High Performance IGZO TFTs with Modified Etch Stop Structure on Glass Substrates

2014 ◽  
Vol 1633 ◽  
pp. 95-100
Author(s):  
Forough Mahmoudabadi ◽  
Ta-Ko Chuang ◽  
Jerry Ho Kung ◽  
Miltiadis K. Hatalis
Keyword(s):  
Annealing Time ◽  
High Performance ◽  
Channel Length ◽  
Device Performance ◽  
Current Ratio ◽  
Glass Substrates ◽  
Etch Stop ◽  
Current Threshold ◽  
Fabrication And Characterization

ABSTRACTIn this paper, we present fabrication and characterization of RF sputtered a-IGZO TFTs having a modified etch stopper structure with source/drain contact windows on glass wafers. The effect of annealing time and channel length on device performance in terms of mobility, on/off current ratio, average off current, threshold voltage, and sub threshold slope is reported.

Fabrication and characterization of high-performance Mo-doped TiN coatings

Vacuum ◽  
2021 ◽  
pp. 110311
Author(s):  
Shenghao Zhou ◽  
Weichen Zhao ◽  
Yaosha Wu ◽  
Zhaoguo Qiu ◽  
Songsheng Lin ◽  
...  
Keyword(s):  
High Performance ◽  
Tin Coatings ◽  
Fabrication And Characterization
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