Monte Carlo simulation of Nb Kα secondary fluorescence in EPMA: comparison of PENELOPE simulations with experimental results

2005 ◽  
Vol 37 (11) ◽  
pp. 1012-1016 ◽  
Author(s):  
John H. Fournelle ◽  
Sungtae Kim ◽  
John H. Perepezko
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Experimental Results ◽  
Secondary Fluorescence

scholarly journals Modeling Replenishment of Ultrathin Liquid Perfluoropolyether Z Films on Solid Surfaces Using Monte Carlo Simulation

2014 ◽  
Vol 2014 ◽  
pp. 1-9
Author(s):  
M. S. Mayeed ◽  
T. Kato
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Liquid Films ◽  
Experimental Results ◽  
Solid Surfaces ◽  
Carbon Surface ◽  
Radius Of Gyration ◽  
Constant Multiple ◽  
Molecular Weights ◽  
Lattice Polymer

Applying the reptation algorithm to a simplified perfluoropolyether Z off-lattice polymer model an NVT Monte Carlo simulation has been performed. Bulk condition has been simulated first to compare the average radius of gyration with the bulk experimental results. Then the model is tested for its ability to describe dynamics. After this, it is applied to observe the replenishment of nanoscale ultrathin liquid films on solid flat carbon surfaces. The replenishment rate for trenches of different widths (8, 12, and 16 nms for several molecular weights) between two films of perfluoropolyether Z from the Monte Carlo simulation is compared to that obtained solving the diffusion equation using the experimental diffusion coefficients of Ma et al. (1999), with room condition in both cases. Replenishment per Monte Carlo cycle seems to be a constant multiple of replenishment per second at least up to 2 nm replenished film thickness of the trenches over the carbon surface. Considerable good agreement has been achieved here between the experimental results and the dynamics of molecules using reptation moves in the ultrathin liquid films on solid surfaces.

Secondary Fluorescence of 3D Heterogeneous Materials Using a Hybrid Model

2020 ◽  
Vol 26 (3) ◽  
pp. 484-496
Author(s):  
Yu Yuan ◽  
Hendrix Demers ◽  
Xianglong Wang ◽  
Raynald Gauvin
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Analytical Model ◽  
Hybrid Model ◽  
Three Dimensional ◽  
Heterogeneous Materials ◽  
X Ray ◽  
The Monte Carlo Method ◽  
Secondary Fluorescence ◽  
Good Agreement

AbstractIn electron probe microanalysis or scanning electron microscopy, the Monte Carlo method is widely used for modeling electron transport within specimens and calculating X-ray spectra. For an accurate simulation, the calculation of secondary fluorescence (SF) is necessary, especially for samples with complex geometries. In this study, we developed a program, using a hybrid model that combines the Monte Carlo simulation with an analytical model, to perform SF correction for three-dimensional (3D) heterogeneous materials. The Monte Carlo simulation is performed using MC X-ray, a Monte Carlo program, to obtain the 3D primary X-ray distribution, which becomes the input of the analytical model. The voxel-based calculation of MC X-ray enables the model to be applicable to arbitrary samples. We demonstrate the derivation of the analytical model in detail and present the 3D X-ray distributions for both primary and secondary fluorescence to illustrate the capability of our program. Examples for non-diffusion couples and spherical inclusions inside matrices are shown. The results of our program are compared with experimental data from references and with results from other Monte Carlo codes. They are found to be in good agreement.

CHANNELING ENERGY LOSS IN SILICON BY USING NUMERICAL AND EXPERIMENTAL METHODS

2011 ◽  
Vol 25 (28) ◽  
pp. 2171-2181 ◽  
Author(s):  
OMAR EL BOUNAGUI ◽  
HASSANE ERRAMLI
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Energy Loss ◽  
Single Crystal ◽  
Experimental Methods ◽  
Silicon Single Crystal ◽  
Experimental Results ◽  
Monte Carlo Simulation Program ◽  
Shed Light ◽  
Good Agreement

A Monte Carlo simulation program was developed to calculate the variations of the channeled to random electronic stopping powers of He + in an energy 4 MeV in silicon single crystal along the major 〈100〉, 〈110〉 and 〈111〉 axes. This paper discusses both simulation and experimental results that shed light on the contribution of these factors. Results obtained by our simulation are in good agreement with the experimental results.

Epitaxial growth of metals: Experimental results and Monte Carlo simulation

1989 ◽  
Vol 211-212 ◽  
pp. 797-803 ◽  
Author(s):  
J. Ferrón ◽  
J.M. Gallego ◽  
A. Cebollada ◽  
J.J. De Miguel ◽  
S. Ferrer
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Epitaxial Growth ◽  
Experimental Results

Monte Carlo Simulation of Characteristic Secondary Fluorescence in Electron Probe Microanalysis of Homogeneous Samples Using the Splitting Technique

2015 ◽  
Vol 21 (3) ◽  
pp. 753-758 ◽  
Author(s):  
Mauricio Petaccia ◽  
Silvina Segui ◽  
Gustavo Castellano
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Probe Microanalysis ◽  
Electron Probe ◽  
Variance Reduction ◽  
Fluorescence Enhancement ◽  
Radiation Transport ◽  
X Rays ◽  
X Ray ◽  
Secondary Fluorescence

AbstractElectron probe microanalysis (EPMA) is based on the comparison of characteristic intensities induced by monoenergetic electrons. When the electron beam ionizes inner atomic shells and these ionizations cause the emission of characteristic X-rays, secondary fluorescence can occur, originating from ionizations induced by X-ray photons produced by the primary electron interactions. As detectors are unable to distinguish the origin of these characteristic X-rays, Monte Carlo simulation of radiation transport becomes a determinant tool in the study of this fluorescence enhancement. In this work, characteristic secondary fluorescence enhancement in EPMA has been studied by using the splitting routines offered by PENELOPE 2008 as a variance reduction alternative. This approach is controlled by a single parameter NSPLIT, which represents the desired number of X-ray photon replicas. The dependence of the uncertainties associated with secondary intensities on NSPLIT was studied as a function of the accelerating voltage and the sample composition in a simple binary alloy in which this effect becomes relevant. The achieved efficiencies for the simulated secondary intensities bear a remarkable improvement when increasing the NSPLIT parameter; although in most cases an NSPLIT value of 100 is sufficient, some less likely enhancements may require stronger splitting in order to increase the efficiency associated with the simulation of secondary intensities.

scholarly journals Energy resolution of xenon proportional counters: Monte Carlo simulation and experimental results

1996 ◽  
Vol 43 (4) ◽  
pp. 2399-2405 ◽  
Author(s):  
P.J.B.M. Rachinhas ◽  
T.H.V.T. Dias ◽  
A.D. Stauffer ◽  
F.P. Santos ◽  
C.A.N. Conde
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Energy Resolution ◽  
Experimental Results ◽  
Proportional Counters
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