  
Yi-Chia Chou ◽  
Federico Panciera ◽  
Mark C. Reuter ◽  
Eric A. Stach ◽  
Frances M. Ross
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Nanowire Growth ◽  
Si Nanowire ◽  
Environmental Transmission ◽  
Transmission Electron ◽  
Aberration Corrected ◽  
Environmental Transmission Electron Microscopy

We visualize atomic level dynamics during Si nanowire growth using aberration corrected environmental transmission electron microscopy, and compare with lower pressure results from ultra-high vacuum microscopy.

scholarly journals In-situ observation of the Changes in Shape and Surface Structure of Pt Nanoparticulate Catalysts in Reactant Gases by Aberration-corrected Environmental Transmission Electron Microscopy

2013 ◽  
Vol 19 (S2) ◽  
pp. 1664-1665
Author(s):  
H. Yoshida ◽  
H. Omote ◽  
M. Haruta ◽  
S. Takeda
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Structure ◽  
In Situ Observation ◽  
Environmental Transmission ◽  
Transmission Electron ◽  
Aberration Corrected ◽  
Environmental Transmission Electron Microscopy

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

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