Large Signal and Small Signal Building Blocks for Cellular Infrastructure

2017 ◽  
pp. 169-187
Author(s):  
Mustafa Acar ◽  
Jos Bergervoet ◽  
Mark van der Heijden ◽  
Domine Leenaerts ◽  
Stefan Drude
Keyword(s):  
Building Blocks ◽  
Small Signal ◽  
Large Signal

MESFET large-signal model based on small-signal measurements for time-domain CAD

1988 ◽  
Vol 24 (15) ◽  
pp. 973 ◽  
Author(s):  
A. Ouslimani ◽  
G. Vernet ◽  
J.C. Henaux ◽  
P. Crozat ◽  
R. Adde
Keyword(s):  
Time Domain ◽  
Small Signal ◽  
Large Signal ◽  
Signal Model ◽  
Model Based

Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers

2018 ◽  
Vol 10 (9) ◽  
pp. 999-1010 ◽  
Author(s):  
Michele Squartecchia ◽  
Tom K. Johansen ◽  
Jean-Yves Dupuy ◽  
Virginio Midili ◽  
Virginie Nodjiadjim ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Output Power ◽  
Heterojunction Bipolar Transistors ◽  
Power Amplifiers ◽  
Small Signal Gain ◽  
Small Signal ◽  
Large Signal ◽  
Signal Gain ◽  
Power Added Efficiency ◽  
Saturated Output Power

AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.

scholarly journals Modeling and Control of Double-Sided LCC Compensation Topology with Semi-Bridgeless Active Rectifier for Inductive Power Transfer System

Energies ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3921
Author(s):  
Cha ◽  
Kim ◽  
Park ◽  
Choi
Keyword(s):  
Steady State ◽  
Equivalent Circuit ◽  
Small Signal ◽  
Power Transfer ◽  
Large Signal ◽  
Signal Model ◽  
Worst Case ◽  
Inductive Power Transfer ◽  
Active Rectifier ◽  
Inductive Power

This paper proposes the modeling and design of a controller for an inductive power transfer (IPT) system with a semi-bridgeless active rectifier (S-BAR). This system consists of a double-sided Inductor-Capacitor-Capacitor (LCC) compensation network and an S-BAR, and maintains a constant output voltage under load variation through the operation of the rectifier switches. Accurate modeling is essential to design a controller with good performance. However, most of the researches on S-BAR have focused on the control scheme for the rectifier switches and steady-state analysis. Therefore, modeling based on the extended describing function is proposed for an accurate dynamic analysis of an IPT system with an S-BAR. Detailed mathematical analyses of the large-signal model, steady-state operating solution, and small-signal model are provided. Nonlinear large-signal equivalent circuit and linearized small-signal equivalent circuit are presented for intuitive understanding. In addition, worst case condition is selected under various load conditions and a controller design process is provided. To demonstrate the effectiveness of the proposed modeling, experimental results using a 100 W prototype are presented.

scholarly journals A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs pHEMTs

Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 266
Author(s):  
Ruirui Dang ◽  
Lijie Yang ◽  
Zhihao Lv ◽  
Chunyi Song ◽  
Zhiwei Xu
Keyword(s):  
Parameter Extraction ◽  
New Method ◽  
Small Signal ◽  
Gate Bias ◽  
Large Signal ◽  
S Parameter ◽  
Proposed Model ◽  
Measurement Results ◽  
Parasitic Parameter ◽  
Signal Models

Accurate large signal GaAs pHEMT models are essential for devices’ performance analysis and microwave circuit design. This, in turn, mandates precise small signal models. However, the accuracy of small signal models strongly depends on reliable parasitic parameter extraction of GaAs pHEMT, which also greatly influences the extraction of intrinsic elements. Specifically, the parasitic source and drain resistances, R s and R d , are gate bias-dependent, due to the two-dimensional charge variations. In this paper, we propose a new method to extract R s and R d directly from S-parameter measurements of the device under test (DUT), which save excessive measurements and complicated parameter extraction. We have validated the proposed method in both simulation and on-wafer measurement, which achieves better accuracy than the existing state-of-the-art in a frequency range of 0.5–40 GHz. Furthermore, we develop a GaAs pHEMT power amplifier (PA) to further validate the developed model. The measurement results of the PA at 9–15 GHz agree with the simulation results using the proposed model.

scholarly journals Unusual Response of Thin LiTaO3 Films to Intense Microwave Pulses

Materials ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 3588
Author(s):  
Haojia Chen ◽  
Qiong Gao ◽  
Baoliang Qian ◽  
Lishan Zhao
Keyword(s):  
Nonlinear Behaviour ◽  
Small Signal ◽  
Large Signal ◽  
Signal Model ◽  
Small Signal Model ◽  
Wide Range ◽  
Microwave Pulses ◽  
Intense Fields ◽  
Voltage Signal ◽  
Wave Sensors

Fundamentally different responses of a LiTaO 3 thin film detector are observed when it is subjected to short microwave pulses as the pulse intensity is altered over a wide range. We start from weak microwave pulses which lead to only trivial pyroelectric peak response. However, when the microwave pulses become intense, the normally expected pyroelectric signal seems to be suppressed and the sign of the voltage signal can even be completely changed. Analysis indicates that while the traditional pyroelectric model, which is a linear model and works fine for our data in the small regime, it does not work anymore in the large signal regime. Since the small-signal model is the key foundation of electromagnetic-wave sensors based on pyroelectric effects, such as pyroelectric infrared detecters, the observation in this work suggests that one should be cautious when using these devices in intense fields. In addition, the evolution of detector signal with respect to excitation strength suggests that the main polarisation process is changed in the large signal regime. This is of fundamental importance to the understanding on how crystalline solids interact with intense microwaves. Possible causes of the nonlinear behaviour is discussed.

Large-Signal Investigation of Cold and Hot Matched Coupled-Cavity Traveling-Wave Tubes

Frequenz ◽  
2014 ◽  
Vol 0 (0) ◽  
Author(s):  
Sascha Meyne ◽  
Jean-François David ◽  
Arne F. Jacob
Keyword(s):  
Traveling Wave ◽  
Characteristic Impedance ◽  
Matching Condition ◽  
Wave System ◽  
Small Signal ◽  
Large Signal ◽  
Beam Wave ◽  
Signal Approach ◽  
Traveling Wave Tubes ◽  
Coupled Cavity

AbstractThe implications of different matching conditions for coupled-cavity traveling-wave tubes are considered. Using a small-signal approach the characteristic impedance for the coupled (hot) beam-wave system is derived. It is taken as reference impedance to model ideal transformers and severs. This matching condition is compared to the standard cold match and both cases are analyzed using a large-signal interaction tool. The implications on input reflection and output gain are discussed.

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