scholarly journals Composition and stress analysis in Si structures using micro-raman spectroscopy

Scanning ◽  
2006 ◽  
Vol 26 (5) ◽  
pp. 235-239 ◽  
Author(s):  
J. McCarthy ◽  
T. S. Perova ◽  
R. A. Moore ◽  
S. Bhattacharya ◽  
H. Gamble ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Stress Analysis ◽  
Micro Raman Spectroscopy

Stress analysis of Si chip sidewalls using micro-Raman spectroscopy

2020 ◽  
Author(s):  
Martin De Biasio ◽  
Martin Kraft ◽  
Richard Ong ◽  
Christian Seifert ◽  
Manfred Ossiander ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Stress Analysis ◽  
Micro Raman Spectroscopy

T0302-2-2 Local stress analysis of single-crystalline resonator using micro Raman spectroscopy

2010 ◽  
Vol 2010.8 (0) ◽  
pp. 255-256
Author(s):  
Akira TANIYAMA ◽  
Yoshikazu HIRAI ◽  
Koji SUGANO ◽  
Osamu TABATA ◽  
Tsuyoshi IKEHARA ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Stress Analysis ◽  
Local Stress ◽  
Single Crystalline ◽  
Micro Raman Spectroscopy

Stress analysis in melt processed RBa2Cu3O7 (R=Y, Nd) by micro-Raman spectroscopy

1998 ◽  
Vol 6 (2-5) ◽  
pp. 185-192
Author(s):  
R Provoost ◽  
K Rosseel ◽  
D Dierickx ◽  
R.E Silverans ◽  
V.V Moshchalkov ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Stress Analysis ◽  
Micro Raman Spectroscopy

Micro-Raman spectroscopy for stress analysis on large area diamond/Ti6Al4V electrodes

2004 ◽  
Vol 13 (3) ◽  
pp. 526-532 ◽  
Author(s):  
A.V. Diniz ◽  
N.G. Ferreira ◽  
E.J. Corat ◽  
V.J. Trava-Airoldi
Keyword(s):  
Raman Spectroscopy ◽  
Stress Analysis ◽  
Large Area ◽  
Micro Raman Spectroscopy

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

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