Photoelectron spectroscopy of electronic surface structure of the Cs/GaN and Cs/InN interfaces

2020 ◽  
Vol 52 (10) ◽  
pp. 620-625
Author(s):  
Sergei Timoshnev ◽  
Galina Benemanskaya ◽  
Georgi Iluridze ◽  
Tamaz Minashvili
1989 ◽  
Vol 163 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Shigeo Goto

AbstractSurface structure of (NH4)2S treated GaAs. is investigated using PL (PhotoLuminescence), XPS (X-ray Photoelectron Spectroscopy) and RHEED (Reflection of High Energy Electron beam Diffraction). The data taken with these techniques show the strong dependence upon the crystal orientations coming from the stabilities of chemical bonds of Ga-S and As-S on GaAs crystals. The greater enhancement of PL intensity, the clearer RHEED patterns and the smaller amount of oxides on (111)A than (111)B implies the realization of a more stable structure composed mainly of the Ga-S chemical bond.


2012 ◽  
Vol 111 (3) ◽  
pp. 034903 ◽  
Author(s):  
X. Song ◽  
R. Caballero ◽  
R. Félix ◽  
D. Gerlach ◽  
C. A. Kaufmann ◽  
...  

1998 ◽  
Vol 4 (4) ◽  
pp. 257-266 ◽  
Author(s):  
Bobby G. Russell ◽  
William E. Moddeman ◽  
Janine C. Birkbeck ◽  
Stephen E. Wright ◽  
David S. Millington ◽  
...  

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