Large-signal and small-signal electronic equivalent circuits for a field electron emitter

2004 ◽  
Vol 36 (56) ◽  
pp. 402-406
Author(s):  
M. J. Hagmann ◽  
M. S. Mousa ◽  
M. Brugat ◽  
E. P. Sheshin ◽  
A. S. Baturin
Keyword(s):  
Equivalent Circuits ◽  
Small Signal ◽  
Large Signal ◽  
Electron Emitter ◽  
Field Electron

Equivalent circuits for averaged description of DC-DC switch-mode power converters based on separation of variables approach

2013 ◽  
Vol 61 (3) ◽  
pp. 711-723 ◽  
Author(s):  
W. Janke
Keyword(s):  
Power Converters ◽  
Circuit Simulation ◽  
Separation Of Variables ◽  
Equivalent Circuits ◽  
Small Signal ◽  
Large Signal ◽  
Dc Power ◽  
Measurement Results ◽  
Switch Mode ◽  
Averaged Models

Abstract Large-signal and small-signal averaged models of basic switch-mode DC-DC power converters: BUCK (step-down) and BOOST (step-up) are presented. Models are derived with the separation of variables approach and have the form of equivalent circuits, suitable for a circuit simulation. Apart from equivalent circuits, small-signal transmittances of converters for CCM and DCM modes are discussed. Parasitic resistances of all components of converters are taken into account. A few examples of simulations and measurement results of selected converter characteristics are also presented. It is shown, that neglecting parasitic resistances (often met in works of other authors) may lead to serious errors in an averaged description of converters.

MESFET large-signal model based on small-signal measurements for time-domain CAD

1988 ◽  
Vol 24 (15) ◽  
pp. 973 ◽  
Author(s):  
A. Ouslimani ◽  
G. Vernet ◽  
J.C. Henaux ◽  
P. Crozat ◽  
R. Adde
Keyword(s):  
Time Domain ◽  
Small Signal ◽  
Large Signal ◽  
Signal Model ◽  
Model Based

Conducting polymer based hybrid structure as transparent and flexible field electron emitter

2013 ◽  
Vol 7 (7) ◽  
pp. 489-492 ◽  
Author(s):  
Debasish Ghosh ◽  
Pradip Ghosh ◽  
Golap Kalita ◽  
Takuto Noda ◽  
Chisato Takahashi ◽  
...  
Keyword(s):  
Conducting Polymer ◽  
Hybrid Structure ◽  
Electron Emitter ◽  
Field Electron

Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers

2018 ◽  
Vol 10 (9) ◽  
pp. 999-1010 ◽  
Author(s):  
Michele Squartecchia ◽  
Tom K. Johansen ◽  
Jean-Yves Dupuy ◽  
Virginio Midili ◽  
Virginie Nodjiadjim ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Output Power ◽  
Heterojunction Bipolar Transistors ◽  
Power Amplifiers ◽  
Small Signal Gain ◽  
Small Signal ◽  
Large Signal ◽  
Signal Gain ◽  
Power Added Efficiency ◽  
Saturated Output Power

AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.

Large Signal and Small Signal Building Blocks for Cellular Infrastructure

2017 ◽  
pp. 169-187
Author(s):  
Mustafa Acar ◽  
Jos Bergervoet ◽  
Mark van der Heijden ◽  
Domine Leenaerts ◽  
Stefan Drude
Keyword(s):  
Building Blocks ◽  
Small Signal ◽  
Large Signal

scholarly journals Modeling and Control of Double-Sided LCC Compensation Topology with Semi-Bridgeless Active Rectifier for Inductive Power Transfer System

Energies ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3921
Author(s):  
Cha ◽  
Kim ◽  
Park ◽  
Choi
Keyword(s):  
Steady State ◽  
Equivalent Circuit ◽  
Small Signal ◽  
Power Transfer ◽  
Large Signal ◽  
Signal Model ◽  
Worst Case ◽  
Inductive Power Transfer ◽  
Active Rectifier ◽  
Inductive Power

This paper proposes the modeling and design of a controller for an inductive power transfer (IPT) system with a semi-bridgeless active rectifier (S-BAR). This system consists of a double-sided Inductor-Capacitor-Capacitor (LCC) compensation network and an S-BAR, and maintains a constant output voltage under load variation through the operation of the rectifier switches. Accurate modeling is essential to design a controller with good performance. However, most of the researches on S-BAR have focused on the control scheme for the rectifier switches and steady-state analysis. Therefore, modeling based on the extended describing function is proposed for an accurate dynamic analysis of an IPT system with an S-BAR. Detailed mathematical analyses of the large-signal model, steady-state operating solution, and small-signal model are provided. Nonlinear large-signal equivalent circuit and linearized small-signal equivalent circuit are presented for intuitive understanding. In addition, worst case condition is selected under various load conditions and a controller design process is provided. To demonstrate the effectiveness of the proposed modeling, experimental results using a 100 W prototype are presented.

Field electron emitter based on a cesium-gold compound film

2006 ◽  
Vol 32 (7) ◽  
pp. 579-581 ◽  
Author(s):  
D. P. Bernatskii ◽  
V. G. Pavlov
Keyword(s):  
Gold Compound ◽  
Electron Emitter ◽  
Field Electron
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