Analysis of x-ray irradiation effect in high-k gate dielectrics by time-dependent photoemission spectroscopy using synchrotron radiation

2008 ◽  
Vol 40 (13) ◽  
pp. 1606-1609 ◽  
Author(s):  
T. Tanimura ◽  
S. Toyoda ◽  
H. Kumigashira ◽  
M. Oshima ◽  
K. Ikeda ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Gate Dielectrics ◽  
Time Dependent ◽  
Photoemission Spectroscopy ◽  
Irradiation Effect ◽  
X Ray ◽  
High K

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

2005 ◽  
Vol 45 (5-6) ◽  
pp. 827-830 ◽  
Author(s):  
G. Lucovsky ◽  
J.G. Hong ◽  
C.C. Fulton ◽  
N.A. Stoute ◽  
Y. Zou ◽  
...  
Keyword(s):  
Transition Metal ◽  
Absorption Spectra ◽  
Conduction Band ◽  
Gate Dielectrics ◽  
X Ray ◽  
High K ◽  
X Ray Absorption

Crystallization process of high-k gate dielectrics studied by surface X-ray diffraction

2005 ◽  
Vol 244 (1-4) ◽  
pp. 16-20 ◽  
Author(s):  
N. Terasawa ◽  
K. Akimoto ◽  
Y. Mizuno ◽  
A. Ichimiya ◽  
K. Sumitani ◽  
...  
Keyword(s):  
Crystallization Process ◽  
Gate Dielectrics ◽  
X Ray Diffraction ◽  
X Ray ◽  
High K

Interface reaction of poly-Si/high-k insulator systems studied by hard X-ray photoemission spectroscopy

2005 ◽  
Vol 144-147 ◽  
pp. 491-494 ◽  
Author(s):  
E. Ikenaga ◽  
I. Hirosawa ◽  
A. Kitano ◽  
Y. Takata ◽  
A. Muto ◽  
...  
Keyword(s):  
Interface Reaction ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
High K

Observation of nitrogen species at Al2O3/NO2/H-diamond interfaces by synchrotron radiation x-ray photoemission spectroscopy

2020 ◽  
Vol 128 (13) ◽  
pp. 135702
Author(s):  
Niloy Chandra Saha ◽  
Kazutoshi Takahashi ◽  
Masaki Imamura ◽  
Makoto Kasu
Keyword(s):  
Synchrotron Radiation ◽  
Photoemission Spectroscopy ◽  
Nitrogen Species ◽  
X Ray

A Synchrotron Radiation X-ray Photoemission Spectroscopy Study of n-Propyltriethoxysilane Adsorption on Si(001)-2 × 1 at Room Temperature

2010 ◽  
Vol 114 (49) ◽  
pp. 21450-21456 ◽  
Author(s):  
J.-J. Gallet ◽  
F. Bournel ◽  
D. Pierucci ◽  
M. Bonato ◽  
A. Khaliq ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Room Temperature ◽  
Photoemission Spectroscopy ◽  
Spectroscopy Study ◽  
X Ray

PHOTOEMISSION STUDY OF THE GADOLINIUM/GaAs(100) INTERFACE WITH SYNCHROTRON RADIATION

1997 ◽  
Vol 04 (01) ◽  
pp. 25-31 ◽  
Author(s):  
SHIHONG XU ◽  
FAPEI ZHANG ◽  
ERDONG LU ◽  
XIAOJIANG YU ◽  
FAQIANG XU ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Epitaxial Growth ◽  
Room Temperature ◽  
Interface Structure ◽  
Binding Energies ◽  
Photoemission Spectroscopy ◽  
Interface Formation ◽  
X Ray ◽  
Solution Density ◽  
Photoemission Study

Soft-X-ray photoemission spectroscopy was used to characterize the Gd/GaAs(100)-interface formation at room temperature. At low Gd coverage (<1 Å), the interface is near-abrupt, because no evidence of reaction is observed. With increasing Gd coverage, photoemission signals from chemically reacted product at the interface are observed, causing some intermixing between the overlayer and the substrate. For As atoms, they remain near the interface and have little diffusion. Ga atoms, however, are not kept near the interface, and they can diffuse into the Gd overlayer and segregate onto the surface instead. From the observed variations with metal coverage of binding energies and relative intensities of photoemission signals from the reacted layer, a profile of the interface structure is proposed, and some parameters (decaying length, segregation density and solution density, etc.) have been obtained. The results show that the deposition of Gd onto the GaAs (100) surface induces limited substrate disruption except for some diffusion and segregation of Ga atoms into the metal overlayer. This paper demonstrates that the disruption and epitaxial growth are not mutually exclusive in the Gd / GaAs (100) system.

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