In this work, the potential of muon spin rotation (μSR) with low-energy muons (LE-μ) for the investigation of oxidation-induced defects at the SiO2/4H-SiC interface is explored. By using implantation energies for the muons in the keV range and comparing the fractions of muonium in different regions, the depth distribution of defects in the first 200 nm of the target material can be resolved. Defect profiles of interfaces with either deposited or thermally grown SiO2 layers on 4H-SiC are compared. The results show an increased number of defects in the case of a thermal oxide, both on the oxide and on the SiC side of the interface, with a spatial extension of a few tens of nm.
Low-Energy Muons as a Tool for a Depth-Resolved Analysis of the SiO2/4H-SiC Interface