Surface composition changes in GaN induced by argon ion bombardment

2002 ◽  
Vol 34 (1) ◽  
pp. 253-256 ◽  
Author(s):  
J. Kova? ◽  
A. Zalar
Keyword(s):  
Surface Composition ◽  
Ion Bombardment ◽  
Argon Ion Bombardment ◽  
Argon Ion ◽  
Composition Changes

XPS study of the surface composition modification of nc-TiC/C nanocomposite films under in situ argon ion bombardment

2011 ◽  
Vol 519 (12) ◽  
pp. 3982-3985 ◽  
Author(s):  
A.A. El Mel ◽  
B. Angleraud ◽  
E. Gautron ◽  
A. Granier ◽  
P.Y. Tessier
Keyword(s):  
Surface Composition ◽  
Ion Bombardment ◽  
Nanocomposite Films ◽  
Composition Modification ◽  
Argon Ion Bombardment ◽  
Xps Study ◽  
Argon Ion

Study of the changes in the silicide surface composition under argon ion bombardment

1991 ◽  
Vol 251-252 ◽  
pp. 159-164 ◽  
Author(s):  
V.I. Zaporozchenko ◽  
S.S. Vojtusik ◽  
M.G. Stepanova ◽  
A.I. Zagorenko
Keyword(s):  
Surface Composition ◽  
Ion Bombardment ◽  
Argon Ion Bombardment ◽  
Argon Ion

Study of the changes in the silicide surface composition under argon ion bombardment

1991 ◽  
Vol 251-252 ◽  
pp. A316
Author(s):  
V.I. Zaporozchenko ◽  
S.S. Vojtusik ◽  
M.G. Stepanova ◽  
A.I. Zagorenko
Keyword(s):  
Surface Composition ◽  
Ion Bombardment ◽  
Argon Ion Bombardment ◽  
Argon Ion

Preferential Sputtering of Ni3Al Single Crystals Studied Using Atom-Probe Field-Ion Microscopy and XPS

1981 ◽  
Vol 39 ◽  
pp. 16-17
Author(s):  
M.P. Thomas ◽  
A.R. Waugh ◽  
M.J. Southon ◽  
Brian Ralph
Keyword(s):  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Depth Profiling ◽  
Analytical Techniques ◽  
Atom Probe ◽  
Probe Field ◽  
Preferential Sputtering ◽  
Argon Ion Bombardment ◽  
Argon Ion

It is well known that ion-induced sputtering from numerous multicomponent targets results in marked changes in surface composition (1). Preferential removal of one component results in surface enrichment in the less easily removed species. In this investigation, a time-of-flight atom-probe field-ion microscope A.P. together with X-ray photoelectron spectroscopy XPS have been used to monitor alterations in surface composition of Ni3Al single crystals under argon ion bombardment. The A.P. has been chosen for this investigation because of its ability using field evaporation to depth profile through a sputtered surface without the need for further ion sputtering. Incident ion energy and ion dose have been selected to reflect conditions widely used in surface analytical techniques for cleaning and depth-profiling of samples, typically 3keV and 1018 - 1020 ion m-2.

Influence of argon ion bombardment on the oxidation of nickel surfaces

1996 ◽  
Vol 369 (1-3) ◽  
pp. 217-230 ◽  
Author(s):  
Juan Carlos de Jesús ◽  
Pedro Pereira ◽  
José Carrazza ◽  
Francisco Zaera
Keyword(s):  
Ion Bombardment ◽  
Argon Ion Bombardment ◽  
Argon Ion

Argon incorporation and silicon carbide formation during low energy argon‐ion bombardment of Si(100)

1996 ◽  
Vol 79 (6) ◽  
pp. 2934-2941 ◽  
Author(s):  
J. S. Pan ◽  
A. T. S. Wee ◽  
C. H. A. Huan ◽  
H. S. Tan ◽  
K. L. Tan
Keyword(s):  
Silicon Carbide ◽  
Ion Bombardment ◽  
Low Energy ◽  
Carbide Formation ◽  
Argon Ion Bombardment ◽  
Argon Ion

scholarly journals Effect of argon ion bombardment on amorphous silicon carbonitride films

2014 ◽  
Vol 480 ◽  
pp. 012021
Author(s):  
R G S Batocki ◽  
R P Mota ◽  
R Y Honda ◽  
D C R Santos
Keyword(s):  
Amorphous Silicon ◽  
Ion Bombardment ◽  
Silicon Carbonitride ◽  
Argon Ion Bombardment ◽  
Argon Ion
Sign in / Sign up

Export Citation Format

Share Document