Time-resolved breast transillumination: Monte Carlo simulation and comparison with experimental results

1993 ◽  
Author(s):  
Emmanuel B. de Haller ◽  
Christian D. Depeursinge
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Experimental Results ◽  
Time Resolved

Monte Carlo Simulation of Performance of a Time-Resolved Range Telescope Using Selected Image Quality Assurance Phantoms

2011 ◽  
Vol 175 (1) ◽  
pp. 58-62
Author(s):  
Bin Han ◽  
X. George Xu ◽  
Matt Davidson ◽  
Bryan Bednarz ◽  
Gregory C. Sharp ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Quality Assurance ◽  
Image Quality ◽  
Time Resolved

scholarly journals Modeling Replenishment of Ultrathin Liquid Perfluoropolyether Z Films on Solid Surfaces Using Monte Carlo Simulation

2014 ◽  
Vol 2014 ◽  
pp. 1-9
Author(s):  
M. S. Mayeed ◽  
T. Kato
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Liquid Films ◽  
Experimental Results ◽  
Solid Surfaces ◽  
Carbon Surface ◽  
Radius Of Gyration ◽  
Constant Multiple ◽  
Molecular Weights ◽  
Lattice Polymer

Applying the reptation algorithm to a simplified perfluoropolyether Z off-lattice polymer model an NVT Monte Carlo simulation has been performed. Bulk condition has been simulated first to compare the average radius of gyration with the bulk experimental results. Then the model is tested for its ability to describe dynamics. After this, it is applied to observe the replenishment of nanoscale ultrathin liquid films on solid flat carbon surfaces. The replenishment rate for trenches of different widths (8, 12, and 16 nms for several molecular weights) between two films of perfluoropolyether Z from the Monte Carlo simulation is compared to that obtained solving the diffusion equation using the experimental diffusion coefficients of Ma et al. (1999), with room condition in both cases. Replenishment per Monte Carlo cycle seems to be a constant multiple of replenishment per second at least up to 2 nm replenished film thickness of the trenches over the carbon surface. Considerable good agreement has been achieved here between the experimental results and the dynamics of molecules using reptation moves in the ultrathin liquid films on solid surfaces.

CHANNELING ENERGY LOSS IN SILICON BY USING NUMERICAL AND EXPERIMENTAL METHODS

2011 ◽  
Vol 25 (28) ◽  
pp. 2171-2181 ◽  
Author(s):  
OMAR EL BOUNAGUI ◽  
HASSANE ERRAMLI
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Energy Loss ◽  
Single Crystal ◽  
Experimental Methods ◽  
Silicon Single Crystal ◽  
Experimental Results ◽  
Monte Carlo Simulation Program ◽  
Shed Light ◽  
Good Agreement

A Monte Carlo simulation program was developed to calculate the variations of the channeled to random electronic stopping powers of He + in an energy 4 MeV in silicon single crystal along the major 〈100〉, 〈110〉 and 〈111〉 axes. This paper discusses both simulation and experimental results that shed light on the contribution of these factors. Results obtained by our simulation are in good agreement with the experimental results.

Epitaxial growth of metals: Experimental results and Monte Carlo simulation

1989 ◽  
Vol 211-212 ◽  
pp. 797-803 ◽  
Author(s):  
J. Ferrón ◽  
J.M. Gallego ◽  
A. Cebollada ◽  
J.J. De Miguel ◽  
S. Ferrer
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Epitaxial Growth ◽  
Experimental Results
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