4.3: Sense the Threshold Voltage Difference of AMOLED Displays at High‐speed

2021 ◽  
Vol 52 (S2) ◽  
pp. 79-84
Author(s):  
Wei Dou ◽  
Jing Xu ◽  
Yuchao Zeng ◽  
Jason Hwang
Keyword(s):  
Threshold Voltage ◽  
High Speed ◽  
Voltage Difference

scholarly journals A 3-Transistor Low Power Rectifier for Wideband RF Energy Harvesting with a Threshold Voltage Compensation Technique using 45 nm Technology

2020 ◽  
Vol 19 ◽  
Keyword(s):  
Energy Harvesting ◽  
Threshold Voltage ◽  
High Frequency ◽  
High Speed ◽  
Signal Power ◽  
Green Communication ◽  
Rf Energy Harvesting ◽  
Voltage Compensation ◽  
Compensation Technique ◽  
Rf Energy

With the advent of modern wireless communication technology and increasing requirement of high speed network, network life-time is becoming a major area of concern. The need of network power management is gaining attention with the high data network in place and is making a paradigm shift towards green communication. Hence embedding the RF energy harvesting (EH) capability in a wireless network is becoming inevitable. To make RF EH a reality a high frequency rectifier is indeed indispensable along with other circuits in the system. The RF energy needs to be harvested from the available sources in the ambience. It is also seen that the current generation of RF sources radiates at a very low signal power. So, to successfully convert and store this energy, the rectifier must not only be able to provide a sufficiently higher percentage conversion ratio (PCE) but also be able to cater it at a lower range of signal power. This paper presents the design and analysis of a simplified 3-transistor high frequency rectifier. A threshold voltage compensation technique is also incorporated and it achieves a PCE upto 85% at -2dBm in its single stage implementation. This is observed to be one of the highest in-class efficiency as compared to recently reported designs. From the frequency response it is seen to exhibit wide band performance spanning almost all popular wireless bands. The dynamic power dissipation (DPD) is calculated to be 6.25pW at -2dB, whereas the leakage power (LP) is observed to be zero.

A study of the light emitted from the initial stages of a spark discharge

1964 ◽  
Vol 278 (1373) ◽  
pp. 168-187 ◽  
Keyword(s):  
Threshold Voltage ◽  
High Speed ◽  
Homogeneous Field ◽  
Electrode Gap ◽  
Diffuse Discharge ◽  
Glow Discharges ◽  
Field Electrode ◽  
Atomic Lines ◽  
Chamber Studies ◽  
Spark Channel

Measurements have been made, by means of submicrosecond impulses, on the threshold voltage at which the first visible discharge occurs in a homogeneous field electrode gap. Various gases have been used at different values of gap and gas pressure. In most gases there is some indication of a change in the form of the initial discharge as the gap is varied. At a certain value of electrode gap, depending upon the impulse length and gap pressure, there is a change in slope of the threshold voltage-gap curve. Above this point the discharges are generally filamentary whereas at smaller gaps they are broad and diffuse. In air, nitrogen and oxygen the filamentary discharges are often constricted at a point in the gap. The position of this constriction depends on the impulse and gap length. It is suggested that the filamentary discharges correspond to a streamer type of discharge and are similar to the ones observed in the previous cloud chamber studies. The broad diffuse discharge which occurs at smaller gaps is probably the Townsend type of discharge In argon and hydrogen the evidence for the existence of two breakdown mechanisms is not very strong. High-speed streak photography has revealed that the filamentary glow discharges in air appear to grow towards the constriction. A spark channel then begins to form at the constriction and grows towards the electrodes. Spectroscopic examination of the various types of discharge shows the prominent second positive N 2 bands for discharges in air and nitrogen but with a continuum, N + 2 bands and atomic lines in the constriction. An estimate of the peak electron energy has been made for various discharges in air and nitrogen and found to be about 14eV.

A Modified Architecture for Radix-4 Booth Multiplier with Adaptive Hold Logic

2016 ◽  
Vol 4 (1) ◽  
pp. 01-05
Author(s):  
S Suvarna ◽  
K Rajesh ◽  
T Radhu
Keyword(s):  
Threshold Voltage ◽  
High Speed ◽  
Negative Bias ◽  
Positive Bias ◽  
Negative Bias Temperature Instability ◽  
Discrete Cosine Transforms ◽  
Temperature Instability ◽  
Booth Multiplier ◽  
Bias Temperature Instability ◽  
Digital Multipliers

High speed digital multipliers are most efficiently used in many applications such as Fourier transform, discrete cosine transforms, and digital filtering. The throughput of the multipliers is based on speed of the multiplier, and then the entire performance of the circuit depends on it. The pMOS transistor in negative bias cause negative bias temperature instability (NBTI), which increases the threshold voltage of the transistor and reduces the multiplier speed. Similarly, the nMOS transistor in positive bias cause positive bias temperature instability (PBTI).These effects reduce the transistor speed and the system may fail due to timing violations. So here a new multiplier was designed with novel adaptive hold logic (AHL) using Radix-4 Modified Booth Multiplier. By using Radix-4 Modified Booth Encoding (MBE), we can reduce the number of partial products by half. Modified booth multiplier helps to provide higher throughput with low power consumption. This can adjust the AHL circuit to reduce the performance degradation. The expected result will be reduce threshold voltage, increase throughput and speed and also reduce power. This modified multiplier design is coded by Verilog and simulated using Xilinx ISE 12.1 and implemented in Spartan 3E FPGA kit.

Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET

2017 ◽  
Vol 897 ◽  
pp. 549-552 ◽  
Author(s):  
Mitsuo Okamoto ◽  
Mitsuru Sometani ◽  
Shinsuke Harada ◽  
Hiroshi Yano ◽  
Hajime Okumura
Keyword(s):  
Threshold Voltage ◽  
High Speed ◽  
Stress Measurement ◽  
Measurement Instrument ◽  
Relaxation Effect ◽  
Gate Bias ◽  
Bias Stress ◽  
Speed Measurement ◽  
Gate Bias Stress

The threshold voltage (Vth) instability of 4H-SiC MOSFETs was investigated using high-speed IV measurement instrument. DC stress measurement of wide time span ranging from 10-6 to 103 s without relaxation effect was conducted. The high-speed measurement allowed of dynamic ΔVth measurement under pulsed AC gate bias stress. We investigated effects of NO POA in gate oxidation process on the Vth instabilities.

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