Modeling of nitrogen profile effects on direct tunneling probability in ultrathin nitrided oxides

2008 ◽  
Vol 92 (2) ◽  
pp. 022112 ◽  
Author(s):  
Po-Tsun Liu ◽  
Chen-Shuo Huang ◽  
D. Y. Lee ◽  
P. S. Lim ◽  
S. W. Lin ◽  
...  
Keyword(s):  
Tunneling Probability ◽  
Direct Tunneling

Field-assisted ionization theory for microscopists

1994 ◽  
Vol 52 ◽  
pp. 820-821
Author(s):  
Patrick P. Camus
Keyword(s):  
Electric Field ◽  
Electron Tunneling ◽  
Ionization Probability ◽  
Critical Distance ◽  
Tunneling Probability ◽  
Field Ionization ◽  
Radius Of Curvature ◽  
Field Evaporation ◽  
A Value ◽  
Ion Emission

The theory of field ion emission is the study of electron tunneling probability enhanced by the application of a high electric field. At subnanometer distances and kilovolt potentials, the probability of tunneling of electrons increases markedly. Field ionization of gas atoms produce atomic resolution images of the surface of the specimen, while field evaporation of surface atoms sections the specimen. Details of emission theory may be found in monographs.Field ionization (FI) is the phenomena whereby an electric field assists in the ionization of gas atoms via tunneling. The tunneling probability is a maximum at a critical distance above the surface,xc, Fig. 1. Energy is required to ionize the gas atom at xc, I, but at a value reduced by the appliedelectric field, xcFe, while energy is recovered by placing the electron in the specimen, φ. The highest ionization probability occurs for those regions on the specimen that have the highest local electric field. Those atoms which protrude from the average surfacehave the smallest radius of curvature, the highest field and therefore produce the highest ionizationprobability and brightest spots on the imaging screen, Fig. 2. This technique is called field ion microscopy (FIM).

Evidence of hole direct tunneling through ultrathin gate oxide using P/sup +/ poly-SiGe gate

1999 ◽  
Vol 20 (6) ◽  
pp. 268-270 ◽  
Author(s):  
Wen-Chin Lee ◽  
Tsu-Jae King ◽  
Chenming Hu
Keyword(s):  
Gate Oxide ◽  
Direct Tunneling

scholarly journals Tunneling Probability Increases with Distance in Junctions Comprising Self-Assembled Monolayers of Oligothiophenes

2018 ◽  
Vol 140 (44) ◽  
pp. 15048-15055 ◽  
Author(s):  
Yanxi Zhang ◽  
Saurabh Soni ◽  
Theodorus L. Krijger ◽  
Pavlo Gordiichuk ◽  
Xinkai Qiu ◽  
...  
Keyword(s):  
Tunneling Probability ◽  
Self Assembled Monolayers ◽  
Assembled Monolayers ◽  
Self Assembled

Electron transport properties of Si nanosheets: Transition from direct tunneling to Fowler-Nordheim tunneling

2011 ◽  
Vol 99 (2) ◽  
pp. 023107 ◽  
Author(s):  
Takashi Ikuno ◽  
Hirotaka Okamoto ◽  
Yusuke Sugiyama ◽  
Hideyuki Nakano ◽  
Fumihiko Yamada ◽  
...  
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Direct Tunneling ◽  
Electron Transport Properties ◽  
Nordheim Tunneling
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