Effect of scintillator crystal geometry and surface finishing on depth of interaction resolution in PET detectors: Monte Carlo simulation and experimental results using silicon photomultipliers

2010 ◽  
Author(s):  
Sarah Cuddy ◽  
Alla Reznik ◽  
John A. Rowlands ◽  
Farhad Taghibakhsh
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Experimental Results ◽  
Surface Finishing ◽  
Depth Of Interaction ◽  
Silicon Photomultipliers ◽  
Pet Detectors ◽  
Scintillator Crystal

scholarly journals Modeling Replenishment of Ultrathin Liquid Perfluoropolyether Z Films on Solid Surfaces Using Monte Carlo Simulation

2014 ◽  
Vol 2014 ◽  
pp. 1-9
Author(s):  
M. S. Mayeed ◽  
T. Kato
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Liquid Films ◽  
Experimental Results ◽  
Solid Surfaces ◽  
Carbon Surface ◽  
Radius Of Gyration ◽  
Constant Multiple ◽  
Molecular Weights ◽  
Lattice Polymer

Applying the reptation algorithm to a simplified perfluoropolyether Z off-lattice polymer model an NVT Monte Carlo simulation has been performed. Bulk condition has been simulated first to compare the average radius of gyration with the bulk experimental results. Then the model is tested for its ability to describe dynamics. After this, it is applied to observe the replenishment of nanoscale ultrathin liquid films on solid flat carbon surfaces. The replenishment rate for trenches of different widths (8, 12, and 16 nms for several molecular weights) between two films of perfluoropolyether Z from the Monte Carlo simulation is compared to that obtained solving the diffusion equation using the experimental diffusion coefficients of Ma et al. (1999), with room condition in both cases. Replenishment per Monte Carlo cycle seems to be a constant multiple of replenishment per second at least up to 2 nm replenished film thickness of the trenches over the carbon surface. Considerable good agreement has been achieved here between the experimental results and the dynamics of molecules using reptation moves in the ultrathin liquid films on solid surfaces.

CHANNELING ENERGY LOSS IN SILICON BY USING NUMERICAL AND EXPERIMENTAL METHODS

2011 ◽  
Vol 25 (28) ◽  
pp. 2171-2181 ◽  
Author(s):  
OMAR EL BOUNAGUI ◽  
HASSANE ERRAMLI
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Energy Loss ◽  
Single Crystal ◽  
Experimental Methods ◽  
Silicon Single Crystal ◽  
Experimental Results ◽  
Monte Carlo Simulation Program ◽  
Shed Light ◽  
Good Agreement

A Monte Carlo simulation program was developed to calculate the variations of the channeled to random electronic stopping powers of He + in an energy 4 MeV in silicon single crystal along the major 〈100〉, 〈110〉 and 〈111〉 axes. This paper discusses both simulation and experimental results that shed light on the contribution of these factors. Results obtained by our simulation are in good agreement with the experimental results.

Epitaxial growth of metals: Experimental results and Monte Carlo simulation

1989 ◽  
Vol 211-212 ◽  
pp. 797-803 ◽  
Author(s):  
J. Ferrón ◽  
J.M. Gallego ◽  
A. Cebollada ◽  
J.J. De Miguel ◽  
S. Ferrer
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Epitaxial Growth ◽  
Experimental Results

scholarly journals Energy resolution of xenon proportional counters: Monte Carlo simulation and experimental results

1996 ◽  
Vol 43 (4) ◽  
pp. 2399-2405 ◽  
Author(s):  
P.J.B.M. Rachinhas ◽  
T.H.V.T. Dias ◽  
A.D. Stauffer ◽  
F.P. Santos ◽  
C.A.N. Conde
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Energy Resolution ◽  
Experimental Results ◽  
Proportional Counters

Epitaxial growth of metals: Experimental results and Monte Carlo simulation

1989 ◽  
Vol 211-212 ◽  
pp. A147
Author(s):  
J. Ferrón ◽  
J.M. Gallego ◽  
A. Cebollada ◽  
J.J. De Miguel ◽  
S. Ferrer
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Epitaxial Growth ◽  
Experimental Results
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