scholarly journals Electric Fields and Surface Fermi Level in Undoped GaN/AlN Two‐Dimensional Hole Gas Heterostructures

2021 ◽  
Vol 15 (4) ◽  
pp. 2000573
Author(s):  
Łukasz Janicki ◽  
Reet Chaudhuri ◽  
Samuel James Bader ◽  
Huili Grace Xing ◽  
Debdeep Jena ◽  
...  
Keyword(s):  
Fermi Level ◽  
Electric Fields ◽  
Two Dimensional ◽  
Surface Fermi Level

Simulation of Two-Dimensional Nematic Director Structures in Inhomogeneous Electric Fields

1991 ◽  
Vol 198 (1) ◽  
pp. 15-28 ◽  
Author(s):  
Gunther Haas ◽  
Henning Wöhler ◽  
Michael W. Fritsch ◽  
Dieter A. Mlynski
Keyword(s):  
Electric Fields ◽  
Two Dimensional ◽  
Nematic Director

Numerical study of electric field effects on the deformation of two-dimensional liquid drops in simple shear flow at arbitrary Reynolds number

2009 ◽  
Vol 626 ◽  
pp. 367-393 ◽  
Author(s):  
STEFAN MÄHLMANN ◽  
DEMETRIOS T. PAPAGEORGIOU
Keyword(s):  
Steady State ◽  
Shear Flow ◽  
Electric Field ◽  
Electric Fields ◽  
Simple Shear ◽  
Simple Shear Flow ◽  
Physical Parameters ◽  
Shear Stresses ◽  
Two Dimensional ◽  
Liquid Drops

The effect of an electric field on a periodic array of two-dimensional liquid drops suspended in simple shear flow is studied numerically. The shear is produced by moving the parallel walls of the channel containing the fluids at equal speeds but in opposite directions and an electric field is generated by imposing a constant voltage difference across the channel walls. The level set method is adapted to electrohydrodynamics problems that include a background flow in order to compute the effects of permittivity and conductivity differences between the two phases on the dynamics and drop configurations. The electric field introduces additional interfacial stresses at the drop interface and we perform extensive computations to assess the combined effects of electric fields, surface tension and inertia. Our computations for perfect dielectric systems indicate that the electric field increases the drop deformation to generate elongated drops at steady state, and at the same time alters the drop orientation by increasing alignment with the vertical, which is the direction of the underlying electric field. These phenomena are observed for a range of values of Reynolds and capillary numbers. Computations using the leaky dielectric model also indicate that for certain combinations of electric properties the drop can undergo enhanced alignment with the vertical or the horizontal, as compared to perfect dielectric systems. For cases of enhanced elongation and alignment with the vertical, the flow positions the droplets closer to the channel walls where they cause larger wall shear stresses. We also establish that a sufficiently strong electric field can be used to destabilize the flow in the sense that steady-state droplets that can exist in its absence for a set of physical parameters, become increasingly and indefinitely elongated until additional mechanisms can lead to rupture. It is suggested that electric fields can be used to enhance such phenomena.

Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning

2022 ◽  
Author(s):  
Tien Dat Ngo ◽  
Min Sup Choi ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Won Jong Yoo
Keyword(s):  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Two Dimensional ◽  
Edge Contact ◽  
Fermi Level Pinning ◽  
P Type

A technique to form the edge contact in two-dimensional (2D) based field-effect transistors (FETs) has been intensively studied for the purpose of achieving high mobility and also recently overcoming the...

Polarimetric Image Sensor and Fermi Level Shifting Induced Multi‐Channel Transition Based on Two‐dimensional PdPS

2021 ◽  
pp. 2107206
Author(s):  
Xingang Wang ◽  
Tao Xiong ◽  
Kai Zhao ◽  
Ziqi Zhou ◽  
Kaiyao Xin ◽  
...  
Keyword(s):  
Fermi Level ◽  
Image Sensor ◽  
Two Dimensional ◽  
Channel Transition

Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates

2008 ◽  
Vol 93 (4) ◽  
pp. 041913 ◽  
Author(s):  
Houssam Chouaib ◽  
Catherine Bru-Chevallier ◽  
Aleksandra Apostoluk ◽  
Wojciech Rudno-Rudzinski ◽  
Melania Lijadi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Fermi Level ◽  
Molecular Beam ◽  
Inp Substrates ◽  
Surface Fermi Level

scholarly journals Unified mechanism of the surface Fermi level pinning in III-As nanowires

2018 ◽  
Vol 29 (31) ◽  
pp. 314003 ◽  
Author(s):  
Prokhor A Alekseev ◽  
Mikhail S Dunaevskiy ◽  
George E Cirlin ◽  
Rodion R Reznik ◽  
Alexander N Smirnov ◽  
...  
Keyword(s):  
Fermi Level ◽  
Fermi Level Pinning ◽  
Surface Fermi Level

Metal–2D multilayered semiconductor junctions: layer-number dependent Fermi-level pinning

2020 ◽  
Vol 8 (9) ◽  
pp. 3113-3119 ◽  
Author(s):  
Qian Wang ◽  
Yangfan Shao ◽  
Penglai Gong ◽  
Xingqiang Shi
Keyword(s):  
Fermi Level ◽  
Thickness Dependence ◽  
Available P ◽  
Two Dimensional ◽  
Layer Number ◽  
Fermi Level Pinning

Thickness-dependent performance of metal–two-dimensional semiconductor junctions in electronics/optoelectronics have attracted increasing attention but, currently, little knowledge about the micro-mechanism of this thickness dependence is available.

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