Residual strain in a zinc blende Mn/sub 1-x/Mg/sub x/Te layers grown by molecular beam epitaxy

2002 ◽  
Author(s):  
E. Dynowska ◽  
J. Bak-Misiuk ◽  
E. Janik ◽  
J. Trela ◽  
T. wojtowicz
Keyword(s):  
Molecular Beam Epitaxy ◽  
Residual Strain ◽  
Molecular Beam ◽  
Zinc Blende

Optical and structural prorerties of InAs epilayer on graded InGaAs

2001 ◽  
Vol 696 ◽  
Author(s):  
Gu Hyun Kim ◽  
Jung Bum Choi ◽  
Joo In Lee ◽  
Se-Kyung Kang ◽  
Seung Il Ban ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Residual Strain ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Peak Position ◽  
Excitation Intensity ◽  
Total Thickness ◽  
Ingaas Layer ◽  
X Ray Diffraction ◽  
X Ray

AbstractWe have studied infrared photoluminescence (PL) and x-ray diffraction (XRD) of 400 nm and 1500 nm thick InAs epilayers on GaAs, and 4 nm thick InAs on graded InGaAs layer with total thickness of 300 nm grown by molecular beam epitaxy. The PL peak positions of 400 nm, 1500 nm and 4 nm InAs epilayer measured at 10 K are blue-shifted from that of InAs bulk by 6.5, 4.5, and 6 meV, respectively, which can be largely explained by the residual strain in the epilayer. The residual strain caused by the lattice mismatch between InAs and GaAs or graded InGaAs/GaAs was observed from XRD measurements. While the PL peak position of 400 nm thick InAs layer is linearly shifted toward higher energy with increase in excitation intensity ranging from 10 to 140 mW, those of 4 nm InAs epilayer on InGaAs and 1500 nm InAs layer on GaAs is gradually blue-shifted and then, saturated above a power of 75 mW. These results suggest that adopting a graded InGaAs layer between InAs and GaAs can efficiently reduce the strain due to lattice mismatch in the structure of InAs/GaAs.

scholarly journals Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy

2014 ◽  
Vol 403 ◽  
pp. 43-47 ◽  
Author(s):  
S.V. Novikov ◽  
R.E. L. Powell ◽  
C.R. Staddon ◽  
A.J. Kent ◽  
C.T. Foxon
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Free Standing ◽  
Zinc Blende

Materials Design and Molecular-Beam Epitaxy of Half-Metallic Zinc-Blende CrAs and the Heterostructures

2005 ◽  
pp. 293-311
Author(s):  
Hiro Akinaga ◽  
Masaki Mizuguchi ◽  
Kazutaka Nagao ◽  
Yoshio Miura ◽  
Masafumi Shirai
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Materials Design ◽  
Metallic Zinc ◽  
Half Metallic ◽  
Zinc Blende

Self-assembled zinc blende GaN quantum dots grown by molecular-beam epitaxy

2000 ◽  
Vol 77 (6) ◽  
pp. 809-811 ◽  
Author(s):  
E. Martinez-Guerrero ◽  
C. Adelmann ◽  
F. Chabuel ◽  
J. Simon ◽  
N. T. Pelekanos ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zinc Blende ◽  
Self Assembled

scholarly journals Zinc-blende and wurtzite AlxGa1−xN bulk crystals grown by molecular beam epitaxy

2012 ◽  
Vol 350 (1) ◽  
pp. 80-84 ◽  
Author(s):  
S.V. Novikov ◽  
C.R. Staddon ◽  
F. Luckert ◽  
P.R. Edwards ◽  
R.W. Martin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Bulk Crystals ◽  
Zinc Blende

Zinc-blende (cubic) GaN bulk crystals grown by molecular beam epitaxy

2011 ◽  
Vol 8 (5) ◽  
pp. 1439-1444 ◽  
Author(s):  
S. V. Novikov ◽  
C. T. Foxon ◽  
A. J. Kent
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Bulk Crystals ◽  
Zinc Blende ◽  
Cubic Gan

Growth of zinc blende MgS/ZnSe single quantum wells by molecular-beam epitaxy using ZnS as a sulphur source

2000 ◽  
Vol 76 (26) ◽  
pp. 3929-3931 ◽  
Author(s):  
C. Bradford ◽  
C. B. O’Donnell ◽  
B. Urbaszek ◽  
A. Balocchi ◽  
C. Morhain ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Single Quantum ◽  
Sulphur Source ◽  
Zinc Blende
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