scholarly journals Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2

2017 ◽  
Vol 5 (47) ◽  
pp. 24695-24706 ◽  
Author(s):  
A. Moya ◽  
N. Kemnade ◽  
M. R. Osorio ◽  
A. Cherevan ◽  
D. Granados ◽  
...  
Keyword(s):  
Sustainable Energy ◽  
Multifunctional Materials ◽  
Next Generation ◽  
Large Area ◽  
Energy Applications ◽  
Powerful Strategy

Hybridisation is a powerful strategy towards the synthesis of next generation multifunctional materials for environmental and sustainable energy applications.

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

Carbon Nanotubes for Sustainable Energy Applications

ChemSusChem ◽  
2011 ◽  
Vol 4 (7) ◽  
pp. 913-925 ◽  
Author(s):  
Gabriele Centi ◽  
Siglinda Perathoner
Keyword(s):  
Carbon Nanotubes ◽  
Sustainable Energy ◽  
Energy Applications

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

Abstract Power devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (>1000°C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer1, thereby preventing their applications to compact devices2, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon3). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (<1×10-4 Ωcm2) and high breakdown voltage VBD (~100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

3D periodic polyimide nano-networks for ultrahigh-rate and sustainable energy storage

2021 ◽  
Author(s):  
Youngjin Ham ◽  
Nathan J. Fritz ◽  
Gayea Hyun ◽  
Young Bum Lee ◽  
Jong Seok Nam ◽  
...  
Keyword(s):  
Energy Storage ◽  
Organic Molecules ◽  
Sustainable Energy ◽  
Next Generation ◽  
Significant Progress ◽  
Redox Active

Organic molecules with redox-active motifs are of great interest for next-generation electrodes for sustainable energy storage. While there has been significant progress in designing redox-active molecules, the practical requirements of...

scholarly journals Nanoengineering Carbon Spheres as Nanoreactors for Sustainable Energy Applications

2019 ◽  
Vol 31 (50) ◽  
pp. 1903886 ◽  
Author(s):  
Hao Tian ◽  
Ji Liang ◽  
Jian Liu
Keyword(s):  
Sustainable Energy ◽  
Carbon Spheres ◽  
Energy Applications

scholarly journals Economic pulse electrodeposition for flexible CuInSe2 solar cells

2020 ◽  
Vol 9 (3) ◽  
Author(s):  
Sreekanth Mandati ◽  
Prashant Misra ◽  
Divya Boosagulla ◽  
Tata Naransinga Rao ◽  
Bulusu V. Sarada
Keyword(s):  
Solar Cells ◽  
Low Cost ◽  
Electrode System ◽  
Pulse Electrodeposition ◽  
Small Scale ◽  
Complexing Agents ◽  
Large Area ◽  
Advanced Technique ◽  
Glass Substrates ◽  
Energy Applications

Abstract Electrodeposition is one of the leading non-vacuum techniques for the fabrication of CuInSe2 (CIS)-based solar cells. In the present work, pulse electrodeposition, an advanced technique, is utilized effectively for CIS absorber preparation devoid of any additives/complexing agents. An economic pulse electrodeposition is employed for the deposition of Cu/In stack followed by selenization to fabricate CIS absorbers on flexible and glass substrates. The approach uses a two-electrode system suitable for large area deposition and utilizes the fundamentals of pulse electrodeposition with appropriate optimization of parameters to obtain smooth Cu/In precursors. The selenized CIS absorbers are of 1 µm thick while possessing copper-poor composition (Cu/In ≈ 0.9) and tetragonal chalcopyrite phase. The fabricated devices have exhibited a power conversion efficiency of 5.2%. The technique can be further improved to obtain low-cost CIS solar cells which are suitable for various small-scale energy applications.

scholarly journals A geomagnetic filter for the Fermi-LAT background

2019 ◽  
Vol 490 (4) ◽  
pp. 5440-5450
Author(s):  
D A Prokhorov ◽  
A Moraghan
Keyword(s):  
Charged Particles ◽  
Discrete Source ◽  
Low Earth Orbit ◽  
Shielding Effect ◽  
Earth Orbit ◽  
Next Generation ◽  
Large Area ◽  
Star Forming ◽  
Γ Rays ◽  
Γ Ray

ABSTRACT One of the unsolved questions in γ-ray astronomy is whether the extragalactic γ-ray background is of the discrete-source origin. To respond to this question, one first needs to reduce the data by differentiating charged particles from γ-rays. This procedure is usually performed on the basis of the detector responses. In this paper, we showed that the geomagnetic shielding effect at GeV energies can, to some extent, be used for this purpose for γ-ray telescopes in a low Earth orbit. We illustrated this method by applying it to the Fermi Large Area Telescope data. To partially decompose the charge-filtered background, we examined the contribution from star-forming galaxies by implying a radio/γ-ray connection in consideration of next-generation radio surveys.

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