XPS study on band alignment at PtO-terminated ZnO(0001) interface

2010 ◽  
Vol 42 (10-11) ◽  
pp. 1528-1531 ◽  
Author(s):  
Taeyoung Kim ◽  
Michiko Yoshitake ◽  
Shinjiro Yagyu ◽  
Slavomir Nemsak ◽  
Takahiro Nagata ◽  
...  
Keyword(s):  
Band Alignment ◽  
Xps Study

Energy band alignment at the heterointerface between a nanostructured TiO2 layer and Au22(SG)18 clusters: relevance to metal-cluster-sensitized solar cells

Nanoscale ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 175-184
Author(s):  
Liudmila L. Larina ◽  
Oleksii Omelianovych ◽  
Van-Duong Dao ◽  
Kyunglim Pyo ◽  
Dongil Lee ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Solar Cells ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Metal Cluster ◽  
Band Alignment ◽  
Tio2 Layer ◽  
Electronic Band ◽  
Xps Study ◽  
Sensitized Solar Cells

XPS study of the electronic structure of the Au22(SG)18 clusters and their interface with TiO2 reveals that tailoring of the electronic band structure at the interface can be exploited to increase the efficiency of metal-cluster-sensitized solar cells.

Effects of Surface Doping of Si Absorbers on the Band Alignment and Electrical Performance of TiO2-Based Electron-Selective Contacts

MRS Advances ◽  
2019 ◽  
Vol 4 (13) ◽  
pp. 769-775 ◽  
Author(s):  
Hyunju Lee ◽  
Takefumi Kamioka ◽  
Noritaka Usami ◽  
Yoshio Ohshita
Keyword(s):  
Electrical Transport ◽  
Energy Levels ◽  
Band Alignment ◽  
Electrical Performance ◽  
Si Substrate ◽  
Si Substrates ◽  
Conduction Band Offset ◽  
Electron Transport Property ◽  
Xps Study ◽  
Phosphorus Doped

ABSTRACTWe have investigated the chemical and electrical properties of a thin SiO2/TiO2 stacking layer deposited on n-Si and heavily phosphorus-doped n++ Si substrates to elucidate effects of phosphorus doping of Si absorbers on the band alignment and electrical performance of a SiO2/TiO2 stack-based electron-selective contact deposited on the differently doped Si substrates. From our XPS study, we show a shift of the TiO2 energy levels up to ∼0.13 eV with respect to those of Si as the doping level of Si substrates changes. We also show that the conduction band offset of the SiO2/TiO2 stacking layer at the interface with the n++ Si substrate seems to smaller than that of the SiO2/TiO2 stacking layer at the interface with n-Si substrate. Finally, from our electrical transport measurements, we could conclude that the thinner tunneling barrier, the increased electron density in front of the SiO2 layer in the n++ Si surface, and/or the reduced barrier height by heavy doping, seem to enhance the majority electron transport property of the SiO2/TiO2/n++ Si samples compared to that of the SiO2/TiO2/n-Si samples.

XPS study of the band alignment at ITO/oxide (n-type MoO3 or p-type NiO) interface

2012 ◽  
Vol 209 (7) ◽  
pp. 1291-1297 ◽  
Author(s):  
J. C. Bernède ◽  
S. Houari ◽  
D. Nguyen ◽  
P. Y. Jouan ◽  
A. Khelil ◽  
...  
Keyword(s):  
Band Alignment ◽  
Xps Study ◽  
P Type

scholarly journals XPS Study of Energy Band Alignment between Hf-La Oxides and Si(100)

2013 ◽  
Vol 38 (3) ◽  
pp. 353-357 ◽  
Author(s):  
Akio Ohta ◽  
Hideki Murakami ◽  
Seiichiro Higashi ◽  
Seiichi Miyazaki
Keyword(s):  
Energy Band ◽  
Band Alignment ◽  
Xps Study

XPS study of the chemisorption induced surface segregation in LaNi5 and ThNi5

1981 ◽  
Vol 42 (7) ◽  
pp. 1025-1028 ◽  
Author(s):  
L. Schlapbach ◽  
C.R. Brundle
Keyword(s):  
Surface Segregation ◽  
Xps Study

Scanning-tunneling spectroscopy on conjugated polymer films

2003 ◽  
Vol 771 ◽  
Author(s):  
M. Kemerink ◽  
S.F. Alvarado ◽  
P.M. Koenraad ◽  
R.A.J. Janssen ◽  
H.W.M. Salemink ◽  
...  
Keyword(s):  
Polymer Films ◽  
Conjugated Polymer ◽  
Three Dimensional ◽  
Field Enhancement ◽  
Direct Consequence ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Band Alignment ◽  
Scanning Tunneling ◽  
Order Of Magnitude

AbstractScanning-tunneling spectroscopy experiments have been performed on conjugated polymer films and have been compared to a three-dimensional numerical model for charge injection and transport. It is found that field enhancement near the tip apex leads to significant changes in the injected current, which can amount to more than an order of magnitude, and can even change the polarity of the dominant charge carrier. As a direct consequence, the single-particle band gap and band alignment of the organic material can be directly obtained from tip height-voltage (z-V) curves, provided that the tip has a sufficiently sharp apex.

Impact of Rutile Fraction on TiO2 Visible-Light Absorption and Visible-Light-Induced Photocatalytic Activity

2018 ◽  
Author(s):  
David Maria Tobaldi ◽  
Luc Lajaunie ◽  
ana caetano ◽  
nejc rozman ◽  
Maria Paula Seabra ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Visible Light ◽  
Light Absorption ◽  
Solid Phase ◽  
Diffraction Method ◽  
Band Alignment ◽  
Quantitative Phase Analysis ◽  
Transmission Microscopy ◽  
Visible Light Absorption ◽  
X Ray

<div>Titanium dioxide is by far the most utilised semiconductor material for photocatalytic applications. Still, it is transparent to visible-light. Recently, it has been proved that a type-II band alignment for the rutile−anatase mixture would improve its visible-light absorption.</div><div>In this research paper we thoroughly characterised the real crystalline and amorphous phases of synthesised titanias – thermally treated at different temperatures to get distinct ratios of anatase-rutile-amorphous fraction – as well as that of three commercially available photocatalytic nano-TiO2. </div><div>The structural characterisation was done via advanced X-ray diffraction method, namely the Rietveld-RIR method, to attain a full quantitative phase analysis of the specimens. The microstructure was also investigated via an advanced X-ray method, the whole powder pattern modelling. These methods were validated combining advanced aberration-corrected scanning transmission microscopy and high-resolution electron energy-loss spectroscopy. The photocatalytic activity was assessed in the liquid- and gas-solid phase (employing rhodamine B and 4-chlorophenol, and isopropanol, respectively, as the organic substances to degrade) using a light source irradiating exclusively in the visible-range.</div><div>Optical spectroscopy showed that even a small fraction of rutile (2 wt%) is able to shift to lower energies the apparent optical band gap of an anatase-rutile mixed phase. But is this enough to attain a real photocatalytic activity promoted by merely visible-light?</div><div>We tried to give a reply to that question.</div><div>Photocatalytic activity results in the liquid-solid phase showed that a high surface hydroxylation led to specimen with superior visible light-induced catalytic activity (i.e. dye and ligand-to-metal charge transfer complexes sensitisation effects). That is: not photocatalysis <i>sensu-strictu</i>.</div><div>On the other hand, the gas-solid phase results showed that a higher amount of the rutile fraction (around 10 wt%), together with less recombination of the charge carriers, were more effective for an actual photocatalytic oxidation of isopropanol.</div>

Bulky Cations Improve Band Alignment and Efficiency in Sn-Based Perovskite Solar Cells

2020 ◽  
Author(s):  
Deepak Thrithamarassery Gangadharan ◽  
David A. Valverde-Chávez ◽  
Andres-Felipe Castro-Mendez ◽  
Vivek Prakash ◽  
Ricardo Izquierdo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Band Alignment

A first-principles study on the electronic and optical properties of a type-II C2N/g-ZnO van der Waals heterostructure

2021 ◽  
Vol 23 (6) ◽  
pp. 3963-3973
Author(s):  
Jianxun Song ◽  
Hua Zheng ◽  
Minxia Liu ◽  
Geng Zhang ◽  
Dongxiong Ling ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dft Calculations ◽  
First Principles ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Electronic And Optical Properties ◽  
Direct Bandgap ◽  
Van Der Waals Heterostructure ◽  
Vdw Heterostructure

The structural, electronic and optical properties of a new vdW heterostructure, C2N/g-ZnO, with an intrinsic type-II band alignment and a direct bandgap of 0.89 eV at the Γ point are extensively studied by DFT calculations.

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