Surface passivation of crystalline silicon by sputter deposited hydrogenated amorphous silicon

2013 ◽  
Vol 8 (3) ◽  
pp. 231-234 ◽  
Author(s):  
Xinyu Zhang ◽  
Stuart Hargreaves ◽  
Yimao Wan ◽  
Andres Cuevas
Keyword(s):  
Amorphous Silicon ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Sputter Deposited ◽  
Hydrogenated Amorphous

scholarly journals High quality crystalline silicon surface passivation by combined intrinsic and n-type hydrogenated amorphous silicon

2011 ◽  
Vol 99 (20) ◽  
pp. 203503 ◽  
Author(s):  
Jan-Willem A. Schüttauf ◽  
Karine H. M. van der Werf ◽  
Inge M. Kielen ◽  
Wilfried G. J. H. M. van Sark ◽  
Jatindra K. Rath ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
High Quality ◽  
Hydrogenated Amorphous ◽  
Silicon Surface Passivation

Crystalline Silicon Surface Passivation by Pecv-Deposited Hydrogenated Amorphous Silicon Oxide Films [a-SiOx:H]

2007 ◽  
Vol 989 ◽  
Author(s):  
Thomas Mueller ◽  
Wolfgang Duengen ◽  
Reinhart Job ◽  
Maximilian Scherff ◽  
Wolfgang Fahrner
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Window Layer ◽  
Effective Lifetime ◽  
Si Solar Cells ◽  
Hydrogenated Amorphous

AbstractIn the research field of crystalline silicon (c-Si) solar cells, electronic surface passivation has been recognized as a crucial step to achieve high conversion efficiencies. The main issue of this article is to analyze the surface passivation properties of both, n-type and p-type crystalline silicon wafers by hydrogenated amorphous silicon sub oxide [a-SiOx:H] films the for use in hetero-junction (a-Si/c-Si) solar cells. A window layer is obtained with a certain fraction of oxygen in the a-SiOx:H layers.The a-SiOx:H films were deposited by decomposition of silane, carbon dioxide and hydrogen as source gases using plasma enhanced chemical vapor deposition (PECVD). Films with varying deposition parameters such as gas flow ratio (oxygen fraction) and plasma frequency (13.56, 70.0 and 110.0 MHz) are compared.To determine the passivation quality of the a-SiOx:H films, microwave-detected photo conductance decay (µ-PCD) provides a contactless measurement of the effective recombination lifetime of free carriers. The film compositions and also the changes in the microscopic structure of the amorphous network upon thermal annealing are studied using Raman spectroscopy and optical profiling techniques.The Raman spectra reveal the generation of Si-(OH)x and Si-O-Si bonds after thermal annealing in the layers, leading to a higher effective lifetime, as it reduces the defect absorption of the sub oxides.For n-type FZ material, lifetime values as high as 1650 µs are obtained, resulting in a surface recombination velocity Seff < 9.5 cm/s.

Large-grain poly-crystalline silicon thin films prepared by aluminum-induced crystallization of sputter-deposited hydrogenated amorphous silicon

2006 ◽  
Vol 21 (3) ◽  
pp. 761-766 ◽  
Author(s):  
Maruf Hossain ◽  
Harry M. Meyer ◽  
Husam H. Abu-Safe ◽  
Hameed Naseem ◽  
W.D. Brown
Keyword(s):  
Amorphous Silicon ◽  
Crystallization Process ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
Diffraction Patterns ◽  
Sputter Deposited ◽  
Hydrogenated Amorphous ◽  
Induced Crystallization

A metal-induced crystallization (MIC) technique was used to produce large-grain poly-crystalline silicon. Two sets of samples were prepared by first sputtering Al onto glass substrates. For one set of samples, hydrogenated amorphous silicon (a-Si:H) was sputtered on top of the Al without breaking the vacuum. For the second set, the samples were taken out of the vacuum chamber and exposed to the atmosphere to grow a very thin layer of native aluminum oxide before sputter depositing the a-Si:H. Both sets of samples were then annealed at temperatures between 400 and 525 °C for 40 min. X-ray diffraction patterns confirmed the crystallization of the samples. Scanning Auger microanalysis was used to confirm that the a-Si:H and Al layers exchanged positions in this structure during the crystallization process. Auger mapping revealed the formation of large grain poly-silicon (10–20 μm). A model is proposed to explain how the crystallization process progresses with anneal temperature.

Improved Light Soaking Stability of R.F. Sputter Deposited Amorphous Silicon

1991 ◽  
Vol 219 ◽  
Author(s):  
A. Wynveen ◽  
J. Fan ◽  
J. Kakalios ◽  
J. Shinar
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Content ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Initial Defect ◽  
Optical Gap ◽  
Sputter Deposited ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous

ABSTRACTStudies of r.f. sputter deposited hydrogenated amorphous silicon (a-Si:H) find that the light induced decrease in the dark conductivity and photoconductivity (the Staebler-Wronski effect) is reduced when the r.f. power used during deposition is increased. The slower Staebler-Wronski effect is not due to an increase in the initial defect density in the high r.f. power samples, but may result from either the lower hydrogen content or the smaller optical gap found in these films.

Hall-Effect and Sign Properties in Hydrogenated Amorphous and Disordered Crystalline Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
C. E. Nebel ◽  
M. Rother ◽  
C. Summonte ◽  
M. Heintze ◽  
M. Stutzmann
Keyword(s):  
Hall Effect ◽  
Amorphous Silicon ◽  
Volume Fraction ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Small Volume Fraction ◽  
Phosphorus Doped ◽  
Hydrogenated Amorphous ◽  
Defect Densities ◽  
Very High

AbstractHall experiments on a series of microcrystalline, microcrystalline-amorphous, amorphous and crystalline silicon samples with varying defect densities are presented and discussed. Normal Hall effect signatures on boron and phosphorus doped hydrogenated amorphous silicon are detected. We interpret these results to be due to a small volume fraction of nanocrystalline Si, which falls below the detection limits of Raman experiments. Hydrogenated amorphous silicon, prepared under conditions far away from microcrystalline growth, shows the known double sign anomaly, Sign reversals in c-Si, where the disorder is increased by Si implantation up to very high levels, could not be detected.

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