scholarly journals Detection of Acetonitrile and Chloroform Using Structures on the Base of Porous Silicon

2019 ◽  
pp. 89
Author(s):  
S.M. Manakov ◽  
M.K. Ibraimov ◽  
Ye. Sagidolda ◽  
Sh.A. Zhumatova ◽  
M.B. Darmenkulova
Keyword(s):  
Porous Silicon ◽  
Organic Compounds ◽  
Electrochemical Etching ◽  
Scanning Probe ◽  
Sensitive Material ◽  
Nanoporous Silicon ◽  
Planar Structures ◽  
Probe Microscope ◽  
Adsorption Phenomena

In this work porous silicon samples obtained by electrochemical etching were investigated. Using scanning probe microscope the morphology of porous silicon samples was studied. To determine the thickness of the porous layer and the pore diameter, micrographs were obtained using a scanning electron microscope. The dimensions of the nanocrystallites were determined from the Raman spectra. For the detection of vapors of organic compounds, planar structures were used. The results of the study confirmed the possibility of using nanoporous silicon as a sensitive material for the determination of acetonitrile and chloroform vapors. It is shown that the adsorption phenomena in porous silicon depend on its structure and morphology. It is established that the humidity of the air when detecting the vapors of organic compounds under investigation has a significant effect on the sensitivity. It is also shown that such structures can be used as instruments for measuring air humidity.

Scanning-probe microscope analysis of optical thin films: A new analytical tool in a manufacturing environment

1994 ◽  
Vol 52 ◽  
pp. 1068-1069
Author(s):  
S. P. Sapers ◽  
R. Clark ◽  
P. Somerville
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Control ◽  
Scanning Probe Microscope ◽  
Scanning Probe ◽  
List Type ◽  
Manufacturing Environment ◽  
Physical Measurements ◽  
Probe Microscope

OCLI is a leading manufacturer of thin films for optical and thermal control applications. The determination of thin film and substrate topography can be a powerful way to obtain information for deposition process design and control, and about the final thin film device properties. At OCLI we use a scanning probe microscope (SPM) in the analytical lab to obtain qualitative and quantitative data about thin film and substrate surfaces for applications in production and research and development. This manufacturing environment requires a rapid response, and a large degree of flexibility, which poses special challenges for this emerging technology. The types of information the SPM provides can be broken into three categories:(1)Imaging of surface topography for visualization purposes, especially for samples that are not SEM compatible due to size or material constraints;(2)Examination of sample surface features to make physical measurements such as surface roughness, lateral feature spacing, grain size, and surface area;(3)Determination of physical properties such as surface compliance, i.e. “hardness”, surface frictional forces, surface electrical properties.

scholarly journals Морфология, структурные и оптические свойства наноструктур кремния, полученные в растворе, содержащем гексафторосиликат водорода H-=SUB=-2-=/SUB=-(SiF-=SUB=-6-=/SUB=-)

2020 ◽  
Vol 128 (9) ◽  
pp. 1375
Author(s):  
Ш.А. Жуматова ◽  
С.М. Манаков ◽  
Е. Сагидолда ◽  
М.Б. Дарменкулова ◽  
Р.М. Азамат ◽  
...  
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Ethyl Alcohol ◽  
Scanning Probe Microscopy ◽  
Electrochemical Etching ◽  
Scanning Probe ◽  
Silicon Nanostructures ◽  
Structural And Optical Properties ◽  
Boron Doped ◽  
P Type

Boron doped porous silicon with the observed photoluminescence with a crystallographic orientation of (100), which was fabricated based on a p-type silicon substrate using electrochemical etching in a solution containing hexafluorosilicic acid and ethyl alcohol was studied. A comparative analysis of the morphology, structural and optical properties of silicon nanostructures obtained in a solution containing H2(SiF6) and ethanol and samples obtained in a solution containing HF and ethanol was performed. Morphology, structural and optical properties were studied using scanning probe microscopy and spectrophotometry. It was shown that samples of porous silicon obtained in a solution containing H2(SiF6) and ethanol are characterized by improved optical properties, in particular, they exhibit more intense photoluminescence compared to samples obtained in solutions with HF and ethyl alcohol.

Measuring the length of objects on scanning probe microscope images using curvature detectors

2021 ◽  
pp. 21-26
Author(s):  
Pavel V. Gulyaev
Keyword(s):  
Automatic Measurement ◽  
Surface Curvature ◽  
Scanning Probe ◽  
Test Image ◽  
Halftone Image ◽  
Geometric Figures ◽  
Curvature Analysis ◽  
Measurement Tools ◽  
Probe Microscope

The article is devoted to the automatic measurement of objects longitudinal dimensions on images obtained by probe microscopy. The solution of this problem can be relevant for quality control of microelectronics, nanotechnics products and materials. Existing tools for objects length measuring are compared by means of test image containing geometric figures with known dimensions. The advantages of software surface curvature detectors, intended for objects lengths measuring directly on a halftone image by forming the skeleton of an object with a surface curvature detector, are shown. A two-dimensional “Circle” detector, based on the curvature analysis of raster images line and column profilograms, was used for the measuring. The curvature was estimated based on the area of the figure bounded by the profilogram at a predefined interval. Features of measuring the length of objects using curvature maxima are considered. It is shown that the curvature detector allows to more accurately determine the lengths of objects with overlapping contours and a significant brightness range. Algorithms of the detector operation, formation of the object skeleton and determination of its length are described. The results of investigation confirming the performance of the presented algorithms are presented. Comparative analysis with existing length measurement tools, performed on magnetic disk domains and nanopolymer fibers images, showed a more correct detector operation in sceletonization of object and measuring its length.

Site-specific formation of nanoporous silicon on micro-fabricated silicon surfaces

2004 ◽  
Vol 829 ◽  
Author(s):  
Fung Suong Ou ◽  
Laxmikant V. Saraf ◽  
Donald R. Baer
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Electrochemical Etching ◽  
Early Stage ◽  
Silicon Surfaces ◽  
Biological Applications ◽  
Nanoporous Silicon ◽  
Silicon Area ◽  
Site Specific ◽  
Experimental Procedure

ABSTRACTWe demonstrated an ability to control the location of the porous silicon formation during electro-chemical etching by the introduction of micro- fabricated defects. This ability may open new doors for chemical and biological applications of porous silicon. In this paper, we have focused on the experimental procedure used to form this site-specific porous silicon area on micro- fabricated silicon surface. We also compared our results with work carried out by Saraf et al[1] during the early stage of porous silicon formation in conventional electrochemical etching.

DETERMINATION OF NANOMETER-SCALE SIZES IN n+-TYPE POROUS SILICON BY THE USE OF X-RAY AND RAMAN SPECTROSCOPIES

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1769-1772
Author(s):  
A. RAMÍREZ-PORRAS
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Uv Light ◽  
Electrochemical Etching ◽  
Nanometer Scale ◽  
X Ray ◽  
Recombination Processes ◽  
Phosphorus Doped ◽  
Confinement Model

Porous silicon layers were obtained by electrochemical etching on (111) plane surfaces of crystalline phosphorus-doped silicon in the presence of hydrofluoric acid. The photoluminescence of this kind of layers when illuminated with UV light is possibly explained by the quantum confinement model (QCM), which states the presence of nanometer-scale crystallites that enlarge the semiconductor band gap up to optical photon energies when the band-to-band recombination processes take place. In this study, the size determination of those proposed structures was performed by X-ray diffractiometry and by Raman spectroscopy. The obtained results suggest a consistency between the experimental work and the QCM.

A Study of the Photoelectric Effect Caused by a Laser Beam Used in a Beam Bounce Technique in a C-AFM System

2008 ◽  
Author(s):  
Hung-Sung Lin ◽  
Mong-Sheng Wu
Keyword(s):  
Laser Beam ◽  
Failure Analysis ◽  
Atomic Force Microscope ◽  
Photoelectric Effect ◽  
Scanning Probe ◽  
Nanometer Scale ◽  
Electrical Characteristics ◽  
Atomic Force ◽  
Probe Microscope ◽  
Probe Head

Abstract The use of a scanning probe microscope (SPM), such as a conductive atomic force microscope (C-AFM) has been widely reported as a method of failure analysis in nanometer scale science and technology [1-6]. A beam bounce technique is usually used to enable the probe head to measure extremely small movements of the cantilever as it is moved across the surface of the sample. However, the laser beam used for a beam bounce also gives rise to the photoelectric effect while we are measuring the electrical characteristics of a device, such as a pn junction. In this paper, the photocurrent for a device caused by photon illumination was quantitatively evaluated. In addition, this paper also presents an example of an application of the C-AFM as a tool for the failure analysis of trap defects by taking advantage of the photoelectric effect.

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