scholarly journals P‐1.15: Short time negative gate voltage pulse to eliminate persistent photoconductivity in Amorphous InZnO thin film transistors

2021 ◽  
Vol 52 (S1) ◽  
pp. 452-452
Author(s):  
Changhui Fan ◽  
Yu Xin ◽  
Ludong Qin ◽  
Xiaoliang Zhou ◽  
Shengdong Zhang
Keyword(s):  
Thin Film ◽  
Gate Voltage ◽  
Voltage Pulse ◽  
Thin Film Transistors ◽  
Persistent Photoconductivity ◽  
Short Time ◽  
Negative Gate Voltage

Roles of Gate Voltage and Stress Power in Self-Heating Degradation of a-InGaZnO Thin-Film Transistors

2021 ◽  
pp. 1-5
Author(s):  
Mengjun Du ◽  
Jinfeng Zhao ◽  
Dongli Zhang ◽  
Huaisheng Wang ◽  
Qi Shan ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Voltage ◽  
Thin Film Transistors ◽  
Self Heating

Persistent photoconductivity in Hf–In–Zn–O thin film transistors

2010 ◽  
Vol 97 (14) ◽  
pp. 143510 ◽  
Author(s):  
Khashayar Ghaffarzadeh ◽  
Arokia Nathan ◽  
John Robertson ◽  
Sangwook Kim ◽  
Sanghun Jeon ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Persistent Photoconductivity

Fabrication of Transparent Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Operation

2005 ◽  
Vol 902 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Masaru Senoo ◽  
Etsu Shin
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Gate Voltage ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Quartz Substrate ◽  
Drain Current ◽  
Optical Transmittance ◽  
Gate Insulator ◽  
Current Drain

AbstractWe demonstrate transparent thin film transistors (TFTs) with nonvolatile memory operation using Bi4-xLaxTi3O12 (BLT) as a gate insulator and indium tin oxide (ITO) as a channel. ITO is also used for the gate, source and drain electrodes. Drain current-drain voltage (ID-VD) characteristics of transparent ITO/BLT ferroelectric-gate TFTs exhibit excellent n-channel transistor operations. On current of 0.35 mA was obtained when the applied gate voltage is 6V. On the other hand, the off current of the device is as low as 10-10A, which indicates that the ITO channel is sufficiently depleted by the ferroelectric polarization. In addition, drain current-gate voltage (ID-VG) characteristics demonstrate clear counterclockwise hysteresis loop due to the ferroelectric gate insulator. Optical transmittance of the fabricated device is greater than 60% including the quartz substrate.

scholarly journals Gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors with an asymmetric graphene electrode

AIP Advances ◽  
2015 ◽  
Vol 5 (9) ◽  
pp. 097141 ◽  
Author(s):  
Joonwoo Kim ◽  
Sung Myung ◽  
Hee-Yeon Noh ◽  
Soon Moon Jeong ◽  
Jaewook Jeong
Keyword(s):  
Thin Film ◽  
Gate Voltage ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Current Stress ◽  
Graphene Electrode

Influence of Nitrogen Content on Persistent Photoconductivity in Zinc Oxynitride Thin Film Transistors

2020 ◽  
Vol 41 (4) ◽  
pp. 561-564 ◽  
Author(s):  
Jun Tae Jang ◽  
Hyoung-Do Kim ◽  
Dong Myong Kim ◽  
Sung-Jin Choi ◽  
Hyun-Suk Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Nitrogen Content ◽  
Thin Film Transistors ◽  
Persistent Photoconductivity
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