Polarity control and residual strain in ZnO epilayers grown by molecular beam epitaxy on (0001) GaN/sapphire

2016 ◽  
Vol 10 (9) ◽  
pp. 682-686 ◽  
Author(s):  
Md. Barkat Ullah ◽  
Vitaliy Avrutin ◽  
Si Qian Li ◽  
Saikat Das ◽  
Morteza Monavarian ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Residual Strain ◽  
Molecular Beam

Optical and structural prorerties of InAs epilayer on graded InGaAs

2001 ◽  
Vol 696 ◽  
Author(s):  
Gu Hyun Kim ◽  
Jung Bum Choi ◽  
Joo In Lee ◽  
Se-Kyung Kang ◽  
Seung Il Ban ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Residual Strain ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Peak Position ◽  
Excitation Intensity ◽  
Total Thickness ◽  
Ingaas Layer ◽  
X Ray Diffraction ◽  
X Ray

AbstractWe have studied infrared photoluminescence (PL) and x-ray diffraction (XRD) of 400 nm and 1500 nm thick InAs epilayers on GaAs, and 4 nm thick InAs on graded InGaAs layer with total thickness of 300 nm grown by molecular beam epitaxy. The PL peak positions of 400 nm, 1500 nm and 4 nm InAs epilayer measured at 10 K are blue-shifted from that of InAs bulk by 6.5, 4.5, and 6 meV, respectively, which can be largely explained by the residual strain in the epilayer. The residual strain caused by the lattice mismatch between InAs and GaAs or graded InGaAs/GaAs was observed from XRD measurements. While the PL peak position of 400 nm thick InAs layer is linearly shifted toward higher energy with increase in excitation intensity ranging from 10 to 140 mW, those of 4 nm InAs epilayer on InGaAs and 1500 nm InAs layer on GaAs is gradually blue-shifted and then, saturated above a power of 75 mW. These results suggest that adopting a graded InGaAs layer between InAs and GaAs can efficiently reduce the strain due to lattice mismatch in the structure of InAs/GaAs.

Growth of Strain-Free GaAs on Si/Sapphire

1993 ◽  
Vol 308 ◽  
Author(s):  
Hyunchul Sohn ◽  
E.R. Weber ◽  
Jay Tu ◽  
J.S. Smith
Keyword(s):  
Molecular Beam Epitaxy ◽  
Residual Strain ◽  
Molecular Beam ◽  
Thermal Strain ◽  
Misfit Strain ◽  
Gaas Layer ◽  
Buffer Layers ◽  
Sapphire Substrates ◽  
Gaas On Si ◽  
Gaas Films

ABSTRACTGaAs epitaxial layers were successfully grown on Si/Sapphire substrates using Molecular Beam Epitaxy(MBE). Residual compressive strain was found in GaAs films on Si/Sapphire. By Photoluminescence, the magnitude of residual strain in GaAs on Si/Sapphire was estimated to be 5×10-4 which is about one order smaller than that of GaAs on Si.As an effort to achieve further reduction in the residual strain, Indium- doped GaAs films were used as buffer layers in order to compensate compressive thermal strain by tensile misfit strain in the GaAs layer. Using this method, strain- free GaAs layers could be grown with thickness up to 0.4 μm on Si/Sapphire.

Residual strain and surface roughness of Si 1−x Ge x alloy layers grown by molecular beam epitaxy on Si(001) substrate

2000 ◽  
Vol 369 (1-2) ◽  
pp. 161-166 ◽  
Author(s):  
C Tatsuyama ◽  
T Asano ◽  
T Nakao ◽  
H Matada ◽  
T Tambo ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Molecular Beam Epitaxy ◽  
Residual Strain ◽  
Molecular Beam

ZnSe Growth on Lattice-Matched InxGa1-xAs Substrates

1998 ◽  
Vol 05 (03n04) ◽  
pp. 693-700 ◽  
Author(s):  
S. Heun ◽  
R. Lantier ◽  
J. J. Paggel ◽  
L. Sorba ◽  
S. Rubini ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Residual Strain ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Line Emission ◽  
Transmission Electron ◽  
Lattice Matched

The properties of ZnSe epilayers fabricated by molecular beam epitaxy on lattice-matched In x Ga 1-x As buffers grown on GaAs(001) substrates have been investigated by means of photoluminescence spectroscopy and transmission electron microscopy. For suitable values of x and ternary-layer thickness, the partial character of the strain relaxation within the III–V layer can be compensated for, minimizing the residual strain in the ZnSe overlayer. Large reductions in the dislocation density and Y-line emission as compared to conventional ZnSe/GaAs heterostructures can be reproducibly obtained.

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

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