Ion beam analyses of ceramics and glasses in nuclear energy

1994 ◽  
Vol 22 (1-12) ◽  
pp. 472-476 ◽  
Author(s):  
Hj. Matzke
Keyword(s):  
Nuclear Energy ◽  
Ion Beam

scholarly journals Investigation of thermal transport in composites and ion beam irradiated materials for nuclear energy applications

2016 ◽  
Vol 32 (1) ◽  
pp. 204-216 ◽  
Author(s):  
M. Khafizov ◽  
V. Chauhan ◽  
Y. Wang ◽  
F. Riyad ◽  
N. Hang ◽  
...  
Keyword(s):  
Thermal Transport ◽  
Nuclear Energy ◽  
Ion Beam ◽  
Energy Applications ◽  
Image Position

Abstract

Ion beam amorphization of muscovite mica

1996 ◽  
Vol 11 (7) ◽  
pp. 1819-1824 ◽  
Author(s):  
C. Templier ◽  
F. Desage ◽  
J. C. Desoyer ◽  
G. Hishmeh ◽  
L. Cartz ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Nuclear Energy ◽  
Ion Beam ◽  
Recoil Energy ◽  
Rare Gas ◽  
Helium Ions ◽  
Ionization Energy Loss ◽  
Transmission Electron ◽  
Sufficient Energy ◽  
Muscovite Mica

The microstructure of a muscovite mica exposed to a rare gas ion beam has been studied by transmission electron microscopy. The investigation of damage without implantation was carried out using argon and helium ions of sufficient energy to traverse the 100–150 nm mica specimens. For 340 keV Ar++ irradiation, amorphization of mica occurred at a fluence as low as 3.5 × 1014 ions · cm−2, which corresponds to 0.29 dpa. Muscovite can be amorphized using 80 keV helium ions, but this requires a much higher fluence and damage production of 4.6 × 10−6 ions · cm−2 and 0.60 dpa, respectively. Since helium irradiation results principally in ionization energy loss, it indicates that amorphization of muscovite results mainly from nuclear interactions. Complete amorphization of muscovite mica is found to take place for all ions at approximately the same amount of nuclear energy transfer to energetic primary knock-on atoms, assuming a recoil energy greater than 500 eV. This suggests that amorphization occurs directly in dense displacement cascades. A significant amount of helium, 100 ppm, can be implanted into muscovite mica without destroying the crystal structure.

Investigation on mechanisms for ion Beam Induced Degradation of Polyimide

1989 ◽  
Vol 157 ◽  
Author(s):  
X.L. Xu ◽  
Zhou Zuyao ◽  
Chen Lizhi ◽  
Zou Shichang
Keyword(s):  
Energy Loss ◽  
Silicon Substrate ◽  
Nuclear Energy ◽  
Ion Beam ◽  
Mass Effect ◽  
Polyimide Film ◽  
Electronic Energy ◽  
Polyimide Films ◽  
Loss Process ◽  
Nucl Instr

ABSTRACTThree types of ions with different atomic masses (B , Ar and As ) were chosen to irradiate polyimide films in similar conditions in order to check mechanisms of the formation of ion beam induced damage in polyimide. A four-point probe technique was used to measure sheet resistivities of implanted films. An ion mass effect on conductivity of ion irradiated polyimide film was discovered. The ion mass effect on ion beam induced change of conductivity and on the energy loss process of the ions in polyimide suggest that the electronic energy loss of incident ions is an important factor for the increase of conductivity of implanted polyimide, and the contributions of recoil ionization are restricted by the grave damages as a result of nuclear energy loss process of ions in targets. Our hypothesis is supported by automatic spreading resistance measurement of B implanted polyimide film coated on silicon substrate. The results of this work have been compared with the hypothesis of degradation through direct knock on of atoms in polyimide, proposed by D.Fink et al [Nucl. Instr. and Meths B32 (1988) 125]

Sign in / Sign up

Export Citation Format

Share Document