Semiclassical derivation of the tunneling probability in magnetic breakdown

2009 ◽  
Vol 9 (S9) ◽  
pp. 477-480
Author(s):  
I. Adawi
Keyword(s):  
Tunneling Probability ◽  
Magnetic Breakdown

Field-assisted ionization theory for microscopists

1994 ◽  
Vol 52 ◽  
pp. 820-821
Author(s):  
Patrick P. Camus
Keyword(s):  
Electric Field ◽  
Electron Tunneling ◽  
Ionization Probability ◽  
Critical Distance ◽  
Tunneling Probability ◽  
Field Ionization ◽  
Radius Of Curvature ◽  
Field Evaporation ◽  
A Value ◽  
Ion Emission

The theory of field ion emission is the study of electron tunneling probability enhanced by the application of a high electric field. At subnanometer distances and kilovolt potentials, the probability of tunneling of electrons increases markedly. Field ionization of gas atoms produce atomic resolution images of the surface of the specimen, while field evaporation of surface atoms sections the specimen. Details of emission theory may be found in monographs.Field ionization (FI) is the phenomena whereby an electric field assists in the ionization of gas atoms via tunneling. The tunneling probability is a maximum at a critical distance above the surface,xc, Fig. 1. Energy is required to ionize the gas atom at xc, I, but at a value reduced by the appliedelectric field, xcFe, while energy is recovered by placing the electron in the specimen, φ. The highest ionization probability occurs for those regions on the specimen that have the highest local electric field. Those atoms which protrude from the average surfacehave the smallest radius of curvature, the highest field and therefore produce the highest ionizationprobability and brightest spots on the imaging screen, Fig. 2. This technique is called field ion microscopy (FIM).

scholarly journals Magnetic Breakdown and Phase-Coherent Galvanomagnetic Effects

1973 ◽  
Vol 8 (2) ◽  
pp. 527-535 ◽  
Author(s):  
C. E. T. Goncalves da Silva ◽  
L. M. Falicov
Keyword(s):  
Magnetic Breakdown ◽  
Galvanomagnetic Effects

THE STUDY OF THE MAGNETIC BREAKDOWN EFFECT AS A FUNCTION OF ANGLE IN THE ORGANIC CONDUCTOR K- (BEDT-TTF)2Cu(NCS)2 IN HIGH MAGNETIC FIELDS

2002 ◽  
Vol 16 (20n22) ◽  
pp. 3355-3359
Author(s):  
I. MIHUT ◽  
C. C. AGOSTA ◽  
C. H. MIELKE ◽  
M. TOKOMOTO
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Spin Splitting ◽  
High Magnetic Fields ◽  
Organic Conductor ◽  
Cross Sectional ◽  
Tank Circuit ◽  
Quantum Oscillations ◽  
Magnetic Breakdown ◽  
Splitting Factor

The magnetic breakdown effect can be seen by the growth of new frequencies in the quantum oscillations in clean metals as a function of magnetic field. We have studied the variation of the amplitudes in the quantum oscillations in the resistance (the Shubnikov-de Haas effect) as a function of angle in the quasi-two dimensional-organic conductor κ-(BEDT-TTF)2Cu(NCS)2. The measurements were made by means of a radio frequency (rf) tank circuit (~ 50 MHz) at very high magnetic fields(50T-60T) and low temperature(500 mK). The geometry of the rf excitation we used excited in-plane currents, and therefore we measured the in-plane resistivity. In contrast to conventional transport measurements that measure the inter-plane resistivity, the in-plane resistivity is dominated by the magnetic breakdown frequencies. As a result we measured much higher breakdown frequency amplitudes than conventional transport experiments. As is expected, the angular dependence of the Shubnikov-de Haas frequencies have a 1/cosθ behavior. This is due to the change of the cross sectional area of the tubular Fermi surface as the angle with respect to the magnetic field is changed. The amplitude of the oscillations changes due to the spin splitting factor which takes into account the ratio between the spin splitting and the energy spacing of the Landau levels which also has 1/cosθ behavior. We show that our data agree with the semi-classical theory (Lifshitz-Kosevich formula).

scholarly journals Tunneling Probability Increases with Distance in Junctions Comprising Self-Assembled Monolayers of Oligothiophenes

2018 ◽  
Vol 140 (44) ◽  
pp. 15048-15055 ◽  
Author(s):  
Yanxi Zhang ◽  
Saurabh Soni ◽  
Theodorus L. Krijger ◽  
Pavlo Gordiichuk ◽  
Xinkai Qiu ◽  
...  
Keyword(s):  
Tunneling Probability ◽  
Self Assembled Monolayers ◽  
Assembled Monolayers ◽  
Self Assembled

Modeling of nitrogen profile effects on direct tunneling probability in ultrathin nitrided oxides

2008 ◽  
Vol 92 (2) ◽  
pp. 022112 ◽  
Author(s):  
Po-Tsun Liu ◽  
Chen-Shuo Huang ◽  
D. Y. Lee ◽  
P. S. Lim ◽  
S. W. Lin ◽  
...  
Keyword(s):  
Tunneling Probability ◽  
Direct Tunneling

Extended Quantum Model for Porous Silicon Formation

1994 ◽  
Vol 358 ◽  
Author(s):  
H. Münder ◽  
St. Frohnhoff ◽  
M.G. Berger ◽  
M. Marso ◽  
M. Thönissen ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Doping Level ◽  
Tunneling Probability ◽  
Quantum Mechanical ◽  
Quantum Model ◽  
Electrochemical Dissolution ◽  
Quantum Mechanical Calculations ◽  
Model Calculations ◽  
Etching Parameters ◽  
Substrate Doping

ABSTRACTThe formation of porous silicon (PS) by electrochemical dissolution of bulk Si is described by a new model involving quantum mechanical calculations of the tunneling probability of holes through small crystallites (< 60 Å) into the electrolyte. This tunneling probability shows oscillations as a function of crystallite size. The presented model calculations are in agreement to the microstructure of p-PS — deduced from Raman measurements — as a function of etching parameters and substrate doping level.

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