Hydrogen bubbles and formation of nanoporous silicon during electrochemical etching

2005 ◽  
Vol 37 (6) ◽  
pp. 555-561 ◽  
Author(s):  
Laxmikant Saraf ◽  
Donald R. Baer ◽  
Zheming Wang ◽  
James Young ◽  
Mark H. Engelhard ◽  
...  
Keyword(s):  
Electrochemical Etching ◽  
Nanoporous Silicon ◽  
Hydrogen Bubbles

Combined Manufacturing Process of Electrochemical-Etching and Electroplating on Nanoporous Silicon for its Metallization

2011 ◽  
Vol 194-196 ◽  
pp. 393-396
Author(s):  
Jia Chuan Lin ◽  
Meng Kai Hsu ◽  
Hsi Ting Hou ◽  
Jia Chi Pan
Keyword(s):  
Manufacturing Process ◽  
Electrochemical Etching ◽  
Current Control ◽  
Control Mode ◽  
Nanoporous Silicon ◽  
Combined Process ◽  
Turn On ◽  
Current Voltage ◽  
Electroplating Process

In this work, a combined process for simultaneously manufacturing nanoporous silicon (NPS) and its metallization was present. The key point is the utilization of adjust electrolyte of silver nitrate and the electroplating timing after the NPS etching process. The current-control mode was used to prepare NPS membrane and the obtained pore-size and pillar-depth were about 0.5 μm and 140 μm, respectively. For clarify the metallization quality of studied process, the semiconductor analyzer was utilized to measured current-voltage (IV) characteristic. Compared to NPS with conventional electroplating process, the contact properties of fabricated sample would be effectively improved by the proposed method. The obtained IV characteristic of sample with combined process shows a larger turn-on current about 277 times than other samples.

scholarly journals Detection of Acetonitrile and Chloroform Using Structures on the Base of Porous Silicon

2019 ◽  
pp. 89
Author(s):  
S.M. Manakov ◽  
M.K. Ibraimov ◽  
Ye. Sagidolda ◽  
Sh.A. Zhumatova ◽  
M.B. Darmenkulova
Keyword(s):  
Porous Silicon ◽  
Organic Compounds ◽  
Electrochemical Etching ◽  
Scanning Probe ◽  
Sensitive Material ◽  
Nanoporous Silicon ◽  
Planar Structures ◽  
Probe Microscope ◽  
Adsorption Phenomena

In this work porous silicon samples obtained by electrochemical etching were investigated. Using scanning probe microscope the morphology of porous silicon samples was studied. To determine the thickness of the porous layer and the pore diameter, micrographs were obtained using a scanning electron microscope. The dimensions of the nanocrystallites were determined from the Raman spectra. For the detection of vapors of organic compounds, planar structures were used. The results of the study confirmed the possibility of using nanoporous silicon as a sensitive material for the determination of acetonitrile and chloroform vapors. It is shown that the adsorption phenomena in porous silicon depend on its structure and morphology. It is established that the humidity of the air when detecting the vapors of organic compounds under investigation has a significant effect on the sensitivity. It is also shown that such structures can be used as instruments for measuring air humidity.

Nanoporous silicon membrane for fuel cells realized by electrochemical etching

2012 ◽  
Vol 258 (15) ◽  
pp. 5654-5658 ◽  
Author(s):  
M. Jaouadi ◽  
W. Dimassi ◽  
M. Gaidi ◽  
R. Chtourou ◽  
H. Ezzaouia
Keyword(s):  
Fuel Cells ◽  
Electrochemical Etching ◽  
Silicon Membrane ◽  
Nanoporous Silicon

scholarly journals Effect of Etching Parameter on Pore Size and Porosity of Electrochemically Formed Nanoporous Silicon

2007 ◽  
Vol 2007 ◽  
pp. 1-4 ◽  
Author(s):  
Pushpendra Kumar ◽  
Patrick Huber
Keyword(s):  
Pore Diameter ◽  
Crystalline Silicon ◽  
Electrochemical Etching ◽  
Sorption Isotherms ◽  
Electrochemical Process ◽  
Applied Current ◽  
Average Pore ◽  
Nanoporous Silicon ◽  
Applied Current Density ◽  
Precise Control

The most common fabrication technique of porous silicon (PS) is electrochemical etching of a crystalline silicon wafer in a hydrofluoric (HF) acid-based solution. The electrochemical process allows for precise control of the properties of PS such as thickness of the porous layer, porosity, and average pore diameter. The control of these properties of PS was shown to depend on the HF concentration in the used electrolyte, the applied current density, and the thickness of PS. The change in pore diameter, porosity, and specific surface area of PS was investigated by measuring nitrogen sorption isotherms.

Investigations of Nanostructure and Photoluminescence Properties of Nanoporous Silicon

2013 ◽  
Vol 748 ◽  
pp. 128-132
Author(s):  
Narin Atiwongsangthong
Keyword(s):  
Raman Spectroscopy ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Ambient Air ◽  
Constant Current ◽  
Photoluminescence Intensity ◽  
Photoluminescence Properties ◽  
Constant Current Density ◽  
Nanoporous Silicon ◽  
Fourier Transform Raman Spectroscopy

In this paper, the nanoporous silicon layer was formed by electrochemical etching of silicon wafer in hydrofluoric acid solution. The purpose of this research, the nanoporous silicon layer were investigated the nanostructure and photoluminescence properties. We report the investigation on nanostructure of nanoporous silicon by using SEM, the gravimetric and fourier transform Raman spectroscopy (FT-Raman) technique. It is found that increasing the constant current density between electrochemical etching have effect to increasing porosity of nanoporous silicon. And increasing porosity of nanoporous silicon is effect from decreasing average size of silicon crystallites in nanoporous silicon which can confirm with Raman spectroscopy. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during nanoporous silicon stored in various ambient gases such as air, nitrogen, oxigen and vacuum. From data of this experiment when nanoporous silicon were stored in ambient air for a long time, the photoluminescence intensity of nanoporous silicon will decrease. In addition, we found strongly decreasing in its photoluminescence intensity when nanoporous silicon were stored in ambient of oxygen which can confirm by using fourier transfrom infrared spectroscopy (FT-IR) technique.

The Microstructure and Characteristics of Luminescent Porous Silicon Film Prepared by the Physicochemical

2010 ◽  
Vol 29-32 ◽  
pp. 566-570
Author(s):  
Xiao Jun Wan ◽  
Hui Xia Jin
Keyword(s):  
Porous Silicon ◽  
Chemical Treatment ◽  
Electrochemical Etching ◽  
Silicon Film ◽  
Ultrasonic Waves ◽  
Silicon Films ◽  
Chemical Effect ◽  
Etching Solution ◽  
Hydrogen Bubbles ◽  
Effective Technology

The special physicochemical environment caused by sonic-vacating provides an important outlet for the preparation of highly efficient luminescent porous silicon films. Experimental results show that sonic—chemical treatment is an effective technology for the improvement of the microstructure of porous silicon, and the luminescent efficiency and stability thereof. Luminescent porous silicon films, prepared by ultrasonic—enhanced anode electrochemical etching, display better qualities than the samples prepared by conventional methods widely used at present. This ultrasonic—chemical effect roots in sonic—vacating, i.e. the generation, formation and rapid collapse of bubbles in the etching solution. In the process of the porous silicon being etched, the escape rate and caving-in of hydrogen bubbles in the pores is increased as a result of the work of the ultrasonic waves, which is helpful to the vertical etching of the pores.

Refractive Index Estimation of Nanoporous Silicon in Visible and Near-Infrared Spectrum Range

2013 ◽  
Vol 710 ◽  
pp. 8-12
Author(s):  
Wei Qiang ◽  
Jin An Xia ◽  
Chun Rui Wang ◽  
Xiao Yan Zhang
Keyword(s):  
Refractive Index ◽  
Infrared Spectrum ◽  
Optical Sensors ◽  
Communication Systems ◽  
Near Infrared ◽  
Electrochemical Etching ◽  
Calculated Data ◽  
Nanoporous Silicon ◽  
Spectrum Range ◽  
Near Infrared Spectrum

In this paper, we use Bruggeman model to calculate refractive index of nanoporous silicon, which was fabricated by electrochemical etching. The calculated result shows that the refractive index of the nanoporous silicon decreases linearly with increasing porosity and etching current density. In addition, the refractive index of nanoporous silicon was also measured by spectroscopic ellipsometry in the visible light spectrum range. The measured refractive index and extinction coefficient were in agreement with the calculated data, after being modified by the refractive index modified model of heavily doped silicon. In particular, we estimate the refractive index at the optical wavelengths in visible and near-infrared spectrum ranges, which may be widely used in various types of optical sensors and optoelectronic devices for optical communication systems.

Tunable luminescence of nanoporous silicon via electrochemical etching parameters

Optik ◽  
2016 ◽  
Vol 127 (7) ◽  
pp. 3513-3516 ◽  
Author(s):  
Vuong-Hung Pham ◽  
Nguyen Thi Ha Hanh ◽  
Phuong Dinh Tam
Keyword(s):  
Electrochemical Etching ◽  
Nanoporous Silicon ◽  
Etching Parameters
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