Effect of height and atomic arrangement of the super-tip of a gas field ion emitter on helium ion beam current

2016 ◽  
Vol 48 (11) ◽  
pp. 1132-1135 ◽  
Author(s):  
Shigekazu Nagai ◽  
Shu Katoh ◽  
Tatsuo Iwata ◽  
Kazuo Kajiwara ◽  
Koichi Hata
Keyword(s):  
Ion Beam ◽  
Beam Current ◽  
Gas Field ◽  
Atomic Arrangement ◽  
Helium Ion

scholarly journals Direct Write of 3D Nanoscale Mesh Objects with Platinum Precursor via Focused Helium Ion Beam Induced Deposition

Micromachines ◽  
2020 ◽  
Vol 11 (5) ◽  
pp. 527
Author(s):  
Alex Belianinov ◽  
Matthew J. Burch ◽  
Anton Ievlev ◽  
Songkil Kim ◽  
Michael G. Stanford ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Source ◽  
Direct Write ◽  
Gas Field ◽  
Critical Dimensions ◽  
3D Mesh ◽  
Nanoscale Structures ◽  
Helium Ion

The next generation optical, electronic, biological, and sensing devices as well as platforms will inevitably extend their architecture into the 3rd dimension to enhance functionality. In focused ion beam induced deposition (FIBID), a helium gas field ion source can be used with an organometallic precursor gas to fabricate nanoscale structures in 3D with high-precision and smaller critical dimensions than focused electron beam induced deposition (FEBID), traditional liquid metal source FIBID, or other additive manufacturing technology. In this work, we report the effect of beam current, dwell time, and pixel pitch on the resultant segment and angle growth for nanoscale 3D mesh objects. We note subtle beam heating effects, which impact the segment angle and the feature size. Additionally, we investigate the competition of material deposition and sputtering during the 3D FIBID process, with helium ion microscopy experiments and Monte Carlo simulations. Our results show complex 3D mesh structures measuring ~300 nm in the largest dimension, with individual features as small as 16 nm at full width half maximum (FWHM). These assemblies can be completed in minutes, with the underlying fabrication technology compatible with existing lithographic techniques, suggesting a higher-throughput pathway to integrating FIBID with established nanofabrication techniques.

scholarly journals Ion beam profiling from the interaction with a freestanding 2D layer

2017 ◽  
Vol 8 ◽  
pp. 682-687 ◽  
Author(s):  
Ivan Shorubalko ◽  
Kyoungjun Choi ◽  
Michael Stiefel ◽  
Hyung Gyu Park
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Current ◽  
Exposure Dose ◽  
Ion Beams ◽  
Gaussian Profile ◽  
Helium Ion ◽  
Spread Function ◽  
Sputtering Yields ◽  
Pattern Resolution

Recent years have seen a great potential of the focused ion beam (FIB) technology for the nanometer-scale patterning of a freestanding two-dimensional (2D) layer. Experimentally determined sputtering yields of the perforation process can be quantitatively explained using the binary collision theory. The main peculiarity of the interaction between the ion beams and the suspended 2D material lies in the absence of collision cascades, featured by no interaction volume. Thus, the patterning resolution is directly set by the beam diameters. Here, we demonstrate pattern resolution beyond the beam size and precise profiling of the focused ion beams. We find out that FIB exposure time of individual pixels can influence the resultant pore diameter. In return, the pore dimension as a function of the exposure dose brings out the ion beam profiles. Using this method of determining an ion-beam point spread function, we verify a Gaussian profile of focused gallium ion beams. Graphene sputtering yield is extracted from the normalization of the measured Gaussian profiles, given a total beam current. Interestingly, profiling of unbeknown helium ion beams in this way results in asymmetry of the profile. Even triangular beam shapes are observed at certain helium FIB conditions, possibly attributable to the trimer nature of the beam source. Our method of profiling ion beams with 2D-layer perforation provides more information on ion beam profiles than the conventional sharp-edge scan method does.

scholarly journals Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

2020 ◽  
Vol 11 ◽  
pp. 1742-1749
Author(s):  
Nico Klingner ◽  
Gregor Hlawacek ◽  
Paul Mazarov ◽  
Wolfgang Pilz ◽  
Fabian Meyer ◽  
...  
Keyword(s):  
Liquid Metal ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Ion Source ◽  
Metal Alloy ◽  
Gas Field ◽  
Helium Ion ◽  
Liquid Metal Alloy ◽  
Ion Species

While the application of focused ion beam (FIB) techniques has become a well-established technique in research and development for patterning and prototyping on the nanometer scale, there is still a large underused potential with respect to the usage of ion species other than gallium. Light ions in the range of m = 1–28 u (hydrogen to silicon) are of increasing interest due to the available high beam resolution in the nanometer range and their special chemical and physical behavior in the substrate. In this work, helium and neon ion beams from a helium ion microscope are compared with ion beams such as lithium, beryllium, boron, and silicon, obtained from a mass-separated FIB using a liquid metal alloy ion source (LMAIS) with respect to the imaging and milling resolution, as well as the current stability. Simulations were carried out to investigate whether the experimentally smallest ion-milled trenches are limited by the size of the collision cascade. While He+ offers, experimentally and in simulations, the smallest minimum trench width, light ion species such as Li+ or Be+ from a LMAIS offer higher milling rates and ion currents while outperforming the milling resolution of Ne+ from a gas field ion source. The comparison allows one to select the best possible ion species for the specific demands in terms of resolution, beam current, and volume to be drilled.

The Gas Field Ion Source for Finely Focused Ion Beam Systems

1995 ◽  
Vol 396 ◽  
Author(s):  
W. Thompson ◽  
A. Armstrong ◽  
S. Etchin ◽  
R. Percival ◽  
A. Saxonis
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Vacuum Chamber ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Source ◽  
Max Planck ◽  
Gas Field ◽  
Ion Optics ◽  
Ion Species

AbstractThe Gas Field Ion Source, GFIS, promises a 109A/(cm2 str) brightness, small beam sizes, and inert gas ion species. If this performance could be demonstrated on a commercial system, the GFIS might replace the liquid metal ion source as the standard source for FIB applications. Recent work at the Max-Planck-Institut für Kernphysik (MPI-K) in Heidelberg, Germany has shown that a GFIS with a ‘Super Tipped’ emitter can be reliably fabricated and can be run with stable helium beam current for more than 200 hours. However, this GFIS source must operate in a bakable UHV chamber, at cryogenic temperatures, and at high voltages with low vibration. A GFIS is now being integrated with high resolution ion optics and a vacuum chamber designed for studying GFIS image quality and ion induced chemistry.

scholarly journals Pulsed Laser-Assisted Helium Ion Nanomachining of Monolayer Graphene—Direct-Write Kirigami Patterns

Nanomaterials ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 1394 ◽  
Author(s):  
Cheng Zhang ◽  
Ondrej Dyck ◽  
David A. Garfinkel ◽  
Michael G. Stanford ◽  
Alex A. Belianinov ◽  
...  
Keyword(s):  
Ion Beam ◽  
Pulsed Laser ◽  
Ion Source ◽  
Ion Sources ◽  
Monolayer Graphene ◽  
Liquid Gallium ◽  
Direct Write ◽  
Gas Field ◽  
Helium Ion ◽  
Helium Gas

A helium gas field ion source has been demonstrated to be capable of realizing higher milling resolution relative to liquid gallium ion sources. One drawback, however, is that the helium ion mass is prohibitively low for reasonable sputtering rates of bulk materials, requiring a dosage that may lead to significant subsurface damage. Manipulation of suspended graphene is, therefore, a logical application for He+ milling. We demonstrate that competitive ion beam-induced deposition from residual carbonaceous contamination can be thermally mitigated via a pulsed laser-assisted He+ milling. By optimizing pulsed laser power density, frequency, and pulse width, we reduce the carbonaceous byproducts and mill graphene gaps down to sub 10 nm in highly complex kiragami patterns.

Nano-engineering with a focused helium ion beam

2011 ◽  
Vol 1354 ◽  
Author(s):  
Diederik J. Maas ◽  
Emile W. van der Drift ◽  
Emile van Veldhoven ◽  
Jeroen Meessen ◽  
Maria Rudneva ◽  
...  
Keyword(s):  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Current ◽  
Helium Ion ◽  
Resolution Imaging ◽  
Application Fields ◽  
Analysis Mode ◽  
Novel Applications ◽  
Ion Backscattering

ABSTRACTAlthough Helium Ion Microscopy (HIM) was introduced only a few years ago, many new application fields are budding. The connecting factor between these novel applications is the unique interaction of the primary helium ion beam with the sample material at and just below its surface. In particular, the HIM secondary electron (SE) signal stems from an area that is very well localized around the point of incidence of the primary beam. This makes the HIM well-suited for both high-resolution imaging as well as high resolution nanofabrication. Another advantage in nanofabrication is the low ion backscattering fraction, leading to a weak proximity effect. The lack of a quantitative materials analysis mode (like EDX in Scanning Electron Microscopy, SEM) and a relatively low beam current as compared to the SEM and the Gallium Focused Ion Beam are the present drawbacks of the HIM.

Stability measurement of neon ion beam current emitted from supertip gas field ion source

2012 ◽  
Author(s):  
Yusuke Suzuki ◽  
Takayuki Asai ◽  
Shigekazu Nagai ◽  
Kazuo Kajiwara ◽  
Koichi Hata ◽  
...  
Keyword(s):  
Ion Beam ◽  
Beam Current ◽  
Ion Source ◽  
Gas Field ◽  
Stability Measurement ◽  
Neon Ion

Effects of Ion Beam Milling on Surface Topography

1973 ◽  
Vol 31 ◽  
pp. 84-85
Author(s):  
P.G. Pawar ◽  
P. Duhamel ◽  
G.W. Monk
Keyword(s):  
Surface Topography ◽  
Ion Beam ◽  
Solid Material ◽  
Beam Current ◽  
Atomic Mass ◽  
Micro Milling ◽  
Ion Milling ◽  
Controlled Atmospheres ◽  
Milling Operations ◽  
Sufficient Energy

A beam of ions of mass greater than a few atomic mass units and with sufficient energy can remove atoms from the surface of a solid material at a useful rate. A system used to achieve this purpose under controlled atmospheres is called an ion miliing machine. An ion milling apparatus presently available as IMMI-III with a IMMIAC was used in this investigation. Unless otherwise stated, all the micro milling operations were done with Ar+ at 6kv using a beam current of 100 μA for each of the two guns, with a specimen tilt of 15° from the horizontal plane.It is fairly well established that ion bombardment of the surface of homogeneous materials can produce surface topography which resembles geological erosional features.

Quantitative Electrical Analysis of FIB Prepared Vias on BiCMOS and CMOS090 Designs

2006 ◽  
Author(s):  
B. Domengès ◽  
P. Poirier
Keyword(s):  
Ion Beam ◽  
Beam Current ◽  
Kelvin Probe ◽  
Metal Line ◽  
Cross Sectional ◽  
Probe Technique ◽  
Cross Sectional Analysis ◽  
Controlling Parameter ◽  
Electrical Analysis ◽  
Sectional Analysis

Abstract In this study, the resistance of FIB prepared vias was characterized by the Kelvin probe technique and their physical characteristics studied using cross-sectional analysis. Two domains of resistivity were isolated in relation to the ion beam current used for the deposition of the via metal (Pt). Also submicrometer vias were investigated on 4.2 µm deep metal lines of a BiCMOS aluminum based design and a CMOS 090 copper based one. It is shown that the controlling parameter is the shape and volume of the contact, and that the contact formation is favored by the amount of over-mill of the via into the metal line it will contact.

Large-Scale Focused Helium Ion Beam Lithography

2021 ◽  
Vol 31 (5) ◽  
pp. 1-4
Author(s):  
Jay C. LeFebvre ◽  
Shane A. Cybart
Keyword(s):  
Large Scale ◽  
Ion Beam ◽  
Ion Beam Lithography ◽  
Helium Ion
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