scholarly journals Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics

2008 ◽  
Vol 40 (3-4) ◽  
pp. 758-762 ◽  
Author(s):  
Antonino Scandurra ◽  
Giuseppe Francesco Indelli ◽  
Bruno Pignataro ◽  
Silvestra Di Marco ◽  
Maria Ausilia Di Stefano ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Reactive Sputtering ◽  
Tantalum Nitride ◽  
Plastic Electronics ◽  
Thin Film Resistors ◽  
Tantalum Nitride Thin Film

Stability of tantalum nitride thin film resistors

1990 ◽  
Vol 5 (6) ◽  
pp. 1224-1232 ◽  
Author(s):  
C. L. Au ◽  
W. A. Anderson ◽  
D. A. Schmitz ◽  
J. C. Flassayer ◽  
F. M. Collins
Keyword(s):  
Thin Film ◽  
Amorphous Matrix ◽  
Tantalum Nitride ◽  
Subsequent Aging ◽  
Tunneling Model ◽  
Aging Study ◽  
Potential Applications ◽  
Thin Film Resistors ◽  
Tantalum Nitride Thin Film ◽  
Post Deposition

Post-deposition rapid vacuum annealing of tantalum nitride (Ta2N) thin film resistors (TFR) was successful in improving the temperature coefficient of resistance (TCR) to ±5 ppm/°C with starting TCR at about −140 ppm/°C. A subsequent aging study revealed degradation of the nichrome (NiCr) contact interlayer. Two improved contact layers, TiW and Tamelox (Ta/NiCr), were compared. The structural grain growth induced by the annealing effect resulted in Ta2N films having 100–1000 Å polycrystals in an amorphous matrix. The corresponding current conduction mechanisms were identified with a substrate-assisted tunneling model. The frequency response predicted potential applications to 100 GHz.

Sign in / Sign up

Export Citation Format

Share Document