14‐4: Late‐News Paper: Large‐Area Optical Fingerprint Sensors for Next Generation Smartphones

2020 ◽  
Vol 51 (1) ◽  
pp. 188-191
Author(s):  
Noémie Ballot
Keyword(s):  
Next Generation ◽  
Large Area ◽  
Late News

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

64.5L: Late-News Paper: A Clock Embedded Differential Signaling (CEDS™) for the Next Generation TFT-LCD Applications

2009 ◽  
Vol 40 (1) ◽  
pp. 975 ◽  
Author(s):  
Hyun-Kyu Jeon ◽  
Yong-Whan Moon ◽  
Jeong-II Seo ◽  
Joon-Ho Na ◽  
Hyung-Seog Oh ◽  
...  
Keyword(s):  
Next Generation ◽  
Differential Signaling ◽  
Late News

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

Abstract Power devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (>1000°C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer1, thereby preventing their applications to compact devices2, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon3). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (<1×10-4 Ωcm2) and high breakdown voltage VBD (~100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

scholarly journals A geomagnetic filter for the Fermi-LAT background

2019 ◽  
Vol 490 (4) ◽  
pp. 5440-5450
Author(s):  
D A Prokhorov ◽  
A Moraghan
Keyword(s):  
Charged Particles ◽  
Discrete Source ◽  
Low Earth Orbit ◽  
Shielding Effect ◽  
Earth Orbit ◽  
Next Generation ◽  
Large Area ◽  
Star Forming ◽  
Γ Rays ◽  
Γ Ray

ABSTRACT One of the unsolved questions in γ-ray astronomy is whether the extragalactic γ-ray background is of the discrete-source origin. To respond to this question, one first needs to reduce the data by differentiating charged particles from γ-rays. This procedure is usually performed on the basis of the detector responses. In this paper, we showed that the geomagnetic shielding effect at GeV energies can, to some extent, be used for this purpose for γ-ray telescopes in a low Earth orbit. We illustrated this method by applying it to the Fermi Large Area Telescope data. To partially decompose the charge-filtered background, we examined the contribution from star-forming galaxies by implying a radio/γ-ray connection in consideration of next-generation radio surveys.

64.5L: Late-News Paper: Large Area Flexible Display of Fiber OLED

2006 ◽  
Vol 37 (1) ◽  
pp. 1870 ◽  
Author(s):  
Kiyoshi Yase ◽  
Kenkichi Suzuki ◽  
Minoru Hiroshima ◽  
Akio Mimura ◽  
Yi Mei Shuu ◽  
...  
Keyword(s):  
Large Area ◽  
Flexible Display ◽  
Late News

RapidNano: Towards 20nm Particle Detection on EUV Mask Blanks

MRS Advances ◽  
2016 ◽  
Vol 1 (31) ◽  
pp. 2225-2236 ◽  
Author(s):  
Jacques van der Donck ◽  
Peter Bussink ◽  
Erik Fritz ◽  
Peter van der Walle
Keyword(s):  
Particle Size ◽  
Signal To Noise Ratio ◽  
Semiconductor Industry ◽  
Optical Design ◽  
Dark Field ◽  
Detection Methods ◽  
Next Generation ◽  
Large Area ◽  
Dark Field Imaging ◽  
20 Nm

ABSTRACTCleanliness is a prerequisite for obtaining economically feasible yield levels in the semiconductor industry. For the next generation of lithographic equipment, EUV lithography, the size of yield-loss inducing particles for the masks will be smaller than 20 nm. Consequently, equipment for handling EUV masks should not add particles larger than 20 nm. Detection methods for 20 nm particles on large area surfaces are needed to qualify the equipment for cleanliness. Detection of 20 nm particles is extremely challenging, not only because of the particle size, but also because of the large surface area and limited available time.In 2002 TNO developed the RapidNano, a platform that is capable of detecting nanoparticles on flat substrates. Over the last decade, the smallest detectable particle size was decreased while the inspection rate was increased. This effort has led to a stable and affordable detection platform that is capable of inspecting the full surface of a mask blank.The core of RapidNano is a dark-field imaging technique. Every substrate type has a typical background characteristic, which strongly affects the size of the smallest detectable particle. The noise level is induced by the speckle generated by the surface roughness of the mask. The signal-to-noise ratio can be improved by illuminating the inspection area from nine different angles. This improvement was first shown on test bench level and then applied in the RapidNano3. The RapidNano3 is capable of detecting 42nm latex sphere equivalents (and larger) on silicon surfaces. RapidNano4, the next generation, will use 193 nm light and the same nine angle illumination mode. Camera sensitivity and available laser power determine the achievable throughput. Therefore, special care was given to the optical design, particularly the optical path. With RapidNano4, TNO will push the detection limit of defects on EUV blanks to below 20nm.

scholarly journals Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2

2017 ◽  
Vol 5 (47) ◽  
pp. 24695-24706 ◽  
Author(s):  
A. Moya ◽  
N. Kemnade ◽  
M. R. Osorio ◽  
A. Cherevan ◽  
D. Granados ◽  
...  
Keyword(s):  
Sustainable Energy ◽  
Multifunctional Materials ◽  
Next Generation ◽  
Large Area ◽  
Energy Applications ◽  
Powerful Strategy

Hybridisation is a powerful strategy towards the synthesis of next generation multifunctional materials for environmental and sustainable energy applications.

Sign in / Sign up

Export Citation Format

Share Document