Investigation on mechanisms for ion Beam Induced Degradation of Polyimide

1989 ◽  
Vol 157 ◽  
Author(s):  
X.L. Xu ◽  
Zhou Zuyao ◽  
Chen Lizhi ◽  
Zou Shichang
Keyword(s):  
Energy Loss ◽  
Silicon Substrate ◽  
Nuclear Energy ◽  
Ion Beam ◽  
Mass Effect ◽  
Polyimide Film ◽  
Electronic Energy ◽  
Polyimide Films ◽  
Loss Process ◽  
Nucl Instr

ABSTRACTThree types of ions with different atomic masses (B , Ar and As ) were chosen to irradiate polyimide films in similar conditions in order to check mechanisms of the formation of ion beam induced damage in polyimide. A four-point probe technique was used to measure sheet resistivities of implanted films. An ion mass effect on conductivity of ion irradiated polyimide film was discovered. The ion mass effect on ion beam induced change of conductivity and on the energy loss process of the ions in polyimide suggest that the electronic energy loss of incident ions is an important factor for the increase of conductivity of implanted polyimide, and the contributions of recoil ionization are restricted by the grave damages as a result of nuclear energy loss process of ions in targets. Our hypothesis is supported by automatic spreading resistance measurement of B implanted polyimide film coated on silicon substrate. The results of this work have been compared with the hypothesis of degradation through direct knock on of atoms in polyimide, proposed by D.Fink et al [Nucl. Instr. and Meths B32 (1988) 125]

Energy losses of ions implanted in matter

1996 ◽  
Vol 11 (11) ◽  
pp. 2876-2883 ◽  
Author(s):  
J. H. Liang ◽  
K. Y. Liao
Keyword(s):  
Energy Loss ◽  
Nuclear Energy ◽  
Critical Energy ◽  
Carbon Films ◽  
Electronic Energy ◽  
Energy Losses ◽  
Nuclear Energy Loss ◽  
Light Ions ◽  
First Moment ◽  
First Four Moments

A set of simple and accurate formulae for the first four moments of nuclear and electronic energy losses is proposed. A new variable is introduced to include the finite maximum-impact-parameter effect in the nuclear stopping process, which is assumed to be infinite in most studies. A critical energy at which the electronic energy loss is equal to the nuclear energy loss is also defined. It determines whether the nuclear or the electronic stopping process is the dominant mechanism in terms of incident-ion energy. The critical energy increases for heavy ions implanted in heavy target materials during the first moment of energy loss. The second moment of electronic energy loss is important only for light ions implanted at high ion energies. The third and fourth moments of nuclear energy loss are much larger than those of the electronic energy loss for all ion-target combinations. Theoretical predications of the projected ranges and range stragglings for gold ions implanted in carbon films are close to the experimental data when these proposed four moments of nuclear and electronic energy losses are considered.

Energy-Dependent Deformation of Colloidal Silica Nanoparticles under Room Temperature Irradiation with MeV Si Ions

2009 ◽  
Vol 5 ◽  
pp. 61-67 ◽  
Author(s):  
Juan Carlos Cheang-Wong ◽  
Ulises Morales ◽  
Eder Reséndiz ◽  
Alejandra López-Suárez
Keyword(s):  
Energy Loss ◽  
Room Temperature ◽  
Ion Beam ◽  
Sample Surface ◽  
Silica Particles ◽  
Electronic Energy ◽  
Particle Deformation ◽  
Synthesis Conditions ◽  
Spherical Silica Particles ◽  
Complete Deformation

Spherical submicrometer-sized silica particles were prepared from a reaction mixture containing tetraethoxysilane, ammonia and ethanol, and deposited onto silicon wafers. The properties of these SiO2 particles depend on their size, size distribution and shape. Even if some of these characteristics can be perfectly controlled by appropriate synthesis conditions, several alternative approaches must be explored in order to modify the shape of silica particles. The samples were then irradiated at room temperature with Si ions at different energies (4, 6 and 8 MeV) and fluences up to 5×1015 Si/cm2, at an angle of 45° with respect to the sample surface. After the Si irradiation the spherical silica particles turned into ellipsoidal particles, as a result of the increase of the particle dimension perpendicular to the ion beam and a decrease in the parallel direction. This effect increases with the ion fluence and depends on the electronic energy loss of the impinging ions. We observed that the particle deformation decreases with the beam energy, mainly because our samples were irradiated at room temperature. Thermal effects must be studied in detail in order to elucidate the complete deformation mechanism, as the existence of additional mechanisms related to the electronic energy loss effects can not be excluded.

scholarly journals The role of electronic energy loss in ion beam modification of materials

2015 ◽  
Vol 19 (1) ◽  
pp. 1-11 ◽  
Author(s):  
William J. Weber ◽  
Dorothy M. Duffy ◽  
Lionel Thomé ◽  
Yanwen Zhang
Keyword(s):  
Energy Loss ◽  
Ion Beam ◽  
Electronic Energy ◽  
Ion Beam Modification ◽  
Modification Of Materials

High Resolution XRD Studies of Ion Beam Irradiated InGaAs/InP Multi Quantum Wells

2007 ◽  
Vol 1020 ◽  
Author(s):  
S. Dhamodaran ◽  
N Sathish ◽  
Anand P Pathak ◽  
Andrzej Turos ◽  
Devesh K Avasthi ◽  
...  
Keyword(s):  
High Resolution ◽  
Energy Loss ◽  
Quantum Wells ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Electronic Energy ◽  
Higher Order ◽  
Organic Chemical ◽  
X Ray

AbstractMulti quantum wells of InGaAs/InP grown by metal organic chemical vapor deposition have been irradiated using swift heavy ions. Irradiation has been performed using 150MeV Ag and 200MeV Au ions. Both as-grown and irradiated samples were subjected to rapid thermal annealing at 500 and 7000C for 60s. As-grown, irradiated and annealed samples were subjected to high resolution x-ray diffraction studies. Both symmetric and asymmetric scans were analyzed. The as-grown and Ag ion irradiated samples show sharp and highly ordered satellite peaks whereas, the Au ion irradiated samples show broad and low intense peaks. The higher order satellite peaks of the annealed samples vanished with increase of annealing temperature from 500 to 7000C, indicating mixing induced interfacial disorder. Annealing of irradiated samples show higher mixing and disorder and no higher order satellite peaks were observed. Negligible strain was observed after high temperature annealing of as grown samples. Strain values calculated from the X-ray studies indicate that the irradiated samples have higher strain which has been reduced upon annealing. This indicates that the annealing induced mixing occurs maintaining the lattice parameter close to that of the substrate. The effect of electronic energy loss for interface mixing has been discussed in detail. The role of incident ion fluence in combination with the electronic energy loss will also be discussed in detail. The results have been compared with the literature and discussed in detail.

scholarly journals Synthesis of Pt nanoparticles and their burrowing into Si due to synergistic effects of ion beam energy losses

2014 ◽  
Vol 5 ◽  
pp. 1864-1872 ◽  
Author(s):  
Pravin Kumar ◽  
Udai Bhan Singh ◽  
Kedar Mal ◽  
Sunil Ojha ◽  
Indra Sulania ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Energy Loss ◽  
Synergistic Effects ◽  
Ion Beam ◽  
Pt Nanoparticles ◽  
Electronic Energy ◽  
Energy Losses ◽  
Silicide Phase ◽  
Medium Energy ◽  
Synthesis Mechanism

We report the synthesis of Pt nanoparticles and their burrowing into silicon upon irradiation of a Pt–Si thin film with medium-energy neon ions at constant fluence (1.0 × 1017 ions/cm2). Several values of medium-energy neon ions were chosen in order to vary the ratio of the electronic energy loss to the nuclear energy loss (S e/S n) from 1 to 10. The irradiated films were characterized using Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). A TEM image of a cross section of the film irradiated with S e/S n = 1 shows ≈5 nm Pt NPs were buried up to ≈240 nm into the silicon. No silicide phase was detected in the XRD pattern of the film irradiated at the highest value of S e/S n. The synergistic effect of the energy losses of the ion beam (molten zones are produced by S e, and sputtering and local defects are produced by S n) leading to the synthesis and burrowing of Pt NPs is evidenced. The Pt NP synthesis mechanism and their burrowing into the silicon is discussed in detail.

Electron energy loss spectroscopy of diamond-like carbon thin films

1992 ◽  
Vol 50 (2) ◽  
pp. 1272-1273
Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Ion Beam Deposition ◽  
Chemistry Research ◽  
Carbon Thin Films ◽  
Electron Energy Loss ◽  
Beam Deposition

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.

scholarly journals Ion tracks in silicon formed by much lower energy deposition than the track formation threshold

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
H. Amekura ◽  
M. Toulemonde ◽  
K. Narumi ◽  
R. Li ◽  
A. Chiba ◽  
...  
Keyword(s):  
Nuclear Energy ◽  
Energy Deposition ◽  
Ion Irradiation ◽  
High Energy ◽  
Electronic Energy ◽  
Synergy Effect ◽  
Ion Tracks ◽  
Track Formation ◽  
Low Energies ◽  
High Energy Ions

AbstractDamaged regions of cylindrical shapes called ion tracks, typically in nano-meters wide and tens micro-meters long, are formed along the ion trajectories in many insulators, when high energy ions in the electronic stopping regime are injected. In most cases, the ion tracks were assumed as consequences of dense electronic energy deposition from the high energy ions, except some cases where the synergy effect with the nuclear energy deposition plays an important role. In crystalline Si (c-Si), no tracks have been observed with any monomer ions up to GeV. Tracks are formed in c-Si under 40 MeV fullerene (C60) cluster ion irradiation, which provides much higher energy deposition than monomer ions. The track diameter decreases with decreasing the ion energy until they disappear at an extrapolated value of ~ 17 MeV. However, here we report the track formation of 10 nm in diameter under C60 ion irradiation of 6 MeV, i.e., much lower than the extrapolated threshold. The diameters of 10 nm were comparable to those under 40 MeV C60 irradiation. Furthermore, the tracks formed by 6 MeV C60 irradiation consisted of damaged crystalline, while those formed by 40 MeV C60 irradiation were amorphous. The track formation was observed down to 1 MeV and probably lower with decreasing the track diameters. The track lengths were much shorter than those expected from the drop of Se below the threshold. These track formations at such low energies cannot be explained by the conventional purely electronic energy deposition mechanism, indicating another origin, e.g., the synergy effect between the electronic and nuclear energy depositions, or dual transitions of transient melting and boiling.

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