Excellent passivation of thin silicon wafers by HF-free hydrogen plasma etching using an industrial ICPECVD tool

2014 ◽  
Vol 9 (1) ◽  
pp. 47-52 ◽  
Author(s):  
Muzhi Tang ◽  
Jia Ge ◽  
Johnson Wong ◽  
Zhi Peng Ling ◽  
Torsten Dippell ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Hydrogen Plasma ◽  
Silicon Wafers ◽  
Free Hydrogen ◽  
Thin Silicon

A Chemical Perspective of GaN Polarity: The use of Hydrogen Plasma Dry Etching Versus NaOH Wet Etching to Determine Polarity

2002 ◽  
Vol 722 ◽  
Author(s):  
Maria Losurdo ◽  
MariaMichela Giangregorio ◽  
Pio Capezzuto ◽  
Giovanni Bruno ◽  
Gon Namkoong ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Plasma Etching ◽  
Hydrogen Plasma ◽  
Dry Etching ◽  
Surface Reactivity ◽  
Wet Etching ◽  
Hydrogen Treatment

AbstractThe use of dry hydrogen plasma etching is evaluated for determination of GaN polarity and critically compared to wet etching in NaOH. It is shown that hydrogen plasma etching is effective in revealing inversion domains (IDs) and some types of dislocations. This is because the surface morphology is unchanged by the hydrogen treatment, and, hence, the surface reactivity is not masked.

Dry Cleaning of Silicon Wafers in a Low Energy Hydrogen Plasma

1993 ◽  
Vol 32-33 ◽  
pp. 111-116 ◽  
Author(s):  
J. Ramm ◽  
E. Beck ◽  
Alex Dommann ◽  
Ignaz Eisele ◽  
D. Krüger ◽  
...  
Keyword(s):  
Hydrogen Plasma ◽  
Silicon Wafers ◽  
Low Energy ◽  
Dry Cleaning

Hydrogen-plasma etching of ion beam deposited c-BN films: An in situ investigation of the surface with electron spectroscopy

2000 ◽  
Vol 88 (10) ◽  
pp. 5597-5604 ◽  
Author(s):  
P. Reinke ◽  
P. Oelhafen ◽  
H. Feldermann ◽  
C. Ronning ◽  
H. Hofsäss
Keyword(s):  
Plasma Etching ◽  
Electron Spectroscopy ◽  
Ion Beam ◽  
Hydrogen Plasma ◽  
In Situ Investigation

Hydrogen plasma etching mechanism at the a-C:H/a-SiCx:H interface: A key factor for a-C:H adhesion

2018 ◽  
Vol 455 ◽  
pp. 1179-1184 ◽  
Author(s):  
Leonardo M. Leidens ◽  
Ângela E. Crespi ◽  
Carla D. Boeira ◽  
Fernando G. Echeverrigaray ◽  
Carlos A. Figueroa
Keyword(s):  
Plasma Etching ◽  
Hydrogen Plasma ◽  
Etching Mechanism ◽  
Key Factor

Backside Thinning and Stress-Relief Techniques for Thin Silicon Wafers

2014 ◽  
pp. 207-226
Author(s):  
Christof Landesberger ◽  
Christoph Paschke ◽  
Hans-Peter Spöhrle ◽  
Karlheinz Bock
Keyword(s):  
Stress Relief ◽  
Silicon Wafers ◽  
Thin Silicon

Analysis of Silicon Micromachining by UV Lasers, and Implications for Full Cut Laser Dicing of Ultra-Thin Semiconductor Device Wafers

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001743-001759
Author(s):  
Andy Hooper ◽  
Daragh Finn
Keyword(s):  
Cross Sections ◽  
Laser Scanning ◽  
Semiconductor Device ◽  
Laser Pulses ◽  
Silicon Wafers ◽  
Silicon Devices ◽  
Laser Fluences ◽  
Slow Velocity ◽  
3D Packaging ◽  
Thin Silicon

3D packaging technologies such as FLASH rely on die-to-die stacking of ultra-thin silicon devices with individual die thicknesses below 100 um. Because ultra-thin silicon wafers are very fragile, mechanical saw dicing of sub 100 um thick wafers tends to be more challenging, requiring slower processing and reduced throughput and/or yields. These challenges make full cut laser dicing an attractive solution. This presentation provides an investigation for machining of 50 um thick silicon wafers using a Gaussian-shaped, nanosecond pulsewidth, 355 nm UV laser. A range of machining speeds and laser fluences are compared, from single laser pulses to highly overlapped slow-velocity machining. 3D Laser Scanning Microscope and FIB/TEM cross sections are employed to characterize the state and depth of heating damage into the Si material. Implications for laser machining rates and die break strength are investigated for full cut laser dicing.

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