Effects of electric field in band alignment measurements using photoelectron spectroscopy

2011 ◽  
Vol 44 (8) ◽  
pp. 1091-1095 ◽  
Author(s):  
S. Y. Chiam ◽  
Z. Q. Liu ◽  
J. S. Pan ◽  
K. K. Manippady ◽  
L. M. Wong ◽  
...  
Keyword(s):  
Electric Field ◽  
Photoelectron Spectroscopy ◽  
Band Alignment

Vertical strain and electric field tunable electronic properties of type-II band alignment C2N/InSe van der Waals heterostructure

2019 ◽  
Vol 716 ◽  
pp. 155-161 ◽  
Author(s):  
Khang D. Pham ◽  
Nguyen N. Hieu ◽  
Le M. Bui ◽  
Huynh V. Phuc ◽  
Bui D. Hoi ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Vertical Strain ◽  
Van Der Waals Heterostructure

Band alignment in Ge/GeOx/HfO2/TiO2 heterojunctions as measured by hard x-ray photoelectron spectroscopy

2012 ◽  
Vol 101 (22) ◽  
pp. 222110 ◽  
Author(s):  
A. K. Rumaiz ◽  
J. C. Woicik ◽  
C. Weiland ◽  
Q. Xie ◽  
D. P. Siddons ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Band Alignment ◽  
X Ray

Band alignment of HfO2/Al0.25Ga0.75N determined by x-ray photoelectron spectroscopy: Effect of SiH4 surface treatment

2014 ◽  
Vol 104 (9) ◽  
pp. 091605 ◽  
Author(s):  
Man Hon Samuel Owen ◽  
Maruf Amin Bhuiyan ◽  
Qian Zhou ◽  
Zheng Zhang ◽  
Ji Sheng Pan ◽  
...  
Keyword(s):  
Surface Treatment ◽  
Photoelectron Spectroscopy ◽  
Band Alignment ◽  
X Ray

Tunable electronic properties of GaS-SnS2 heterostructure by strain and electric field

2021 ◽  
Author(s):  
Dahua Ren ◽  
Qiang Li ◽  
Kai Qian ◽  
Xingyi Tan
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
Visible Light ◽  
Electronic Properties ◽  
Electronic Structures ◽  
Density Functional ◽  
Band Alignment ◽  
Promising Candidate ◽  
Functional Theory ◽  
External Strain

Abstract Vertically stacked heterostructures have received extensive attention because of their tunable electronic structures and outstanding optical properties. In this work, we have studied the structural, electronic and optical properties of vertically stacked GaS-SnS2 heterostructure under the frame of density functional theory. We find that the stacked GaS-SnS2 heterostructure is a semiconductor with suitable indirect band gaps of 1.82 eV, exhibiting a type-II band alignment for easily separating the photo-generated carriers. The electronic properties of GaS-SnS2 heterostructure can be effectively tuned by external strain and electric field. The optical absorption of GaS-SnS2 heterostructure is more enhanced by comparison with the GaS monolayer and SnS2 monolayer in the visible light. Our results suggest that GaS-SnS2 heterostructure is a promising candidate for the photocatalyst and photoelectronic devices in visible light.

Tunable type-II band alignment and electronic structure of C3N4/MoSi2N4 heterostructure: Interlayer coupling and electric field

2022 ◽  
Vol 105 (4) ◽  
Author(s):  
Cuong Q. Nguyen ◽  
Yee Sin Ang ◽  
Son-Tung Nguyen ◽  
Nguyen V. Hoang ◽  
Nguyen Manh Hung ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electric Field ◽  
Interlayer Coupling ◽  
Band Alignment ◽  
Type Ii

Vertical strain and electric field tunable band alignment in type-II ZnO/MoSSe van der Waals heterostructures

2021 ◽  
Author(s):  
Pan Wang ◽  
Yixin Zong ◽  
Hao Liu ◽  
Hongyu Wen ◽  
Yueyang Liu ◽  
...  
Keyword(s):  
Electric Field ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Van Der Waals Heterostructures ◽  
Vertical Strain

The band alignment of type-II ZnO/MoSSe vdWH can be tuned to types I and III by strain and the electric field.

Tunable electronic properties of the novel g-ZnO/1T-TiS2 vdW heterostructure by electric field and strain: crossovers in bandgap and band alignment types

2020 ◽  
Vol 22 (14) ◽  
pp. 7412-7420 ◽  
Author(s):  
Kourosh Rahimi
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Band Alignment ◽  
The Novel ◽  
Biaxial Strain ◽  
Tunable Bandgap ◽  
Vdw Heterostructure

The promising g-ZnO/1T-TiS2 vdW heterostructure with tunable bandgap and band alignment type under biaxial strain and electric field was proposed.

Interfacial electronic band alignment of Ta2O5/hydrogen-terminated diamond heterojunction determined by X-ray photoelectron spectroscopy

2013 ◽  
Vol 38 ◽  
pp. 24-27 ◽  
Author(s):  
Jiangwei Liu ◽  
Shaoheng Cheng ◽  
Meiyong Liao ◽  
Masataka Imura ◽  
Akihiro Tanaka ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Band Alignment ◽  
Electronic Band ◽  
X Ray
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