12-1: An Advanced LTPS TFT-LCD using Top-Gate Oxide TFT in Pixel

2018 ◽  
Vol 49 (1) ◽  
pp. 117-120 ◽  
Author(s):  
Masahiro Tada ◽  
Kazuhide Mochizuki ◽  
Takanori Tsunashima ◽  
Hitoshi Tanaka ◽  
Tomoyuki Ito ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Oxide Tft

2.1: Invited Paper: 16.9‐Inch Flexible AMOLED Display with High Performance Top Gate Oxide TFT

2021 ◽  
Vol 52 (S2) ◽  
pp. 48-50
Author(s):  
YuanJun Hsu ◽  
Zhenguo Lin ◽  
Yihong Lu ◽  
BaiXiang Han ◽  
Weiran Cao ◽  
...  
Keyword(s):  
High Performance ◽  
Gate Oxide ◽  
Oxide Tft

Novel self-aligned top-gate oxide TFT for AMOLED displays

2012 ◽  
Vol 20 (1) ◽  
pp. 47 ◽  
Author(s):  
Narihiro Morosawa ◽  
Yoshihiro Ohshima ◽  
Mitsuo Morooka ◽  
Toshiaki Arai ◽  
Tatsuya Sasaoka
Keyword(s):  
Gate Oxide ◽  
Oxide Tft

35.3: Distinguished Paper: A Novel Self-Aligned Top-Gate Oxide TFT for AM-OLED Displays

2011 ◽  
Vol 42 (1) ◽  
pp. 479-482 ◽  
Author(s):  
Narihiro Morosawa ◽  
Yoshihiro Ohshima ◽  
Mitsuo Morooka ◽  
Toshiaki Arai ◽  
Tatsuya Sasaoka
Keyword(s):  
Gate Oxide ◽  
Oxide Tft

Room temperature fabrication Oxide TFT with Y2O3 as a gate oxide and Mo contact

2009 ◽  
Vol 255 (17) ◽  
pp. 7831-7833 ◽  
Author(s):  
Santosh M. Bobade ◽  
Ji-Hoon Shin ◽  
Young-Je Cho ◽  
Jung-Sun You ◽  
Duck-Kyun Choi
Keyword(s):  
Room Temperature ◽  
Gate Oxide ◽  
Oxide Tft

High-mobility self-aligned top-gate oxide TFT for high-resolution AM-OLED

2013 ◽  
Vol 21 (11) ◽  
pp. 467-473 ◽  
Author(s):  
Narihiro Morosawa ◽  
Masanori Nishiyama ◽  
Yoshihiro Ohshima ◽  
Ayumu Sato ◽  
Yasuhiro Terai ◽  
...  
Keyword(s):  
High Resolution ◽  
High Mobility ◽  
Gate Oxide ◽  
Oxide Tft

10.1: High Mobility Self-Aligned Top-Gate Oxide TFT for High-Resolution AM-OLED

2013 ◽  
Vol 44 (1) ◽  
pp. 85-88 ◽  
Author(s):  
Narihiro Morosawa ◽  
Masanori Nishiyama ◽  
Yoshihiro Ohshima ◽  
Ayumu Sato ◽  
Yasuhiro Terai ◽  
...  
Keyword(s):  
High Resolution ◽  
High Mobility ◽  
Gate Oxide ◽  
Oxide Tft

Real‐time current‐sensing feedback system for compensating process–voltage–temperature variations of display using double‐gate oxide TFT

2017 ◽  
Vol 53 (2) ◽  
pp. 117-119 ◽  
Author(s):  
Bong‐Hyun You ◽  
Jae‐Hoon Lee ◽  
Soo‐Yeon Lee ◽  
Seok‐Ha Hong ◽  
Hyun‐Chang Kim ◽  
...  
Keyword(s):  
Real Time ◽  
Gate Oxide ◽  
Feedback System ◽  
Double Gate ◽  
Current Sensing ◽  
Temperature Variations ◽  
Oxide Tft

Analysis of Hydrogen Passivation Mechanisms in Poly-Si TFT’s by Employing R.F. Plasma

1995 ◽  
Vol 378 ◽  
Author(s):  
K. Y. Choi ◽  
Y. S. Kim ◽  
H.S. Choi ◽  
B.S. Bae ◽  
M. K. Han
Keyword(s):  
Hydrogen Diffusion ◽  
Gate Oxide ◽  
Channel Length ◽  
State Density ◽  
Hydrogen Atoms ◽  
Tail State ◽  
Oxide Tft ◽  
Hydrogenation Time ◽  
Thin Gate Oxide ◽  
Active Channel

AbstractThe dominant pathways for hydrogen diffusion in poly-Si TFT’s are identified by analyzing the hydrogenation effect on the various device geometries. It is observed that the gate poly-Si thickness and channel width didn’t affect the hydrogenation. As the channel length was decreased down to 3 µm, threshold voltage was reduced and field effect mobility was increased significantly with hydrogeantion time. In the thick gate oxide (2000 Å, 4000 Å) poly-Si TFT’s, the device characteristics have been improved rapidly with hydrogenation time. The tail state density of thin gate oxide TFT wasn’t change by hydrgenation while that of thick gate oxide TFT was significantly reduced. Our experimental results may support the model that hydrogen atoms diffuse into the bulk of the active channel layer through the gate oxide and passivate the grain boundary and intragranular defects limitedly by gate oxide area.

Effect of hydrogen in the gate insulator on the bottom gate oxide TFT

2010 ◽  
Vol 11 (3) ◽  
pp. 113-118 ◽  
Author(s):  
Sang‐Hee Ko Park ◽  
Minki Ryu ◽  
Shinhyuk Yang ◽  
Sung Min Yoon ◽  
Chi‐Sun Hwang
Keyword(s):  
Gate Oxide ◽  
Gate Insulator ◽  
Oxide Tft ◽  
Bottom Gate
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