Fabrication and characterization of Zinc Telluride (ZnTe) thin films grown on glass substrates

2019 ◽  
Vol 560 ◽  
pp. 204-207 ◽  
Author(s):  
Khalid Mehmood Ur Rehman ◽  
Xiansong Liu ◽  
Muhammad Riaz ◽  
Yujie Yang ◽  
Shuangjiu Feng ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Telluride ◽  
Glass Substrates ◽  
Fabrication And Characterization ◽  
Znte Thin Films

Fabrication and Characterization of ALD-grown ZrO2:Ge Thin Films on Si(1 0 0) using CpZr(NMe2)3and (NMe2)2Ge(ipr2en) Precursors with Ozone

2015 ◽  
Vol 36 (8) ◽  
pp. 2162-2165
Author(s):  
Jae-Sun Jung ◽  
Dae-Hyun Kim ◽  
Jin-Ho Shin ◽  
Jung-Soo Kang ◽  
Joseph P. Thomas ◽  
...  
Keyword(s):  
Thin Films ◽  
Fabrication And Characterization

Fabrication and Characterization of an Ultrasensitive Humidity Sensor Based on Chalcogenide Glassy Alloy Thin Films

2021 ◽  
Author(s):  
Surabhi Mishra ◽  
◽  
Priyanka Chaudhary ◽  
B. C. Yadav ◽  
Ahmad Umar ◽  
...  
Keyword(s):  
Thin Films ◽  
Humidity Sensor ◽  
Glassy Alloy ◽  
Fabrication And Characterization

Structural and Optical Characterization of Zinc Telluride Thin Films

2013 ◽  
Vol 665 ◽  
pp. 254-262 ◽  
Author(s):  
J.R. Rathod ◽  
Haresh S. Patel ◽  
K.D. Patel ◽  
V.M. Pathak
Keyword(s):  
Thin Films ◽  
Extinction Coefficient ◽  
Nir Spectroscopy ◽  
Optical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Evaporation Technique ◽  
Film Form ◽  
Znte Thin Films

Group II-VI compounds have been investigated largely in last two decades due to their interesting optoelectronic properties. ZnTe, a member of this family, possesses a bandgap around 2.26eV. This material is now a day investigated in thin film form due to its potential towards various viable applications. In this paper, the authors report their investigations on the preparation of ZnTe thin films using vacuum evaporation technique and their structural and optical characterizations. The structural characterization, carried out using an X-ray diffraction (XRD) technique shows that ZnTe used in present case possesses a cubic structure. Using the same data, the micro strain and dislocation density were evaluated and found to be around 1.465×10-3lines-m2and 1.639×1015lines/m2respecctively. The optical characterization carried out in UV-VIS-NIR region reveals the fact that band gap of ZnTe is around 2.2eV in present case. In addition to this, it was observed that the value of bandgap decreases as the thickness of films increases. The direct transitions of the carries are involved in ZnTe. Using the data of UV-VIS-NIR spectroscopy, the transmission coefficient and extinction coefficient were also calculated for ZnTe thin films. Besides, the variation of extinction coefficient with wavelength has also been discussed here.

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