Composition-Depth profiling and interface analysis of surface coatings using ball cratering and the scanning auger microprobe

1979 ◽  
Vol 1 (6) ◽  
pp. 204-210 ◽  
Author(s):  
J. M. Walls ◽  
D. D. Hall ◽  
D. E. Sykes
Keyword(s):  
Depth Profiling ◽  
Surface Coatings ◽  
Interface Analysis ◽  
Scanning Auger Microprobe

Chemical State Mapping and Depth Profiling in a Scanning Auger Microprobe

2010 ◽  
Vol 16 (S2) ◽  
pp. 44-45
Author(s):  
C Nielsen ◽  
K Tsutsumi
Keyword(s):  
Depth Profiling ◽  
Chemical State ◽  
Scanning Auger Microprobe

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Characterization of Multilayered Automotive Paint Systems Including Depth Profiling and Interface Analysis

1997 ◽  
pp. 279-300 ◽  
Author(s):  
Karlis Adamsons ◽  
Kathryn Lloyd ◽  
Katherine Stika ◽  
Dennis Swartzfager ◽  
Dennis Walls ◽  
...  
Keyword(s):  
Depth Profiling ◽  
Interface Analysis ◽  
Paint Systems ◽  
Automotive Paint

AES depth profiling and interface analysis of C/Ta bilayers

2005 ◽  
Vol 252 (5) ◽  
pp. 2056-2062 ◽  
Author(s):  
A. Zalar ◽  
J. Kovač ◽  
B. Praček ◽  
S. Hofmann ◽  
P. Panjan
Keyword(s):  
Depth Profiling ◽  
Interface Analysis

Preferential Sputtering of Ni3Al Single Crystals Studied Using Atom-Probe Field-Ion Microscopy and XPS

1981 ◽  
Vol 39 ◽  
pp. 16-17
Author(s):  
M.P. Thomas ◽  
A.R. Waugh ◽  
M.J. Southon ◽  
Brian Ralph
Keyword(s):  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Depth Profiling ◽  
Analytical Techniques ◽  
Atom Probe ◽  
Probe Field ◽  
Preferential Sputtering ◽  
Argon Ion Bombardment ◽  
Argon Ion

It is well known that ion-induced sputtering from numerous multicomponent targets results in marked changes in surface composition (1). Preferential removal of one component results in surface enrichment in the less easily removed species. In this investigation, a time-of-flight atom-probe field-ion microscope A.P. together with X-ray photoelectron spectroscopy XPS have been used to monitor alterations in surface composition of Ni3Al single crystals under argon ion bombardment. The A.P. has been chosen for this investigation because of its ability using field evaporation to depth profile through a sputtered surface without the need for further ion sputtering. Incident ion energy and ion dose have been selected to reflect conditions widely used in surface analytical techniques for cleaning and depth-profiling of samples, typically 3keV and 1018 - 1020 ion m-2.

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

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