Correlation of electronic surface properties and surface structure on cleaved silicon surfaces

1972 ◽  
Vol 43 (10) ◽  
pp. 3917-3919 ◽  
Author(s):  
F. Bäuerle ◽  
W. Mönch ◽  
M. Henzler
2013 ◽  
Vol 612 ◽  
pp. 1-9 ◽  
Author(s):  
E. Beyreuther ◽  
J. Becherer ◽  
A. Thiessen ◽  
S. Grafström ◽  
L.M. Eng

2018 ◽  
Vol 10 (2) ◽  
Author(s):  
Chris M. Bhadra ◽  
Marco Werner ◽  
Vladimir A. Baulin ◽  
Vi Khanh Truong ◽  
Mohammad Al Kobaisi ◽  
...  

Author(s):  
Barbara Farkas ◽  
Aleksandar Zivkovic ◽  
Veikko Uahengo ◽  
Nelson Yaw Dzade ◽  
Nora Henriette De Leeuw

Zinc phosphides (ZnP2 and Zn3P2) are emerging absorber materials for photovoltaic applications owing to their abundancy and non-toxic nature. Herein, we provide a comprehensive characterisation of the surface structure, composition,...


1976 ◽  
Vol 57 (1) ◽  
pp. 375-384 ◽  
Author(s):  
V Anishchik ◽  
L.M Falicov ◽  
Felix Yndurain

1996 ◽  
Vol 448 ◽  
Author(s):  
W. R. Wampler

AbstractThe energetics of copper segregation to silicon surfaces were examined by measuring the Cu coverage after equilibration between Cu on the surface and internal Cu3Si, for which the Cu chemical potential is known. For oxide-free surfaces the Cu coverage was close to one monolayer on (111) surfaces but was much smaller on (100) surfaces. The Cu coverage was greatly reduced by oxide passivation of the surface. LEED showed the 7×7 structure of the clean (111) silicon surface converted to a quasiperiodic 5×5 structure after equilibrating with Cu3Si. The 2×1 LEED patterns for (100) surfaces indicated no change in surface structure due to the Cu3Si. These results show that the free energy of copper in Cu3Si is higher than that of copper on (111) surfaces but lower than that of copper on (100) surfaces.


2012 ◽  
Vol 111 (3) ◽  
pp. 034903 ◽  
Author(s):  
X. Song ◽  
R. Caballero ◽  
R. Félix ◽  
D. Gerlach ◽  
C. A. Kaufmann ◽  
...  

1995 ◽  
Vol 44-46 ◽  
pp. 775-790
Author(s):  
Jürgen Ristein ◽  
C. Appelt ◽  
T. Gertkemper ◽  
Lothar Ley

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