Low-energy bismuth primary ion beams for molecular ion detection in TOF-SIMS

2018 ◽  
Vol 36 (3) ◽  
pp. 03F126 ◽  
Author(s):  
Takuya Miyayama ◽  
Shin-ichi Iida
Keyword(s):  
Ion Beams ◽  
Low Energy ◽  
Ion Detection ◽  
Molecular Ion ◽  
Tof Sims

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

An automatic beam positioning system for low energy ion beams

1969 ◽  
Vol 72 (2) ◽  
pp. 217-219 ◽  
Author(s):  
R.B. Brown ◽  
P.D. Bourland ◽  
D. Powers
Keyword(s):  
Ion Beams ◽  
Low Energy ◽  
Positioning System

Transport of intense ion beams and space charge compensation issues in low energy beam lines (invited)

2012 ◽  
Vol 83 (2) ◽  
pp. 02B320 ◽  
Author(s):  
N. Chauvin ◽  
O. Delferrière ◽  
R. Duperrier ◽  
R. Gobin ◽  
P. A. P. Nghiem ◽  
...  
Keyword(s):  
Space Charge ◽  
Charge Compensation ◽  
Ion Beams ◽  
Low Energy ◽  
Energy Beam

Patterning of Ionic Insulator Surfaces with Low-Energy Ion Beams

2012 ◽  
pp. 109-134 ◽  
Author(s):  
Franciszek Krok ◽  
Salah Saeed ◽  
Marek Kolmer ◽  
Marek Szymonski
Keyword(s):  
Ion Beams ◽  
Low Energy

THE ENERGY LOSS, THE DETERIORATION DEPTH, AND THE LIGHT OUTPUT FOR HEAVY IONS IN ZnO:Zn

1967 ◽  
Vol 45 (12) ◽  
pp. 4039-4051 ◽  
Author(s):  
L. Hastings ◽  
A. van Wijngaarden
Keyword(s):  
Energy Loss ◽  
Heavy Ions ◽  
Light Output ◽  
Average Energy ◽  
Ion Beams ◽  
Low Energy ◽  
Energy Losses ◽  
Sufficient Energy ◽  
Low Energy Ions ◽  
Total Average

Local regions on the surface of ZnO:Zn phosphor samples were deteriorated by a large number of low-energy ions. In this manner thin films which did not luminesce under ion bombardment were prepared. The phosphor samples were then scanned across energetic ion beams with sufficient energy to traverse the thin phosphor films. By comparing the luminescent response to this ion excitation in the damaged and undamaged portions of the phosphor surface, the total average energy losses of 1H, 4He, 14N, 40Ar, and 84Kr in passing through the films were determined. It was found that the energy losses for the heavier projectiles, when compared with the energy loss of hydrogen, are appreciably smaller than the energy losses predicted by the Lindhard and Scharff theory.The deterioration depth of the phosphor under prolonged bombardment is proportional to the speed of the damaging projectiles.

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