Effect of annealing temperature on structural and electrical properties of tantalum nitride thin film resistors deposited on SiO[sub 2]∕Si substrates by dc sputtering technique

2006 ◽  
Vol 24 (2) ◽  
pp. 682 ◽  
Author(s):  
Nguyen Duy Cuong ◽  
Nguyen Mai Phuong ◽  
Dong-Jin Kim ◽  
Byoung-Don Kang ◽  
Chang-Soo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Tantalum Nitride ◽  
Si Substrates ◽  
Dc Sputtering ◽  
Structural And Electrical Properties ◽  
Thin Film Resistors ◽  
Tantalum Nitride Thin Film ◽  
Dc Sputtering Technique

Characterization of Tantalum Nitride Thin Films Deposited on SiO[sub 2]∕Si Substrates Using dc Magnetron Sputtering for Thin Film Resistors

2006 ◽  
Vol 153 (2) ◽  
pp. G164 ◽  
Author(s):  
Nguyen Duy Cuong ◽  
Dong-Jin Kim ◽  
Byoung-Don Kang ◽  
Chang Soo Kim ◽  
Kwang-Min Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Tantalum Nitride ◽  
Dc Magnetron Sputtering ◽  
Si Substrates ◽  
Thin Film Resistors

Stability of tantalum nitride thin film resistors

1990 ◽  
Vol 5 (6) ◽  
pp. 1224-1232 ◽  
Author(s):  
C. L. Au ◽  
W. A. Anderson ◽  
D. A. Schmitz ◽  
J. C. Flassayer ◽  
F. M. Collins
Keyword(s):  
Thin Film ◽  
Amorphous Matrix ◽  
Tantalum Nitride ◽  
Subsequent Aging ◽  
Tunneling Model ◽  
Aging Study ◽  
Potential Applications ◽  
Thin Film Resistors ◽  
Tantalum Nitride Thin Film ◽  
Post Deposition

Post-deposition rapid vacuum annealing of tantalum nitride (Ta2N) thin film resistors (TFR) was successful in improving the temperature coefficient of resistance (TCR) to ±5 ppm/°C with starting TCR at about −140 ppm/°C. A subsequent aging study revealed degradation of the nichrome (NiCr) contact interlayer. Two improved contact layers, TiW and Tamelox (Ta/NiCr), were compared. The structural grain growth induced by the annealing effect resulted in Ta2N films having 100–1000 Å polycrystals in an amorphous matrix. The corresponding current conduction mechanisms were identified with a substrate-assisted tunneling model. The frequency response predicted potential applications to 100 GHz.

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